• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.113-117
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• 2005

Multiferroic $HoMnO_3$ single crystal was prepared using 4-point focused floating zone furnace, and polycrystalline $HoMn_{1-x}\;^57Fe_xO_3$ (x=0.00, 0.01, 0.02, 0.05) powders have been prepared by solid state reaction. Their magnetic and crystallographic properties are studied using MPMS, PPMS, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structure found to be a hexagonal and a magnetic easy-axis is (110) direction. As the external applied magnetic field increases, temperature of the dielectric constant anomaly is decreased. $HoMn_{0.95}\;^{57}Fe_{0.05}O_3$ shows huge quadrupole splitting value from the $M\ddot{o}ssbauer$ spectra.

• Journal of Magnetics
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• v.10 no.1
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• pp.10-13
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• 2005

We have studied effects of the partial substitution of $La^{3+}$ for $A^{2+}$ on the magnetic properties of double perovskites $A_2FeMoO_6$ (A=Ca, Sr and Ba). Polycrystalline $A_{2-x}La_xFeMoO_6(0{\leq}x{\leq}0.2)$ samples have been prepared by the conventional solid-state reaction in a stream of 5% $H_2$/Ar gas. The x-ray data indicate that A=Ca is monoclinic with the space group P$2_1$/n, A=Sr is tetragonal with the space group I4/mmm, and A=Ba is cubic with the space group Fm3m. The substitution of $La^{3+}$ for $A^{2+}$ results in a cell volume increase for A=Ca and a cell volume reduction for A=Ba. The decrease of saturation magnetization with increasing x arises from the reduction of magnetic moment associated with the electron doping and the disorder at the Fe and Mo sites. The partial substitution of magnetic $La^{3+}$ for $A^{2+}$ considerably enhances the Curie temperature $T_c$ from 316 K for x = 0 to 334 K for x = 0.2. This enhancement of $T_c$ with $La^{3+}$ doping originates from electron doping effects in addition to ionic size ones.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1263-1264
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• 2007

자계 유도 고상결정화(FESPC)를 이용하여 제작한 다결정실리콘(poly-Si) 박막 트랜지스터(TFT)는 비정질 실리콘 박막 트랜지스터(a-Si:H TFT)보다 뛰어난 전기적 특성과 우수한 안정성을 지닌다. $V_{DS}$ = -0.1 V에서 채널 폭과 길이가 각각 $5\;{\mu}m$, $7\;{\mu}m$인 P형 TFT의 이동도(${\mu}$)와 문턱 전압($V_{TH}$)은 각각 $31.98\;cm^2$/Vs, -6.14 V 이다. FESPC TFT는 일반 poly-Si TFT에 비해 채널 내 결정 경계 숫자가 많아서 상대적으로 열악한 특성을 가진다. 채널 길이 $5\;{\mu}m$인 TFT의 $V_{TH}$는 채널 길이 $18\;{\mu}m$ 소자의 $V_{TH}$보다 1.36V 작지만, 일반적으로 큰 값이다. 이 현상은 채널에 다수의 결정 경계가 존재하고, 수평 전계가 크기 때문이다. 수평 전계가 증가하면, 결정 경계의 전위 장벽 높이가 감소하게 되는데, 이는 DIGBL 효과이다. ${\mu}$의 증가에 따라서, 드레인 전류가 증가하고 $V_{TH}$은 감소한다. 활성화 에너지($E_a$)는 드레인 전압과 결정 경계의 수에 따라 변하는데, 드레인 전압이 크거나 결정 경계의 수가 감소하면 $E_a$는 감소한다. $E_a$가 감소하면 $V_{TH}$가 감소한다. 유리기판 위의 FESPC를 이용한 P형 poly-Si TFT의 $V_{TH}$는 채널의 길이와 $V_{DS}$에 영향을 받는다. 증가한 수평 전계가 결정 경계에서 에너지 장벽을 낮추는 효과를 일으키기 때문이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Progress in Superconductivity and Cryogenics
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• v.25 no.2
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• pp.5-9
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• 2023

The effect of La_0.7Sr_0.3MnO₃ (LSMO) addition on the superconducting property of Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_10+δ ((Bi, Pb)-2223) polycrystalline samples was studied. LSMO (0.3 wt.% to 2.0 wt.%) added (Bi, Pb)-2223 samples were prepared by using a solid-state reaction method. The XRD analyses show that as the LSMO addition increases, the volume fraction of the Bi-2223 phase is gradually decreased. The critical temperature (T_c) exhibits a gradual decrease with a single transition as the LSMO amount increases up to 1.0 wt.%, but a further addition of LSMO induces an abrupt decrease of T_c with a dual transition. The analyses on the local structure of the CuO₂ plane from the X-ray absorption fine structure (EXAFS) measurements showed that for the samples with low concentration of LSMO up to 1.0 wt.%, the Cu-O bond length and the CuO₂ plane ordering do not degrade from the values of pure (Bi, Pb)-2223, while they get worsen with a further increase of LSMO addition. These results open up the possibility of LSMO as artificial pinning centers of the (Bi, Pb)-2223 system for power application.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.1-5
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• 2019

We investigated the effect of Fe₃O₄ addition on the critical temperature of (Bi, Pb)-2223 polycrystalline samples. Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_10+δ + x wt. % Fe₃O₄ (x = 0.0, 0.2, 0.4, 0.6, and 0.8) samples were prepared by using a solid-state reaction method. The analysis of X-ray diffraction data indicates that as Fe₃O₄ is added, dominant phase of the sample changes from Bi-2223 to Bi-2212 with an increasing Bi-2201 phase. The transition temperature of the samples drastically decreased with the Fe₃O₄ addition. The resistance data of samples with x = 0.2 and 0.4 showed a double transition indicating a coexistence of Bi-2223 and Bi-2212 phase while the samples with x = 0.6 and 0.8 showed a single transition with a semiconducting behavior. This phase transition may originate from changes in local structure of the Bi-2223 system by Fe₃O₄ addition. Analysis of the pair distribution function of the Cu-O pair in the CuO₂ plane calculated from extended X-ray absorption fine structure data revealed that the oxygen coordination of copper ion changes from CuO₄ planar type (x = 0.0 - 0.4) to CuO₅ pyramidal type (x = 0.6, 0.8). The correlated Debye-Waller factor, providing information on the atomic disorder within the CuO₂ plane, shows an inverse relation to the coordination number. These results indicate that addition of Fe₃O₄ changes the oxygen distribution around Cu in the CuO₂ plane, causing a phase transition from Bi-2223 to more stable Bi-2212/Bi-2201 phases.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.