• Title/Summary/Keyword: Polishing time

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Changes in Subjective Symptom, Tear Film Stabilization and Blinking Rates when Wearing RGP Lenses with Different Polishing Conditions for Certain Period of Time (연마상태가 다른 RGP렌즈의 일정기간 착용 시 렌즈착용자의 자각적 증상, 눈물막 안정 및 순목횟수 변화)

  • Park, Mijung;Kim, Hyo Gyum;Bae, Jun Seob;Park, Jung Ju;Kim, So Ra
    • Journal of Korean Ophthalmic Optics Society
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    • v.19 no.1
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    • pp.31-42
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    • 2014
  • Purpose: The present study was conducted to investigate the effect of the physical properties of RGP lens induced by lens polishing on the actual wearer's subjective comfort, the tear film break-up time and the blinking rate as a follow-up study that revealed the relationship between the lens physical properties during lens manufacturing and lens wearer's factors. Methods: RGP lenses made from the three different polishing conditions (25, 50 and 100 seconds) were applied on 28 eyes of 17 subjects, aged 20 to 29 years, without any known disease and surgical history in the eyes. While the subjects were asked to wear the RGP lenses longer than a week, the questionnaire for the comfortability was administered everyday. Subjective and objective tear break-up time and blinking rate of the wearers were further measured. Results: The wearer's subjective comfortability showed some difference in the type of discomfort and satisfaction score according to the polishing status when wearing RGP lenses made from different polishing conditions longer than a week, and a bigger difference in satisfaction score induced by polishing condition was especially shown in experienced RGP lens wearer rather than un-experienced wearer. In the case of RGP lens wearer compared with the ones without the wearing experience, as the wearing time increased subjective and objective tear break-up time were increased and the blinking rate was decreased. However, subjective and objective tear break-up time were tended to decrease with even longer wearing time when wearing the RGP lens made from the polishment for 100 seconds. Conclusions: These results confirmed that the optimization of physical properties of the lens may not give the same effect on the wearer's subjective and objective symptoms and other factors when actual wearing. From the results, it can suggest that the success rate of RGP lens wear may be changed by physiological factors such as the stabilization of wearer's tear film, comfortability and lens wearing experience when wearing RGP lens based on 'The manufacturing standard for soft contact lens/hard contact lens' provided by Korea Food and Drug Administration.

INFLUENCE OF LOW-INTENSITY CURING AND POLISHING PERIOD ON MARGINAL LEAKAGE OF COMPOSITE (광중합형 레진에서 초기 저광도 광중합 및 연마 시기가 변연부 미세 누출에 미치는 영향)

  • Lee, Sang-Hoon;Jeong, Il-Young;Roh, Byoung-Duck
    • Restorative Dentistry and Endodontics
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    • v.25 no.1
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    • pp.85-90
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    • 2000
  • For more esthetic treatments the use of composite in molar areas are increasing. But polymerzation shrinkage that cause marginal leakage and cuspal deflection has been the problems of composites. The purpose of this study is to compare the effect of low intensity curing and polishing period on marginal leakage. Cavities were prepared on the buccal or lingual surface of forty five sound extracted human teeth and etching, application of bonding agent and filling of composite was done. Group 1 was light cured at intensity of 600$mW/cm^2$ for 41 seconds and polished. Group 2 was light cured at intensity of 300$mW/cm^2$ for 2 seconds and polished and after polishing it was light cured for 40 seconds at 600$mW/cm^2$. Group 3 was light cured at intensity of 300$mW/cm^2$ for 2 seconds and waited for 5 minutes and after curing at 600$mW/cm^2$ for 40 seconds polishing was done. The specimens were thermocycled at $5^{\circ}C$ and $55^{\circ}C$ for 1000 cycles and immersed in 2% methylene blue solution for 24 hours. Composite-tooth interface was examined under stereobinocular microscope for dye penetration. The results were as follows : 1. Group which were cured at low intensity and polished after curing at high intensity showed less marginal leakage than group which were cured at high intensity for 41 seconds(p<0.05). 2. Marginal leakage between group which were cured at low intensity and polished immediately and group which were cured at high intensity for 41 second were not significantly different. Light curing at low intensity can reduce marginal leakage but polishing immediately after curing at low intensity for short time can affect marginal leakage.

