• E2M - 전기 전자와 첨단 소재
• /
• 제9권1호
• /
• pp.59-66
• /
• 1996

Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

• 한국전기전자재료학회논문지
• /
• 제17권2호
• /
• pp.196-200
• /
• 2004

Using polyimide Langmuir-Blodgett(LB) films as a tunneling harrier, we fabricated Au/Polyimide/1-layer arachidic acid/Pb structure in order to investigate electron transport properties through a junction. It was found that 9-layer polyimide LB films function as a good tunneling harrier in a study of current-voltage(I-V) chararteristics. And several peaks originating in the vibrational modes of the constituent molecules of 1-layer arachidic acid LB films were clearly observed in d$^2$V/dI$^2$- V corves.

• 한국조명전기설비학회지:조명전기설비
• /
• 제11권3호
• /
• pp.80-87
• /
• 1997

Polyimide LB막 의 시료 와 {{{{Al/{Al}_{2}{O}_{3}/PI(nL)/Au}}}} 에 대해 전압의 온도특성 실험에서 상부전극과 하부전극간에 일함수차를 발견하였다. Polyimide LB\ulcorner은 Z형으로 누적하거나 , imide화하면 막에 분극이 발생하지 않았다. 또 {{{{{C}_{15} TCNQ}}}} LB 막 시료{{{{Al/{Al}_{2}{O}_{3}/{C}_{15} TCNQ(10L)/Al}}}} 은 상, 하부 전극이 같아 일차함수가 없었으며 막에 분극이 발생하였다. LB 초박막 MIM 소자를 시료로 하여 실험한 결과 수백 mV 이상의 직류가 발생하였으므로 전기.전자 및 정보통신 분야의 산업용 전원으로 이용할 수 있다고 생각한다.

• 한국응용과학기술학회지
• /
• 제26권4호
• /
• pp.400-406
• /
• 2009

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

• 폴리머
• /
• 제26권5호
• /
• pp.634-643
• /
• 2002

고분자 주사슬에 벤젠과 sulfonyloxvimide moiety를 가지고 있는 polyamic acid 초박막을 LB 기법을 이용하여 제조한 다음 200 $^{\circ}C$에서 1시간 동안 열처리에 의해 감광성 폴리이미드 LB 필름을 얻었다. Polyamic acid는 THF-pyridine 공용매를 가지고 축중합에 의해 합성하였다. 모든 단량체와 고분자는 원소분석, FT-IR, $^1$H-NMR의 분광학적 측정을 통해 정량 정성분석을 행하였다. UV lithography 방법을 사용하여 금 기판 위에 제조한 감광성 폴리이미드 LB 필름의 마이크로 어레이 패턴을 제조하였다. 형성된 마이크로 어레이 패턴을 따라 두 가지의 자기조립 방법으로 단백질 cytochrome c 단분자 막을 고정화시켰다. 자기조립된 cytochrome c 단분자 막의 물리ㆍ전기 화학적 특성은 cyclic voltammetry와 AFM을 통해 조사하였으며 생물전자소자로의 응용 가능성에 대해서도 검토하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.475-478
• /
• 2000

Maxwell displacement current(MDC) was generated when the area per molecule was about 140${\AA}$$^2$and 100${\AA}$$^2$. MDC were investigated in connection with monolayer compression cycles. It was found that the maximum of MDC appeared at the molecular area just before the initial rise of surface pressure in compression cycles. The absorption spectra of polyamic acid containing p-methoxyazobenzene in a mixture of N,N-dimethylacetamide(DMAc) and benzene(1:1 by volume) solution was induced photoisomerization by UV and visible light irradiation. The precursor LB film was heated in a vacuum dry oven at 120$^{\circ}C$ in order to convert it into the LB film of polyimide. The absorption spectra of LB films were also induced photoisomerization by UV and visible light irradiation.

• 한국응용과학기술학회지
• /
• 제19권2호
• /
• pp.73-78
• /
• 2002

The polyimide(PI) Langmuir-Blodgett(LB) ultra thin films were prepared by imidizing the PAAS LB films of PMDA and benzidine system with a thermal treatment at $250^{\circ}C$ for 30min, where the PAAS LB films were formed on substrates by using LB technique. The thicknesses of one layer of PAAS and PI LB film that deposited at the surface pressure of 27mN/m were 20.9 and 4A, respectively. At low electric field, ohmic conduction($I^{\propto}$ V) was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}S/cm$. The dielectric constant of LB film was about 7.0.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1993년도 추계학술대회 논문집
• /
• pp.105-108
• /
• 1993

Behavior of electron in polyimide LB films of Al/polyimide LB films/Au (MIM) structures is reported in the present paper. From experimental results, it is known that there is a process where electron moves from Au electrode to Al electrode through LB film. And the electrons are presumed to move by diffusion since the direction is opposite to electric field.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
• /
• pp.111-114
• /
• 1995

This paper describes the imidization of PAAS(polyamic acid alkylamine salts) Langmuir-Blodgett (LB) films and the electrical properties of PAAS and polyimide(PI) LB films, The imidization conditons were investigated by TGA(Thermal Gravi-tational Analysis). FT-IR and UV/ visible absorption spectra. A thermal imidiczation was peformed at 300$^{\circ}C$ for 1 hour. The electrical properties of the PAAS and polymide LB films were measured by current-voltate(L-V) characteristics It shows that the electrical condcutivity of PL LB films is about 10 $\^$-15/S/cm which is two orders of magnetiude lower than that of the PAAS LB films A Schottky effect was also observed in both films.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권6호
• /
• pp.473-480
• /
• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.