• Title/Summary/Keyword: Polishing time

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Tribological Characteristics of Conditioning Methods on Polishing Pad (컨디셔닝 방식에 따른 패드의 트라이볼로지적 특성)

  • Lee, Hyun-Seop;Park, Boum-Young;Seo, Heon-Deok;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.358-359
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    • 2005
  • Chemical mechanical polishing(CMP) process depends on a variety of variables. Especially, surface roughness of pad plays a key role in material removal in CMP in terms of transportation ability of pores and real contact area. The surface roughness is deteriorated with polishing time by applied pressure and relative velocity. In this reason, diamond conditioner has been used to maintain the roughness on the pad. The authors try to investigate the correlation between pad roughness and frictional behavior by comparing ex-situ conditioning with in-situ conditioning.

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New Robbt Force Control Technique for Deburring and Polishing Process (로봇의 디버링 작업이나 표면 광택작업을 위한 새로운 힘제어 기술 개발)

  • Jeong, Seul
    • Journal of Institute of Control, Robotics and Systems
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    • v.6 no.9
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    • pp.786-795
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    • 2000
  • In this paper, a new impedance force control method for deburring and polishing process is proposed. The proposed method is robust to deal with unknown environment stiffness as unknown well as environment location. An adaptive technique is used to minimize the force error occurred due to unknown environment surface profile. A robust position control algorithm based on time-delayed information is used to cancel out uncertainties in robot dynamics. A three link robot manipulator is used to demonstrate performances of the proposed control on deburring and polishing tasks. Stability analysis for the adaptive control is presented and its results are confirmed by simulations.

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Determination of End Point for Direct Chemical Mechanical Polishing of Shallow Trench Isolation Structure

  • Seo, Yong-Jin;Lee, Kyoung-Jin;Kim, Sang-Yong;Lee, Woo-Sun
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.1
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    • pp.28-32
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    • 2003
  • In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

A Study on Frictional Characteristics and Polishing Result of SiO2 Slurry in CMP (CMP시 SiO2 슬러리의 마찰 특성과 연마결과에 관한 연구)

  • Lee Hyunseop;Park Boumyoung;Seo Heondeok;Jung Jaewoo;Jeong Sukhoon;Jeong Haedo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.7 s.238
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    • pp.983-989
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    • 2005
  • The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.

Development of Auto Polishing System for Automobile Door A-Fuel Filler using Image Processing (영상처리를 이용한 자동차 도어필러의 자동 폴리싱 시스템 개발)

  • Kim, Seong-Jin;Lee, Seong-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.4
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    • pp.1807-1812
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    • 2014
  • A plastic has a various advantages in engineering elements that it can be formed a curve surface without restriction of shape and product the high volume with various color and lower price. Also, it is being used for many parts of automobile as the weight of cars is getting lighter. The Door A-Fuel Filler is a automobile plastic part by injection molding production. The injected products are involved a lot of factors for the inferior goods after painting. Therefore the painted products are required to have the process of the polishing in order to eliminate the faults. Now polishing process is being worked by hands. The workers tend to evade the process of polishing because the working needs a lot of powers momentarily. This paper presents the development of auto-polishing system that can check the inferior goods by the vision system and control the polishing process by the motion system. As a result, Shorten production time (30 seconds), and decreases by 1 person to work to increase the competitiveness of the production cost was to expect improvement.

Fabrication of R-plane Sapphire wafer for Nonpolar a-plane GaN (비극성 a-GaN용 R-면 사파이어 기판의 제조)

  • Kang, Jin-Ki;Kim, Jung-Hwan;Kim, Young-Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.3
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    • pp.25-32
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    • 2011
  • We have studied on the slicing and polishing processes of R-plane sapphire wafers for the substrates of UHB nonpolar a-plane GaN LED. The fabrication conditions of the R-plane and c-plane wafers were influenced by the large anisotropic properties (mechanical properties) of the sapphire. The slicing process was more affected by the anisotropic properties of R-plane than the polishing process. When the slicing direction was $45^{\circ}$ to the a-flat, the slicing time was shorter and the quality of as-slicing wafers was better than the slicing direction of normal to the a-flat. The MRR(Material removal rate) of mechanical polishing processes such as lapping and DMP(Diamond mechanical polishing) did not show significant differences between the R-plane and c-plane. The MRR of the c-plane was about two times higher than that of R-planes at the CMP(Chemical mechanical polishing) process due to the formation of hydrolysis reaction layers on the surface of the c-plane.

