한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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- Pages.140-143
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- 2004
텅스텐 CMP에서 디싱 및 에로젼 결함 감소에 관한 연구
A Study on the Reduction of Dishing and Erosion Defects
- Jeong, Hae-Do (School of Mechanical Eng., Pusan National Uni.) ;
- Park, Boum-Young (Precision and Mechanical Eng., Pusan National Uni) ;
- Kim, Ho-Youn (DongbuAnam Semiconductor) ;
- Kim, Hyoung-Jae (UC Berkeley)
- 발행 : 2004.11.11
초록
Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.
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