• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.290-291
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• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1708-1711
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• 2018

The polycrystalline sample of $Ba_2Co_{1.5}Mg_{0.5}Fe_{11.88}Ga_{0.12}O_{22}$ Y-type hexaferrite, doped with Ga-cation, was prepared by using the solid-state reaction method. The crystalline structure of sample was investigated by x-ray diffractometer (XRD), and the magnetic properties of sample were measured by vibrating sample magnetometer (VSM), and $M{\ddot{o}}ssbauer$ spectrometer. The crystal structure of prepared sample was determined to be rhombohedral with space group R-3m. From the temperature dependence of the magnetization curves under 100 Oe between 4.2 and 740 K, two temperature-dependent magnetic transitions occurred in the $Ba_2Co_{1.5}Mg_{0.5}Fe_{11.88}Ga_{0.12}O_{22}$ sample. $M{\ddot{o}}ssbauer$ spectra of the sample were analyzed at various temperatures ranging from 4.2 to 620 K, and the $Ba_2Co_{1.5}Mg_{0.5}Fe_{11.88}Ga_{0.12}O_{22}$ sample showed abrupt changes in $H_{hf}$ and $E_Q$ at 200 K, indicating the spin transition effect. We have also determined the magnetic transition temperature $T_C$, in addition to the temperature dependent magnetization and ZVC measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• 한국초전도ㆍ저온공학회논문지
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• 제25권2호
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• pp.5-9
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• 2023

The effect of La_0.7Sr_0.3MnO₃ (LSMO) addition on the superconducting property of Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_10+δ ((Bi, Pb)-2223) polycrystalline samples was studied. LSMO (0.3 wt.% to 2.0 wt.%) added (Bi, Pb)-2223 samples were prepared by using a solid-state reaction method. The XRD analyses show that as the LSMO addition increases, the volume fraction of the Bi-2223 phase is gradually decreased. The critical temperature (T_c) exhibits a gradual decrease with a single transition as the LSMO amount increases up to 1.0 wt.%, but a further addition of LSMO induces an abrupt decrease of T_c with a dual transition. The analyses on the local structure of the CuO₂ plane from the X-ray absorption fine structure (EXAFS) measurements showed that for the samples with low concentration of LSMO up to 1.0 wt.%, the Cu-O bond length and the CuO₂ plane ordering do not degrade from the values of pure (Bi, Pb)-2223, while they get worsen with a further increase of LSMO addition. These results open up the possibility of LSMO as artificial pinning centers of the (Bi, Pb)-2223 system for power application.

• 한국자기학회지
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• 제12권1호
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• pp.14-19
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• 2002

CMR 자성물질인 LSMO 페롭스카이트 망간산화물에 $^{57}$ Fe를 미량 치환한 L $a_{0.67}$S $r_{0.33}$M $n_{0.99}$$^{57}$ F $e_{0.01}$ $O_3$물질에 대하여 그 결정학적 및 자기적 특성을 x-선 회절 실험, 진동시료 자화율 측정 실험, 자기저항 실험, Mossbauer 분광 실험을 통하여 연구하였다. 물을 용매로 한 sol-gel법을 이용하여 단일상의 polycrystalline L $a_{0.67}$S $r_{0.33}$M $n_{0.99}$$^{57}$ F $e_{0.01}$ $O_3$분말시료를 합성하였으며, 결정구조는 격자 상수 $a_{0}$ =5.480 $\AA$, $\alpha$=60.259$^{\circ}$를 갖는 rhombohedral구조로 분석되었다. 상온에서의 magnetic moment 값은 60.15 emu/g임을 알 수 있었고 큐리온도( $T_{c}$)는 375 K로 결정하였다. Mossbauer 스펙트럼은 20-400 K 영역에서 측정되었으며, 온도증가에 따라 관측되는 비대칭적 선폭증가는 이방성 초미세자기장 요동 모델로 설명할 수 있었다. 이 때 이방성 초미세 자기장이 + $H_{0}$ 및 - $H_{0}$ 로 진동하는 시간 비율은 $P_{+}$= 0.80 및 $P_{-}$= 0.20으로 분석되었다. 이방성 초미세자기장 요동 진동수로부터 온도변화에 따른 이방성 에너지를 계산하였으며, 150 K에서 124.01 erg/$cm^3$로 최대값을 갖음을 알 수 있었다.다.었다.었다.다.었다.

• 한국결정성장학회지
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• 제5권1호
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• pp.25-36
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• 1995

유리기판(Corning 7059) 위에 Electron Beam Evaporator(EBE)로 진공 중에서 증착된 $Cd_{1-y}Zn_{y}Te$(CZT) 박막의 표면 조성비와 결정구조를 조사하였다. 증착시 기판의 온도는 각각 실온과 $300^{\circ}C$였으며, 열처리는 압력 $1 {\times} 10^{-6}$ torr하에서 $300^{\circ}C$에서 1시간 동안 행하였다. 증착된 CZT 박막의 표면조성비는 Cd 원자가 상대적으로 약 4% 정도 부족하였고, Zn원자는 비교적 안정하였다. 박막의 구조는 거의 Cubic phase인 다결정(polycrystal)이었다. $400^{\circ}C$에서 측정된 X-선 분말 회절상으로부터 구한 격자상수 값으로부터 계산된 열팽창 계수는 $6.30 {\times} 10^{-6}/^{\circ}C$ 이었다. 박막은 열처리에 의하여 회절상의 peak가 증가하였으나 기판의 온도가 결정화에 더 큰 영향을 미치는 것으로 판단된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.49-52
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• 2009

Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

• Bulletin of the Korean Chemical Society
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• 제25권4호
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• pp.480-484
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• 2004

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

• 열처리공학회지
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• 제28권3호
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• pp.134-138
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• 2015

Ag intermediated $TiO_2$ films were deposited by RF and DC magnetron sputtering and then vacuum annealed at 100, 200 and $300^{\circ}C$ for 30 minutes to investigate the effect of annealing temperature on the structural and optical properties of the films. For all depositions, the thickness of the $TiO_2$ and Ag films were kept constant at 24 and 15 nm by controlling the deposition time. As-deposited $TiO_2/Ag/TiO_2$ trilayer films have a weak crystalline and an optical reflectance in a near infrared wavelength region of 77.8%, while the films annealed at $300^{\circ}C$ show the polycrystalline structure and an increased mean optical reflectance of 80.4%. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the structural and optical properties of the $TiO_2/Ag/TiO_2$ films.