• 한국안광학회지
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• 제19권1호
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• pp.31-42
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• 2014

목적: 본 연구는 RGP렌즈 제조 시 렌즈물성과 렌즈착용자 요인과의 관계를 밝힌 선행연구의 후속 연구로 RGP렌즈 연마로 유발된 렌즈물성의 차이가 일정기간 착용 후 착용자가 느끼는 주관적 착용감 및 눈물막 파괴시간, 순목횟수 등에 미치는 영향을 알아보고자 하였다. 방법: 안질환이나 안과적 수술경험이 없는 20대 17명(남자7명, 여자 10명)의 28안에게 각기 다른 연마조건(25초, 50초 및 100초)으로 제조된 3 종류의 렌즈를 각각 1주일 이상 착용하게 하였으며 매일 설문지를 통하여 착용 중의 착용감을 조사하였고, 자각적 및 타각적 눈물막 파괴시간과 순목횟수를 측정하였다. 결과: 연마조건이 다르게 제조된 RGP렌즈를 일주일 이상 착용하였을 때 렌즈 착용자의 주관적 착용감은 렌즈 별로 불편감의 종류나 착용감 점수에서 차이를 보였으며, 특히 RGP렌즈 착용 경험자의 경우는 RGP렌즈 착용 미경험자와 비교하여 연마조건에 따른 착용감 점수의 차이가 크게 나타나는 경향을 보였다. RGP렌즈 착용 경험자의 경우 착용시간이 증가할수록 착용 미경험자에 비하여 렌즈에 더 잘 적응하는 양상을 보여 자각적 및 타각적 눈물막 파괴시간은 더욱 증가하는 경향을 보였으며, 순목횟수는 감소하는 경향을 보였다. 그러나 RGP렌즈 착용 경험 유무와는 관계없이 100초 연마렌즈 착용 시는 착용시간이 길어지더라도 자각적 및 타각적 눈물막 파괴시간은 감소하는 경향을 보였다. 결론: 이상의 결과로 렌즈물성의 최적화가 실제 착용 시에는 착용자의 자각적 및 타각적 증상에서도 동일한 효과를 내는 요인이 되지 못할 수도 있음을 확인하였다. 본 연구결과로부터 현재 식약처에서 제시하고 있는 '소프트콘택트렌즈/하드콘택트렌즈의 제조 기준규격'에 따라 제조된 RGP렌즈는 실제 착용 시 착용자의 눈물막 안정화나 착용감, 렌즈 착용 경험 유무와 같은 생리적 요인에 따라 착용성공률이 달라질 수 있음을 제안할 수 있다.

• Restorative Dentistry and Endodontics
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• 제25권1호
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• pp.85-90
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• 2000

For more esthetic treatments the use of composite in molar areas are increasing. But polymerzation shrinkage that cause marginal leakage and cuspal deflection has been the problems of composites. The purpose of this study is to compare the effect of low intensity curing and polishing period on marginal leakage. Cavities were prepared on the buccal or lingual surface of forty five sound extracted human teeth and etching, application of bonding agent and filling of composite was done. Group 1 was light cured at intensity of 600$mW/cm^2$ for 41 seconds and polished. Group 2 was light cured at intensity of 300$mW/cm^2$ for 2 seconds and polished and after polishing it was light cured for 40 seconds at 600$mW/cm^2$. Group 3 was light cured at intensity of 300$mW/cm^2$ for 2 seconds and waited for 5 minutes and after curing at 600$mW/cm^2$ for 40 seconds polishing was done. The specimens were thermocycled at $5^{\circ}C$ and $55^{\circ}C$ for 1000 cycles and immersed in 2% methylene blue solution for 24 hours. Composite-tooth interface was examined under stereobinocular microscope for dye penetration. The results were as follows : 1. Group which were cured at low intensity and polished after curing at high intensity showed less marginal leakage than group which were cured at high intensity for 41 seconds(p<0.05). 2. Marginal leakage between group which were cured at low intensity and polished immediately and group which were cured at high intensity for 41 second were not significantly different. Light curing at low intensity can reduce marginal leakage but polishing immediately after curing at low intensity for short time can affect marginal leakage.

