• Title/Summary/Keyword: Porous Thin Film

Search Result 201, Processing Time 0.025 seconds

New Mechanism of Thin Film Growth by Charged Clusters

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1999.06a
    • /
    • pp.115-127
    • /
    • 1999
  • The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.

  • PDF

Silver Immobilization on Honeycomb-patterned Polyvinypyrrolidone thin Films via an Electroless Process

  • Kim, Bong-Seong;Kim, Won-Jung;Kim, Young-Do;Huh, Do-Sung
    • Bulletin of the Korean Chemical Society
    • /
    • v.32 no.12
    • /
    • pp.4221-4226
    • /
    • 2011
  • Honeycomb-patterned polyvinypyrrolidone (PVP) thin films coated with nanometer-sized silver particles were prepared using honeycomb-patterned polystyrene (PS) template films fabricated by casting a polystyrene solution under humid condition. Silver was first metallized on the patterned PS films via silver nitrate ($AgNO_3$) reduction using tetrathiafulvalene (TTF) and a small amount of PVP as the reductant and dispersing agent, respectively. The effects of $AgNO_3$, TTF, and PVP solution concentrations during the reduction process in acetonitrile were determined to obtain a uniform silver-coated honeycomb-patterned PS film. Second, the silver-metallized patterned porous PS films were filled with high PVP concentration solutions via the spincoating process. Silver-coated patterned PVP films were obtained by peeling off the PVP layer from the template PS film after drying. The results show that the honeycomb-patterned PVP films uniformly coated with silver particles are conveniently obtained using the silver-coated patterned PS template, although the direct fabrication of these films using water droplets under humid conditions was not feasible because of the water solubility of PVP.

New mechanism of thin film growth by charged clusters

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.9 no.3
    • /
    • pp.289-294
    • /
    • 1999
  • The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

  • PDF

Observation of Diverse Aluminum Oxide Structures in a Phosphoric Acid Solution according to the Applied Anodization Voltage (인산용액에서 양극산화 인가전압에 따른 알루미늄 산화피막 성장 관찰)

  • Jeong, Chanyoung
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.26 no.1
    • /
    • pp.35-39
    • /
    • 2019
  • To date, porous alumina structures have been implemented by electrochemical anodization technique. The anodizing methods can easy to make a porous aluminum oxide film with a regular arrangement, but oxide film with complex structure type such as pillar-on-pore is relatively difficult to implement. Therefore, this study aims to observe the change of anodized oxide pore size, thickness, and structure in a phosphoric acid solution according to applied anodization voltage conditions. For the implementation of hybrid composite oxide structures, it is possible to create by modulating anodization voltage. The experimental conditions were performed at the applied anodization voltage of 100 V and 120 V in 10% phosphoric acid solution, respectively. The experimental results were able to observe the structure of oxides in the form of porous and composite structures (pillar-on-pore), depending on each condition.

Preparation of $CeO_2$ Based Solid Electrolyte Thin Films by Electrochemical Vapor Deposition (전기화학증착법에 의한 $CeO_2$계 고체전해질 박막의 제조)

  • 박동원;김대룡
    • Journal of the Korean Ceramic Society
    • /
    • v.34 no.10
    • /
    • pp.1067-1073
    • /
    • 1997
  • The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.

  • PDF

A Study on the Development of Thin Film Type Humidity Sensor Materials by Sol-Gel Method(II) (졸겔법에 의한 박막형 습도센서 소제개발에 관한 연구(II))

  • You, D.H.;Kang, D.H.;Na, D.K.;Hwang, M.W.;Yuk, J.H.;Lee, D.C.
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1472-1474
    • /
    • 1994
  • In this paper, $TiO_2-V_2O_5$ thin films are fabricated by Sol-Gel method and their humidity-sensing characteristics have been investigated. The microstructure of specimen is porous. The humidity-sensing characteristics of thin films are good according to increasing heat treatment temperature and decreasing measurement frequency.

