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Fabrication of thin Film Transistor on Plastic Substrate for Application to Flexible Display  

배성찬 (경북대학교 전자·전기공학부)
오순택 (경북대학교 전자·전기공학부)
최시영 (경북대학교 전자·전기공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.7, 2003 , pp. 481-485 More about this Journal
Abstract
Amorphous silicon (a-Si:H) based TFT process has been studied at the maximum temperature of 15$0^{\circ}C$ with 25${\mu}{\textrm}{m}$ thick flexible and adhesive tape type polyimide foil substrate, which has benefit on handling a rugged, flexible plastic substrate trough sticking simply it to glass. This paper summarize the process procedure of the TFT on the plastic substrate and shows its electrical characteristics in comparison with glass substrate using primarily the ON/OFF current ratio and the field effect mobility as the quality criterion. The a-SiN:H coating layer played an important role in decreasing surface roughness of plastic substrate, so leakage current of TFT was decreased and mobility was increased. The results show that high quality a-Si:H TFTs can be fabricated on the plastic substrates through coating a rough plastic surface with a-SiN:H.
Keywords
polyimide; TFT; a-SiN:H;
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