• Bulletin of the Korean Chemical Society
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• 제11권4호
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• pp.339-342
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• 1990

$Gd_2O_3-ThO_2$ solid solutions containing 8,10 and 12 mol % $ThO_2$ were synthesized with spectroscopically pure $Gd_2O_3,$ and $ThO_2$ polycrystalline powders. X-ray diffraction revealed that all synthesized specimens have the modified fluorite structure, and the lattice parameter of $Gd_2O_3$ is nearly unchanged with increasing $ThO_2$ mol %. Both ac and dc conductivities were measured in the temperature range $500-1100^{\circ}C$ under $Po_2's$ from $10^{-6}$ to $10^{-1}$ atm. The dc conductivities are nearly independent of $Po_2,$ and agree with the ac values. This implies that the solid solutions are ionic conductors. The conductivity increases with increasing $ThO_2$ mol % with an average activation energy of 1.23 eV. An oxygen interstitial defect and ionic hopping conduction are suggested.

• 한국주조공학회지
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• 제33권4호
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• pp.157-161
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• 2013

A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ${\geq}$ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.

• 한국전산구조공학회논문집
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• 제24권2호
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• pp.185-191
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• 2011

재료의 마이크로 스케일 해석에서 결정의 geometrically necessary dislocation(GND) 효과에 의한 소성 구배(plastic gradient)의 고려는 재료의 소성 거동에 큰 영향을 미칠 수 있다. 본 연구에서는 먼 거리(long range) 전위(dislocation)의 영향(또는 GND 효과)을 고려하여 소성 구배의 영향을 받는 다결정 고체(polycrystalline solids)의 거동을 유한요소해석을 이용하여 살펴보았다. 탄성(elastic)과 소성(plastic) 변형에 추가적으로 먼 거리 변형률(long range strain)을 고려한 항(term)이 포함된 변형 구배(deformation gradient)의 multiplicative decomposition 모델을 기반으로 하여 소성 구배 효과를 해석 모델에 포함하였다. 먼 거리 변형률에 의한 영향을 살펴보기 위해 구배 경화 계수(gradient hardness coefficient)와 먼거리 변형률 길이에 대한 재료 변수(parameter)가 사용되었다. 각각의 계수들이 다결정 고체의 거동에 미치는 영향을 확인하기 위해 두 변수의 적용에 따른 다결정 고체의 거동을 분석하였다. 단결정 및 다결정 재료의 GND 효과에 의한 소성 구배를 고려해서, 고려하지 않은 경우와 비교하여 발생하는 경화(hardening)의 차이를 분석함으로서 GND의 다결정 고체 거동의 영향을 확인하였다.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.188-192
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• 1996

Diamond based electronic devices promise to exhibit unique properties. In order to realize devices diamond has to be doped to render it electrically conductive. In the present work the doping of diamond and of polycrystalline CVD diamond films are reviewd with particular emphasis to ion-implantation doping and to attempts to dope diamond by in-diffusion of the dopants. The quest for finding ways to obtain n-type conductivity in diamond will be critically examined.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.459-462
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• 2007

An electric field was applied to a conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced through a solid state transformation within the range of a millisecond. Uniformly distributed grains were obtained due to enormously high heating rate.

• 한국세라믹학회지
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• 제47권1호
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• pp.71-74
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• 2010

We have investigated protonic conduction in highly dense (>98%) polycrystalline Y-doepd $BaZrO_3$ (BYZ) ceramic with an average grain size of ~85 nm. It is observed that the protonic conductivity across the grain boundaries in this nano-crystallilne BYZ (n-BYZ) is significantly higher than the microcrystalline counterpart. Such a remarkable enhancement in grain boundary conductivity results in high overall conductivity that may allow this chemically stable protonic conductor to serve as a solid electrolyte for low-temperature solid oxide fuel cell applications.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.462-465
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• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 추계학술발표회논문집(2)
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• pp.707-712
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• 1995

Grain boundary diffusion plays significant role in the fission gas release, which is one of the crucial processes dominating nuclear fuel performance. Gaseous fission products such as Xe and Kr generated inside fuel pellet have to diffuse in the lattice and in the grain boundary before they reach open space in the fuel rod. In the mean time, the grains in the fuel pellet grow and shrink according to grain growth kinetics, especially at elevated temperature at which nuclear reactors are operating. Thus the boundary movement ascribed to the grain growth greatly influences the fission gas release rate by lengthening or shortening the lattice diffusion distance, which is the rate limiting step. Sweeping fission gases by the moving boundary contributes to the increment of the fission gas release as well. Lattice and grain boundary diffusion processes in the fission gas release can be studied by 'tracer diffusion' technique, by which grain boundary diffusion can be estimated and used directly for low burn-up fission gas release analysis. However, even for tracer diffusion analysis, taking both the intragranular grain growth and the diffusion processes simultaneously into consideration is not easy. Only a few models accounting for the both processes are available and mostly handle them numerically. Numerical solutions are limited in the practical use. Here in this paper, an approximate analytical solution of the lattice and stationary grain boundary diffusion in a polycrystalline solid is developed for the tracer diffusion techniques. This short closed-form solution is compared to available exact and numerical solutions and turns out to be acceptably accurate. It can be applied to the theoretical modeling and the experimental analysis, especially PIE (post irradiation examination), of low burn up fission. gas release.

• 융합정보논문지
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• 제9권5호
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• pp.117-124
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• 2019

본 논문에서는 AMOLED 디스플레이 구동회로로 사용되는 박막트랜지스터의 구성요소 중에서 반도제 물질 제조의 최근 동향에 대해 논한다. 트랜지스터에 적용을 위해 특성이 좋은 반도체 막을 얻는 방법으로 비정질 실리콘을 다결정 실리콘으로 변화시켜야 하는데 레이저와 열처리 방법이 있으며, 레이저를 이용한 기술에는 SLS(Sequential Lateral Solidification), ELA(Excimer Laser Annealing), TDX(Thin-beam Directional Crystallization), 열처리 기술에는 SPC(Solid Phase Crystallization), SGS(Super Grain Silicon), MIC(Metal Induced Crystallization), FALC(Field Aided Lateral Crystallization)가 대표적이며, 이들에 대해 상세히 설명한다. 본 연구실에서 연구중인 레이저 결정화 기술의 대형 AMOLED 디스플레이 제작을 위한 연구 내용도 다룬다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.