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TEMPERATURE CHANGES IN THE PULP ACCORDING TO VAR10US RESTORATIVE MATERIALS AND BASES DURING POLISHING PROCEDURE (연마시 여러 가지 수복재와 이장재의 사용에 따른 치수내 온도변화)

  • Baik, Byeong-Ju;Lee, Doo-Cheol;Kim, Mi-Ra;Kim, Jae-Gon
    • Journal of the korean academy of Pediatric Dentistry
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    • v.27 no.3
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    • pp.410-418
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    • 2000
  • An in vitro study was performed to evaluate the effect of four variables on the temperature rise produced by polishing of restorations. The four variables were : restorative material, base, thickness of remaining dentin, continuous polishing or intermittent polishing. Class V cavities were cut on extracted molar and restored with composite resin, resin-modified glass ionomer cement, compomer, amalgam on the various bases (glass ionomer cement, zinc oxide eugenol cement, zinc phosphate cement) Dentin thickness under the restoration was 0.5mm, 1.5mm. Polishing was done with an aluminum oxide-coated disc. Polishing time was continuous or intermittent for up to 1 minute. Intra-pulpal temperature increased almost linearly in all cases. Amalgam produced highest temperature rises at the pulp, while the composite resin, resin-modified glass ionomer cement and compomer were not different for each other. The rate and extent of temperature rising of amalgam restoration was reduced by presence of a cement base. Zinc oxide eugenol cement bases showed the highest temperature rise, while glass ionomer cement, zinc phosphate cement were not different to the untreated tooth Thickness of remaining dentin was only significant for the amalgam restoration. Continuous polishing produced higher temperature rise than intermittent polishing.

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A Study on the Reduction of Dishing and Erosion Defects (텅스텐 CMP에서 디싱 및 에로젼 결함 감소에 관한 연구)

  • Jeong, Hae-Do;Park, Boum-Young;Kim, Ho-Youn;Kim, Hyoung-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.140-143
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    • 2004
  • Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

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A Experimental Study on Efficient Applicable Combination of Super Finishing Films for Mirror Surface Machining (경면가공을 위한 수퍼피니싱필름의 효율적인 적용조합에 관한 실험적 연구)

  • Cho, Kang-Su;Kim, Sang-Kyu;Cho, Young-Tae;Jung, Yoon-Gyo
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.13 no.1
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    • pp.121-128
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    • 2014
  • Superfinishing is essential for mirror surfaces, because among mechanical components cylindrical workpieces such as spindles must maintain precision and reliability with respect to functional characteristics. However, research on standardization of polishing film application combination to obtain mirror surfaces is insufficient. Consequently, this has been a factor in rising costs of mechanical components. Therefore, in this study, experiments have been conducted to determine efficient polishing film application combination for mirror surfaces ranging from ductile materials such as SM45C, brass, aluminium 7075, and titanium to brittle materials such as $Al_20_3$, SiC, $Si_3N_4$, and $ZrO_2$. From the experimental results, efficient polishing film application combination for metallic materials and ceramic materials is confirmed.

Bio-polishing and Silket Treatment of Cotton Yarns (면사의 효소가공 및 실켓 가공)

  • Bae, Young-Hwan;Lee, Ji-Wan;Son, Young-A;Kim, Ju-Hae;Kwon, Mi-Yeon;Kim, Eui-Hwa;Lee, Seung-Goo
    • Textile Coloration and Finishing
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    • v.20 no.4
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    • pp.15-20
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    • 2008
  • The cotton yarn was subjected to bio-polishing treatment with three commercial enzymes(Cellusoft L, Denimax-991L and Denimax-acid) to remove the fuzz on the cotton yarn. Also, enzyme treated cotton yarns were compared with singeing cotton yarns. Experimental variables of enzyme treated cotton yarn were as follow: concentration of enzyme solution and NaOH, dipping time, and processing temperature. The enzymatic treatments were evaluated by analyzing the effect on yarn count, twist contraction, evenness and tenacity. As the results, enzymatic treatment on cotton yarn induced same effects as the traditional singeing treatment. Also, silket treatment of cotton yarn after bio-polishing enhanced the tensile properties of the cotton yarn.

A Study on the Reduction of Dishing and Erosion Defects in Tungsten CMP (텅스텐 CMP에서 디싱 및 에로젼 결함 감소에 관한 연구)

  • Park Boumyoung;Kim Hoyoun;Kim Gooyoun;Kim Hyoungjae;Jeong Haedo
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.2
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    • pp.38-45
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    • 2005
  • Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.

A Study on the Optimal Machining of 12 inch Wafer Polishing by Taguchi Method (다구찌 방법에 의한 12인치 웨이퍼 폴리싱의 가공특성에 관한 연구)

  • Choi, Woong-Kirl;Choi, Seung-Gun;Shin, Hyun-Jung;Lee, Eun-Sang
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.6
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    • pp.48-54
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    • 2012
  • In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

Polishing Characteristics of Pt Electrode Materials by Addition of Oxidizer (산화제 첨가에 따른 백금 전극 물질의 연마 특성)

  • Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1384-1385
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    • 2006
  • Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

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