Clinical and Microbiological Study about Efficacy of Air-polishing and Scaling and Root-planing

  • Yang, Keon-Il;Park, Do-Young;Kim, Byung-Ock;Yu, Sang-Joun
    • International Journal of Oral Biology
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    • v.40 no.2
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    • pp.93-101
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    • 2015
  • The efficacy of air-polishing on subgingival debridement, as compared to scaling and root planning (SRP), was evaluated clinically and microbiologically. Fifteen patients diagnosed as chronic periodontitis, and having single-root tooth over 5 mm of pocket depth symmetrically in the left and right quadrant, were investigated. Subgingival debridement was performed by SRP and air-polishing. The results were evaluated and compared clinically and microbiologically. Probing pocket depth (PPD), bleeding on probing (BOP), relative attachment level (RAL) and change of gingival crevicular fluid (GCF) were assessed before treatment, and at 14 and 60 days after treatment. Microbial analysis was done pre-treatment, post-treatment, and at 14 and 60 days after treatment. Results of air polishing showed that post treatment, the PPD and BOP decreased, and attachment gain was observed. There was no clinical difference when compared to SRP. The volume of GCF decreased at 14 days, and increased again at 60 days. Compared to SRP, there was a statistical significance of the volume of GCF at 60 days in air-polishing. In the microbial analysis, high-risk bacteria that cause periodontal disease were remarkably reduced. They decreased immediately after treatment, but increased again with the passage of time. Thus, our results show that subgingival debridement by air-polishing was effective for decrease of pocket depth, attachment gain, decrease of GCF and inhibition of pathogens. Further studies are required to compare air-polishing and SRP, considering factors such as degree of pocket depth and calculus existence.

Color stability of bulk-fill and incremental-fill resin-based composites polished with aluminum-oxide impregnated disks

  • Koc-Vural, Uzay;Baltacioglu, Ismail;Altinci, Pinar
    • Restorative Dentistry and Endodontics
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    • v.42 no.2
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    • pp.118-124
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    • 2017
  • Objectives: This study aimed to evaluate the color stability of bulk-fill and nanohybrid resin-based composites polished with 3 different, multistep, aluminum-oxide impregnated finishing and polishing disks. Materials and Methods: Disk-shaped specimens (8 mm in diameter and 4 mm in thickness) were light-cured between two glass slabs using one nanohybid bulk-fill (Tetric EvoCeram, Ivoclar Vivadent), one micro-hybrid bulk-fill (Quixfil, Dentsply), and two nanohybrid incremental-fill (Filtek Ultimate, 3M ESPE; Herculite XRV Ultra, Kerr) resin-based composites, and aged by thermocycling (between $5-55^{\circ}C$, 3,000 cycles). Then, they were divided into subgroups according to the polishing procedure as SwissFlex ($Colt\grave{e}ne/Whaledent$), Optidisc (Kerr), and Praxis TDV (TDV Dental) (n = 12 per subgroup). One surface of each specimen was left unpolished. All specimens were immersed in coffee solution at $37^{\circ}C$. The color differences (${\Delta}E$) were measured after 1 and 7 days of storage using a colorimeter based on CIE Lab system. The data were analyzed by univariate ANOVA, Mann-Whitney U test, and Friedmann tests (${\alpha}=0.05$). Results: Univariate ANOVA detected significant interactions between polishing procedure and composite resin and polishing procedure and storage time (p < 0.05). Significant color changes were detected after 1 day storage in coffee solution (p < 0.05), except Quixfil/Optidisc which was color-stable after 7 days (p > 0.05). Polishing reduced the discoloration resistance of Tetric EvoCeram/SwissFlex, Tetric EvoCeram/Praxis TDV, Quixfil-SwissFlex, and all Herculite XRV Ultra groups after 7 days storage (p < 0.05). Conclusions: Discoloration resistance of bulk-fill resin-based composites can be significantly affected by the polishing procedures.

Effect of Current Density on Material Removal in Cu ECMP (구리 ECMP에서 전류밀도가 재료제거에 미치는 영향)

  • Park, Eunjeong;Lee, Hyunseop;Jeong, Hobin;Jeong, Haedo
    • Tribology and Lubricants
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    • v.31 no.3
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    • pp.79-85
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    • 2015
  • RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.

Electropolishing Characteristics of Stainless Steel for Industrial Application (산업현장 적용을 위한 스테인레스 스틸의 전해연마 특성)

  • Kim, Soo Han;Lee, Seung Heon;Cho, Jaehoon;Kim, Sang Bum;Choi, Joongso;Park, Chulhwan
    • Journal of the Korean institute of surface engineering
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    • v.49 no.4
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    • pp.363-367
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    • 2016
  • For the industrial application of electropolishing process, we investigated electropolishing characteristics of stainless steel through increasing the specimen size or electrode gap. In this study, we performed a set of experiment with the specimen size of $10cm{\times}10cm$ and the electrode gap of 1 cm or more. In the view of the electropolishing process, the electrolyte temperature and the polishing time were most important factors compared with the current density and the electrode gap. Especially, the electrolyte temperature most importantly affected surface roughness and current efficiency on electropolishing characteristics. For the industrial application of electropolishing process, it should be considered for important factors such as electrolyte temperature, polishing time, current density and electrode gap, etc.