• 대한소아치과학회지
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• 제27권3호
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• pp.410-418
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• 2000

치아수복시 마무리 과정에서의 연마는 수복물의 수명 및 심미성을 결정하는 중요한 과정으로서 연마시 마찰열의 발생으로 인하여 치수에 위해작용을 줄 수 있으므로 주의를 하여야 한다. 여러 가지 수복 재료를 연마하는 동안 치수내에서 발생하는 열의 변화를 수복물 종류, 이장재 종류, 잔존 상아질의 두께, 연마 시간의 차이에 따라 조사하고자 발치된 구치에 수복물을 충전한 후 aluminum-oxide coated disc를 이용하여 연마하는 과정에서 thermocouple을 이용하여 치수내 온도값을 측정하였으며, 이에 대한 통계적 분석을 시행하여 다음과 같은 결과를 얻었다. 모든 경우에서 연마 시간이 증가함에 따라 치수내 온도가 증가하였으며, 아말감 연마시 다른 수복 재료에 비해 큰 온도 증가치를 보였으나 composite resin, glass ionomer cement, 그리고 compomer에서는 연마에 따른 온도 변화차가 관찰되지 않았다. 아말감 하방에 이장재를 사용한 경우에 이장재를 사용하지 않았을 경우에 비해 온도 증가량이 적었으며, 다른 수복재에서는 이장재 사용여부에 따른 온도 증가량의 차이는 존재하지 않았다. 본 실험에서 사용된 이장재 중 glass ionomer cement와 zinc phosphate cement에 비해 zinc oxide eugenol cement의 열 차단 효과가 가장 작았다. 수복물에 간헐적인 연마를 시행한 경우, 지속적인 연마를 시행한 경우에 비해 온도 증가량이 작았으며, 아말감 하방의 잔존 상아질의 두께가 감소하면 온도 증가량이 더 커졌으나, 다른 세 종류의 수복재에서는 잔존 상아질의 두께에 따른 차이가 발생하지 않았다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.977-978
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• 2012

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.140-143
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• 2004

Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

• 한국기계가공학회지
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• 제13권1호
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• pp.121-128
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• 2014

Superfinishing is essential for mirror surfaces, because among mechanical components cylindrical workpieces such as spindles must maintain precision and reliability with respect to functional characteristics. However, research on standardization of polishing film application combination to obtain mirror surfaces is insufficient. Consequently, this has been a factor in rising costs of mechanical components. Therefore, in this study, experiments have been conducted to determine efficient polishing film application combination for mirror surfaces ranging from ductile materials such as SM45C, brass, aluminium 7075, and titanium to brittle materials such as $Al_20_3$, SiC, $Si_3N_4$, and $ZrO_2$. From the experimental results, efficient polishing film application combination for metallic materials and ceramic materials is confirmed.

• 한국염색가공학회지
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• 제20권4호
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• pp.15-20
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• 2008

The cotton yarn was subjected to bio-polishing treatment with three commercial enzymes(Cellusoft L, Denimax-991L and Denimax-acid) to remove the fuzz on the cotton yarn. Also, enzyme treated cotton yarns were compared with singeing cotton yarns. Experimental variables of enzyme treated cotton yarn were as follow: concentration of enzyme solution and NaOH, dipping time, and processing temperature. The enzymatic treatments were evaluated by analyzing the effect on yarn count, twist contraction, evenness and tenacity. As the results, enzymatic treatment on cotton yarn induced same effects as the traditional singeing treatment. Also, silket treatment of cotton yarn after bio-polishing enhanced the tensile properties of the cotton yarn.

• 한국정밀공학회지
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• 제22권2호
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• pp.38-45
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• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.

• 한국기계가공학회지
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• 제11권6호
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• pp.48-54
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• 2012

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1384-1385
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• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.