  • PDF

Effect of the multilayer structure on electrical and mechanical properties fo thin film yttria stabilized zirconia electrolyte

  • Jung, In-Ho;Lee, You-Kee;Park, Jong-Wan
    • Journal of Korean Vacuum Science & Technology
    • /
    • v.2 no.1
    • /
    • pp.43-48
    • /
    • 1998
  • The effect of mcirostructure on the electrical properties of yttria stabilized zirconia (YSZ) was analyzed by modeling layer arrangements and mixed phase structure. The YSZ thin films were deposited by RF magnetron sputtering using 30mol% YSZ and 8 mol% YSZ targets with yttrium pellets on porous alumina substrates. The structure, composition and electricla properties of the YSZ films were investigated as functions of sputtering conditons and layer arrangements by XRD, TEM, XPS and acimpedance spectroscopy. The results showed that the triple palyered YSZ films had highermicrohardness, lower compressive stress state and higher ionic conductivity by one order than single and double layered YSZ films. However, sputtered YSZ films have low conductivity compared to YSZ pellets or doctor bladed YSZ thin plates. These results were probably due to the influence of insulating alumina substrates, impractical for most stacking geometries and inductance induced by relatively long platinum, lead wire on YSZ conductivity.

A Study of the Dielectric Characteristics of the Low-k SiOCH Thin Films by Ellipsometry (Ellipsometry를 이용한 Low-k SiOCH 박막의 유전특성에 관한 연구)

  • Yi, In-Hwan;Hwang, Chang-Su;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.12
    • /
    • pp.1083-1089
    • /
    • 2008
  • We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

Photoconductive Property and Its Application of $Sb_2S_3$ Thin film ($Sb_2S_3$ 박막의 광도전특성 및 그 응용)

  • Yun, Young Hoon;Park, Ki Cheol;Choi, Gyu Man;Kim, Ki Wan
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.23 no.5
    • /
    • pp.699-705
    • /
    • 1986
  • Sb2S3 thin films were fabricated by vacuum evaporation of compound Sb2S3 at a pressure of 10**-5 torr. and in argon ambient. Then, their electrical and photoconductive properties were investigated. The Sb2S3 glass-layer showed maximum photosensitivity at the deposition rate of 250\ulcornersec, and Sb2S3 porous layer had mininum dielectric constant of 1.5 at the deposition rate of 0.3 um/sec and argon partial pressure of 0.2torr. Sb2S3 multi-layers were prepared at the different thickness ratio (B/A) to find the proper structural property suited for camera pick-up tube. Here, A is the sum of the thickness of Sb2S3 porous layer and Sb2S3 fine grain layer, and B is the thickness of Sb2S3 fine grain layer. As a result, photosensitivity had a peak value at the thickness ratio (B/A) of 60%.

  • PDF

Fabrication of Solid Oxide Fuel Cells with Electron Beam Physical Vapor Deposition: I. Preparation of Thin Electrolyte Film of YSZ (전자빔 물리증착을 이용한 고체 산화물 연료전지의 제조 : I. YSZ 박막 전해질의 제조)

  • Kim, Hyoungchul;Koo, Myeong-Seo;Park, Jong-Ku;Jung, Hwa-Young;Kim, Joosun;Lee, Hae-Weon;Lee, Jong-Ho
    • Journal of the Korean Ceramic Society
    • /
    • v.43 no.2 s.285
    • /
    • pp.85-91
    • /
    • 2006
  • Electron Beam Physical Vapor Deposition (EB-PVD) was applied to fabricate a thin film YSZ electrolyte with large area on the porous NiO-YSZ anode substrate. Microstructural and thermal stability of the as-deposited electrolyte film was investigated via SEM and XRD analysis. In order to obtain an optimized YSZ film with high stability, both temperature and surface roughness of substrate were varied. A structurally homogeneous YSZ film with large area of $12\times12\;cm^2$ and high thermal stability up to $900^{\circ}C$ was fabricated at the substrate temperature of $T_s/T_m$ higher than 0.4. The smoother surface was proved to give the better film quality. Precise control of heating and cooling rate of the anode substrate was necessary to obtain a very dense YSZ electrolyte with high thermal stability, which affords to survive after post heat treatment for fabrication a cathode layer on it as well as after long time operation of solid oxide fuel cell at high temperature.