• 마이크로전자및패키징학회지
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• 제17권1호
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• pp.41-46
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• 2010

스크린 프린팅된 Ag 박막과 에폭시 수지로 코팅된 폴리이미드 사이의 계면접착력을 $180^{\circ}$ 필 테스트를 통해 정량적으로 구하였다. 스크린 프린팅된 Ag 박막과 에폭시 수지 코팅된 폴리이미드 사이 필 강도는 $164.0{\pm}24.4J/m^2$이었다. 오븐에서 $120^{\circ}C$ 조건에서 24시간 동안 열처리 한 Ag/폴리이미드의 필 강도는 $220.8{\pm}19.2J/m^2$로 증가하였고, $85^{\circ}C/85%$ 상대습도 조건에서 120시간 동안 유지한 Ag/폴리이미드의 필 강도는 $84.1{\pm}50.8J/m^2$로 감소하였다. 전계방출형 주사전자현미경과 XPS를 통해 박리된 시편 표면을 분석한 결과, 열처리 및 고온/다습조건처리 시 스크린 프린팅 Ag 박막과 에폭시 수지 코팅층 사이의 계면접착력은 에폭시 수지와 수분 사이의 가수분해 결합 반응으로 인해 계면접착력 증가 및 감소하는 경향과 밀접한 연관성이 있는 것으로 판단된다.

• Current Optics and Photonics
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• 제3권1호
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• pp.66-71
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• 2019

Application of liquid crystal (LC) materials to a flexible device is challenging because the bending of LC displays easily causes change in thickness of the LC layer and orientation of LCs, resulting in deterioration in a displayed image quality. In this work, we demonstrate a prototype device combining a flexible polymer substrate and an optically isotropic LC-polymer composite in which the device consists of interdigitated in-plane switching electrodes deposited on a flexible colorless polyimide substrate and the composite consisting of nano-sized LC droplets in a polymer matrix. The device can keep good electro-optic characteristics even when it is in a bending state because the LC orientation is not disturbed in both voltage-off and -on states. The proposed device shows a high potential to be applicable for future flexible LC devices.

• Korean Chemical Engineering Research
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• 제59권4호
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• pp.639-643
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• 2021

본 연구에서는 3차원 다층 미세유체 디바이스를 제작하기 위한 접착제로서 불소화 에틸렌 프로필렌(fluorinated ethylene propylene, FEP) 나노입자를 연구하였다. FEP 분산 용액을 1500 rpm에서 30초 동안 단순 스핀 코팅하여 기판에 3 ㎛ 두께의 균일하게 분포된 FEP 나노 입자 층을 형성하였다. FEP 나노입자는 300 ℃에서 1시간 동안 열처리 후 소수성 박막으로 변형되었으며, FEP 나노입자를 이용하여 제작된 폴리이미드 필름 기반 미세유체 디바이스는 최대 2250 psi의 압력을 견디는 것을 확인하였다. 마지막으로 기존의 포토리소그래피로 제작하기 어려운 16개의 마이크로 반응기로 구성된 3차원 다층 미세유체 디바이스를 FEP가 코팅된 9개의 폴리이미드 필름을 간단한 1단계 정렬로 성공적으로 구현하였다. 개발된 3차원 다층 미세유체 디바이스는 화학 및 생물학의 다양한 응용을 위한 고속대량 스크리닝, 대량 생산, 병렬화 및 대규모 미세유체 통합과 같은 강력한 도구가 될 가능성이 있습니다.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.49-54
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• 2021

The display industry is transitioning from traditional rigid products such as flat panel displays to flexible or wearable ones designed to be folded or rolled. Accordingly, colorless and optically transparent polyimide (CPI) films are one of the prime candidates to substitute traditional cover glass as a passivation layer to accommodate product flexibility. However, CPI films subjected to repetitive pure bending loads inevitably entail an accumulation of residual strain that can eventually cause wrinkles or delamination in the underlying component after a certain number of static and cyclic loading. The purpose of this study is to establish an experimental method to systematically evaluate the bending residual strain of CPI films. Films were monotonically and cyclically wrapped on mandrels of various diameters to ensure a constant strain in each. After unwrapping the wound CPI film, the residual radius of curvature remaining on the film was measured and converted into residual strain. The critical radius of curvature at which residual strain does not remain was about 5 mm, and the residual strain decreased in proportion to the log time. It is expected that flexible displays can be reliably designed using the data between the applied bending strain and the residual strain.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.661-664
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• 2004

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

• 한국재료학회지
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• 제28권4호
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.5-9
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• 2003

The liquid crystal (LC) aligning capabilities by the washing processes after rubbing on the two kinds of the rubbed polyimide (Pl) surface were studied. The polar anchoring energy of 4-n-pentyl-4'-cyanobiphenyl (5CB) increased with the rubbing strength RS on the two kinds of the rubbed PI surface. The polar anchoring energy of 5CB on the rubbed PI surface with alkyl side chains is larger than the rubbed PI surface with CONH moiety. Also, the surface ordering of 5CB on the rubbed PI surface with alkyl side chains is larger than the rubbed PI surface with CONH moiety. Therefore, the surface ordering of 5CB strongly depends on the polymers and washing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• 대한전자공학회논문지SD
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• 제40권7호
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• pp.481-485
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• 2003

25㎛ 두께의 폴리이미드 박핀 기판을 glass 기판에 부착하여 최대 온도 150℃에서 비정질 실리콘 TFT를 제작하였다. 본 논문은 plastic 기판 위에 TFT가 제작되는 공정 절차를 요약하고 glass 위에 제작된 TFT와 ON/OFF 전달특성과 전계효과 이동도를 서로 비교해 보았다. a-SiN:H 코팅층은 plastic 기판의 표면 거칠기를 감소시키는 중요한 역할을 하여 TFT의 누설전류를 감소시키고 전계효과 이동도를 증가시켰다. 따라서 a-SiN:H 코팅층을 이용하여 plastic 기판에 양철의 TFT를 제작하였다.