• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.11-17
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• 2004

This research has been progressed for adhesive improvement of the Polyimide/Buffer layer/Cu at the COF(Chip On Film) which induced as the alternative plan about high concentration of a circuit or substrates according to demands of miniaturization and high efficiency of various electronic equipment. RF plasma equipment was applied to when plama pretreatment was performed for improvement of adhesive strength of PI and Cr as the buffer layer. Experimental fluents were a species of the buffer layer, depositied time and the ratio of $O_2$/Ar when performed to plasma pretreatment. The results are that Ni was superior to Cr at peel test according to a species of the buffer layer, peel strength and Cu THK were showed proportional relation to deposition structure of the same buffer layer and sample of the Cr depositied time(30 sec) and Cu depositied time(20 min) was showed good adhesion to peel test according to Cr's depositied time and Cu's depositied time. When perform PI's plasma pretreatment peel strength and $O_2$/Ar ratio were showed proportional relation. But $O_2$/Ar(2/5) was best condition since then decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.255-259
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• 2006

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. In this investigation, the SiON and Polyimide(PI) layer showed the most suitable properties. Under these conditions, the WVTR(water vapour transition rate) for PET can be reduced from level of $0.57\;g/m^2{\cdot}day$ (bare subtrate) to $1{\times}10^{-5}\;g/m^2{\cdot}day$ after application of a SiON and Polyimide layer. These results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.337-340
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• 2001

The control of high pretilt angle for nematic liquid crystal (NLC) with negative dielectric anisotropy on the rubbed blending polyimide (homeotropic and homogeneous alignment) surface were studied. High NLC pretilt angle generated on the blending polyimide (homeotropic polyimide and SE-7492 surface was measured and the NLC pretilt angle increases with blending ratio and rubbing strength. However, the NLC pretilt angle generated on the blending polyimide (homeotropic polyimide and SE-150 surface was not varied. The high pretilt angle the NLC using blending polyimide surface can be achieved.

• Journal of the Korean institute of surface engineering
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• v.39 no.4
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• pp.166-172
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• 2006

Metallized Polyimide films are extensively used as base materials in microelectronics, optical and automotive applications. However it is difficult to deposit metals on those because of their structural stabilities. In this work, polyimide films are modified by a wet process with alkalinemetalhydroxide and additives to introduce functional groups. The surface molecular structures of polyimide are investigated using X-ray photoelectron spectroscopy(XPS), fourier transform infrared reflection spectroscopy(FTIR-ATR), atomic force micro-scopic(AFM). XPS spectra and FTIR spectra show that the surface structure of polyimide is converted into potassium polyamate. AFM image and AFM cross-sectional analyses reveal the increased roughness on the modified surface of polyimide films. As a result, it is shown that the adhesion strength between polyimide surface and electroless nickel layer is increased by the nano-anchoring effect.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.165-169
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• 2004

This paper reports a miniaturized conductor-backed CPW (CBCPW) bandpass filter based on a thin film polyimide layer coated on CMOS-grade silicon. With a 20 ${\mu}{\textrm}{m}$-thick polyimide interface layer and back metallization on the CMOS-grade silicon, the interaction of electromagnetic fields with the lossy silicon substrate has been isolated, and as a result a low-loss and low-dispersive CBCPW line has been obtained. Measured attenuation constant at 20 GHz is below 1.2 ㏈/cm, which is compatible with the CPW on GaAs. In addition, by using the proposed CBCPW geometry, miniaturized BPF for Ku band application is designed and its measured frequency response shows excellent agreement with the predicted value with validating the performances of the proposed CBCPW geometry for RFIC interconnects and filter applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.267-268
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• 2005

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. In this investigation, the SiON and Polyimide(PI) layer showed the most suitable properties. Under these conditions, the WVTR(water vapour transition rate) for PET can be reduced from level of 0.57 g/$m^2$/day (bare subtrate) to $1{\times}10^{-5}$ /$m^2$/day after application of a SiON and Polyimide layer. These results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1167-1168
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• 2004

Polarized ultraviolet irradiation techniques have been developed recently to produce alignment of liquid crystals (LC). Because of the excellent thermal stability and the alignment ablility of polyimides, polyimides has attracted considerable research interest for the photoinduced alignment layer. Hasegawa and Taira confirmed homogeneous alignment of LC by the decompostion of a polyimide induced by lineraly ultra-violet polarized light. It was reported that ultraviolet visible absorption spectra of a polyimide alignment film showed a remarkable change upon irradiation. In this study, we synthesized phthalic polyimide and a naphthalenic polyimide in order to investigate the effect of the polyimide structure. Some difference in terms of the photo-induced molecular orientaion of liquid crystals were observed with the polyimide structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.337-340
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• 2001

The control of high pretilt angle far nematic liquid crystal (NLC) with negative dielectric anisotropy on the rubbed blending polyimide (homeotropic and homogeneous alignment) surface were studied. High NLC pretilt angle generated on the blending polyimide (homeotropic polyimide and SE-7492 surface was measured and the NLC pretilt angle increases with blending ratio and rubbing strength. However, the NLC pretilt angle generated on the blending polyimide (homeotropic polyimide and SE-150 surface was not varied. The high pretilt angle the NLC using blending polyimide surface can be acheived.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.972-973
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• 2007

Relationships between field effect mobility and grain size on pentacene thin-film transistors with $polyimide/SiO_2$ gate dielectrics have been studied. 6 kinds of polyimide were used as surface treatment gate dielectric layer. Grain size of the pentacene thin film were between 5 and $30\;{\mu}m$ and depended on the polyimide. The field effect mobility were also depended on the polyimide and the those values were from 0.027 to $0.69\;cm^2/(Vs)$. The field effect mobility tends to increase with increasing the grain size. Precursor type polyimide containing polyamic acid show better mobility of $0.69\;cm^2/(Vs)$ than soluble type polyimide. Bias stress characteristics in air are discussed in the basis of the grain size.

• Korean Journal of Optics and Photonics
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• v.24 no.2
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• pp.77-85
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• 2013

The precision of retardation measurement has been improved upto $3{\sigma}$ <0.005 nm after improvements are made to the conventional transmission ellipsometer. Improvements are made such that, i) the polarizer module instead of the sample stage is rotated, ii) the light source is replaced, iii) the starting points of two rotating modules are accurately synchronized, and iv) the fine background retardation is compensated. Together with the newly introduced RVD (Retardation Vector Difference) method, the improved instrument is successfully applied to characterize the ultra small optical birefringence of the rubbed polyimide alignment layer, after the residual retardation due to glass substrate whose magnitude is about 1.0 nm is properly subtracted. It is verified that the net retardation of the alignment layer ranges from 0.05 nm to 0.15 nm.