• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.63 no.1
• /
• pp.46-49
• /
• 2014

$Pb(Zr_{0.52}Ti_{0.48})O_3(PZT)$ thin films deposited on $Ru/RuO_2$ bottom electrode that grown for in-situ progress used rf magnetron sputtering method. We investigated the dependence of the crystalline and electrical properties in the way of capacitors PZT thin films. Our results show that all PZT films indicated polycrystalline perovskite structure with preferred orientation (110) and no pyrochlore phase is observed. The electric properties of the Ru improved with increasing Ru thin films thickness. A well-fabricated Ru/PZT/Ru (100 nm) /$RuO_2$ capacitor showed a leakage current density in the order of $2.03{\times}10^{-7}$ $A/cm^2$ as a 50 kV/cm, a remnant polarization (Pr) of 9.22 ${\mu}C/cm^2$, and a coercive field (-EC) of -32.22 kV/cm. The results show that $Ru/Ru/RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.182-182
• /
• 2014

Multiferroic materials have attracted much attention due to their own fascinating fundamental physical properties and potential technological applications to magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because the enhanced ferromagnetism was found by the Fe-site ion substitution with magnetic ions. The structural, the magnetic and the ferroelectric properties of polycrystalline $BiFe_{1-x}Ni_xO_3$ (x=0, 0.01, 0.02, 0.03 and 0.05), which were prepared by the solid-state reaction and the rapid-sintering method, have been investigated. The x-ray diffraction patterns reveal that all the samples are in single phase and show rhombohedral structure with R3c space group. The magnetic properties are enhanced according to the doping content. The Ni-doped $BiFeO_3$ samples exhibit lossy P-E loop due to the oxygen vacancy. The leakage current density of Ni-doped samples (x=0.01 and 0.02) is increased by four orders of magnitude. On the other hand, the x=0.03 and 0.05 samples show the relative reduction of the leakage current.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.36.2-36.2
• /
• 2010

A small amount of Na incorporated in $CuInSe_2$ (CIS) absorption layer has become widely accepted as a requirement for efficient polycrystalline CIS solar cells. However, there is ongoing argument on the role of sodium incorporated in the absorber. In this paper, CIS absorption layers have been deposited using the three-stage co-evaporation process on Mo coated non-Alkali glass substrates. The NaF was evaporated during the second-stage with various fluxes. This paper is focusing on differences of micro-structure and composition ratio of the absorber realized with different Na contents and the variation of electrical properties of the cells with the corresponding absorbers. The analytical results of x-ray diffraction (XRD) patterns, field emission scanning electron microscope (FE-SEM), energy dispersive spectroscopy (EDS) and current-voltage characteristics will be discussed to investigate the effect of NaF flux on the CIS absorber formation and its cell performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.58-62
• /
• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.88-92
• /
• 2002

$Ba(Zn_{0.8}Co_{0.2})_{1/3}Ta_{2/3}O_3$ [BZCT(80/20)] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1450{\sim}1550^{\circ}C$ for 5hr. in air. The structural properties of BZCT(80/20) ceramics were investigated as a function of sintering temperature. The BZCT(80/20) ceramics sintered at $1550^{\circ}C$ showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZCT(80/20) ceramics sintered at $1550^{\circ}C$ was 7.50[$g/cm^2$]. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.351-351
• /
• 2011

Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.313-313
• /
• 2012

ZnO and $SnO_2$, well-known wide direct band-gap semiconductors, have been considered as the most promising functional materials due to their highly sensitive gas sensing and excellent optical properties. ZnO/$SnO_2$ epitaxial hetrostructure exhibited unique luminescence properties in contrast with individual tetra-pod ZnO and $SnO_2$ nanostructures. Polycrystalline $SnO_2$-based samples $Zn_xSn_{1-x}O_2$(x=0, 0.01, 0.03, 0.05) were prepared by solid state reaction and eco-friendly hydrothermal techniques. Scanning electron microscopy equipped with electron dispersive x-ray spectra confirms the formation of near stoichiometric $Zn_xSn_{1-x}O_2$ nanorods of diameter ~10 nm. X-ray diffraction analysis revealed the rutile structure, except for x=0.07, which may have a small part of $Zn_2SnO_4$ as a secondary phase.

• Korean Journal of Materials Research
• /
• v.4 no.3
• /
• pp.280-286
• /
• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

• Journal of Korea Foundry Society
• /
• v.17 no.3
• /
• pp.276-285
• /
• 1997

The effect of wheel surface condition on solidification behavior of Al-Cu ribbon was investigated in order to establish extreme levels of heat extraction. The condition of wheel surface was changed either by heating the wheel surface up to $200^{\circ}C$ or by coating boron nitride(BN) onto the the rim of a wheel. Heating the wheel surface up to $200^{\circ}C$ improved the wetting behavior between the molten metal and the rotating wheel, leading to an increase in the ratio of columnar structure to the entire thickness of Al-4.3wt%Cu and Al-33.2wt%Cu ribbons. For Al-4.3wt%Cu ribbon, assuming one grain as a single heterogeneous nucleation event at the contact point, the nucleation density with the wheel surface heated to $200^{\circ}C$, was $4{\times}10^6/mm^2$, and in the cases of BN coating with thin and thick layers, $10^5/mm^2$ and $5{\times}10^4/mm^2$, respectively. The largest cooling capacity of the wheel corresponded to the heated wheel surface, and as the thickness of BN coating layer increased, the cooling capacity of the wheel gradually decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.11
• /
• pp.1014-1019
• /
• 2006

The influence of the number of solution coatings on the densification of the PZT thick films was studied. PZT powder and PZT precursor solution was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were (A) PZT(80/20)/PZT(20/80), (B) PZT(70/30)/PZT(30/70) and (C) PZT(60/40)/PZT(40/60), (D) PZT(52/48)/PT. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 moth and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about $60{\mu}m$. A grain size was increased with increasing the coating number. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of PZT thick films was improved 30-100% as the number of coatings.