• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.169-171
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• 2009

We have fabricated CIGS thin film absorber layers by the evaporation of CIGS powders which were synthesized by solutions with different atomic ratio compositions. We found that the polycrystalline structural properties and optical properties of the deposited CIGS thin films were strongly dependent on the CIGS powder synthesis solution compositions. For three different solution compositions, Cu:In:Ga:Se= 4:3:1:8, 8:3:1:8, 12:3:1,8, the deposited thin film crystalline structures were varied form InSe crystalline structure to CIGS chalcopyrite structures. Our results showed that CIGS powder evaporation is potential for the one step fabrication process for CIGS thin film absorber layer deposition.

• 한국분말재료학회지
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• 제10권2호
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• pp.129-135
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• 2003

Nanocrystalline powders of $MnFeP_{1-x}As_x$(x=0.45-0.6) have been synthesized by mechanochemical reaction at room temperature using high-energy ball milling from mixtures of Mn, Fe, P, and As Powders. It has been found that a mechanically induced self-propagating reaction (MSR) occurs within 2 hours of milling and it produces very fine polycrystalline powder having a hexagonal $Fe_2P$ structure. Further milling up to 24 hours did not change the crystalline and average particle sizes or the phase composition of the milling product. When x is 0.65, no reaction among the reactants has been observed even after 24 hours of milling. As the P content decreases in $MnFeP_{1-x}As_x$, the incubation time for the MSR has increased and the lattice constants in both a and c axes have changed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1071-1074
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• 2007

6Mask CMOS process in low temperature polycrystalline silicon thin film transistors (poly-Si TFTs) has been developed and verified by manufacturing a 6Mask CMOS AMLCD panel. The novel 6Mask CMOS process is realized by eliminating the storage mask, gate mask and via open mask of conventional structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.746-748
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• 1998

Thin films of vanadium pentoxide ($V_{2}O_{5}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, surface composition and optical properties of films prepared under different substrates are characterized through XRD, SEM, AES, XPS and optical absorption measurements. The films prepared below $100^{\circ}C$ are amorphous, and those prepared above $200^{\circ}C$ are polycrystalline. Thermally Induced oxidation of films into higher oxide has been observed with increasing substrate temperature. Vanadium oxide films show two optical absorption bands indicating the presence of direct and indirect transitions.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.183-187
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_2$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_3$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_2$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_2$ and 16 % Ar with the $CHF_3$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• 한국광물학회지
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• 제9권1호
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• pp.35-42
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• 1996

Polycrystalline ZrH2 in tetragonal crystal system has been compressed in a modified Bassett-type diamond anvil cell up to 36.0 GPa at room temperature. X-ray diffraction data did not indicate any phase transitions at the present pressure range. The pressure dependence of the a-axis, c-axis, c/a and molar volume of ZrH2 was determined at pressures up to 36.0 GPa. Assuming the pressure derivative of the bulk modulus (K0') to be 4.11 from an ultrasonic value on Zr, bulk modulus (K0) was determined to be 160Gpa by fitting the pressure-volume data to the Birch-Murnaghan equation of state. Same sample was heated at $500^{\circ}C$ at the pressure of 9.8 GPa in a modified Sung-type diamond anvil cell. Unloaded and quenched sample revealed that the original tetragonal structure transforms into a hexagonal structured phase with a zero-pressure molar volume change of ~115.5%.

• 한국세라믹학회지
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• 제29권1호
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1162-1165
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1283-1286
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• 2006

A holding latch with level shifting function is proposed for power and cost effectiveness with low temperature polycrystalline silicon technology on the glass backplane. Layout area and power consumption of the proposed circuit are reduced by 10% and 52% compared with those of the typical structure which combines a static D-latch and a cross coupled level shifter for 2.2" qVGA panel, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1546-1549
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• 2005

Al-doped ZnO (ZnO:Al) thin films were grown on corning 1737 glass substrates by dc magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity is $6.0{\times}10^{-4}$ Ocm with the carrier concentration of $2.694{\times}10^{20}$ $cm^{-3}$ and Hall mobility of $20.426cm^2/Vs$. The average transmittance in the visible range was above 90%.