• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.1
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• pp.119-126
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• 2006

The finishing process of die requires the processing technique of a height efficiency and precision. Because the precision of die gives the quality of goods the influence directly. The hydro-static polishing device employs the hydro-static axis and is able to polish the structure of complex picture under the constant pressure and is got constant surface roughness at all polished plane. Therefore, In order to polish precision sculptured surface, it was used the hydro-static polishing device. Polishing device's polishing characteristic is estimated by polishing conditions which are size of abrasive, material of tools. And, because the surface quality of workpiece depends on polishing pattern which relates to motion of abrasive grain. The polishing characteristic according to polishing pattern was evaluated.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.1
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• pp.196-203
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• 2002

Generally, non-uniformity and removal rate are important factors on measurements of both wafer and die scale. In this study, we verify the effects of the pressure and relative velocity on the results of the chemical mechanical polishing and the effect of pattern density on inter layer dielectric chemical mechanical polishing of patterned wafer. We suggest an appropriate modeling equation, transformed from Preston\`s equations which was used in glass polishing, and simulate the removal rate of patterned wafer in chemical mechanical polishing. Results indicate that the pressure and relative velocity are dominant factors for the chemical mechanical polishing and pattern density effects on removal rate of pattern wafers in die scale. The modeling is well agreed to middle and low density structures of the die. Actually, the die used in Fab. was designed to have an appropriate density, therefore the modeling will be suitable for estimating the results of ILD CMP.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.221-224
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• 2002

Recently, simulation of Chemical Mechanical Polis hing is becoming more important because Process parameters on the material removal rate are complicated. And pattern-depent effects are a key concern in CMP processes. In this paper, we have been studied the changes of pattern density vs. oxide thickness with Stine's simulation model. We also have estimated the effective density using optimal window size with density mask, and have made a study of the change of oxide thickness as a function of polishing time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.715-718
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• 2004

In this paper, we studied the characteristics of new polishing pad, which can apply W-CMP process for global planarization of multi-level interconnection structure. The hardness and density were measured as a function of groove pattern. Also, we compared the pore size through the SEM photograph. Finally, we investigated the CMP characteristics with five different kind of groove pattern sample. Through the above results, we can select optimum groove pattern, so we can expect to begin home product of polishing pad.

• Design & Manufacturing
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• v.13 no.3
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• pp.12-18
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• 2019

Fluid jet polishing is a method of jetting a fluid to polish a concave or free-form surface. However, the fluid jet method is difficult to form a stable polishing spot because of the lack of concentration. In order to solve this problem, MR fluid jet polishing system using an abrasive mixed with an MR fluid whose viscosity changes according to the intensity of a magnetic field is under study. MR fluid jet polishing is not easy to formulate for precise optimal conditions and material removal due to numerous fluid compositions and process conditions. Therefore, in this paper, quantitative data on the factors that have significant influence on the machining conditions are presented using various simulations and the correlation studies are conducted. In order to verify applicability of the fabricated MR fluid jet polishing system by nozzle diameter, the flow pattern and velocity distribution of MR fluid and polishing slurry of MR fluid jet polishing were analyzed by flow analysis and shear stress due to magnetic field changes was analyzed. The MR fluid of the MR fluid jet polishing and the flow pattern and velocity distribution of the polishing slurry were analyzed according to the nozzle diameter and the effects of nozzle diameter on the polishing effect were discussed. The analysis showed that the maximum shear stress was 0.45 mm at the diameter of 0.5 mm, 0.73 mm at 1.0 mm, and 1.24 mm at 1.5 mm. The cross-sectional shape is symmetrical and smooth W-shape is generated, which is consistent with typical fluid spray polishing result. Therefore, it was confirmed that the high-quality surface polishing process can be stably performed using the developed system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1121-1124
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• 2001

In this study, we verify th effects of pattern density on interlayer dielectric chemical mechanical polishing process based on the analysis of Preston's equation and confirm this analysis by several experiments. Appropriate modeling equation, transformed form Preston's equations used in glass polishing, will be suggested and described the effects of this modeling during pattern wafer ILD CMP. Results indicate that the modeling is well agreed to middle density structure of the die in pattern wafer, but has some error in low and high density structure of the die. Actually, the die used in Fab, was designed to have a appropriate density, therefore this modeling will be suitable for estimating the results of ILD CMP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.140-143
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• 2004

Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.2
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• pp.38-45
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• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.3
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• pp.42-49
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• 2003

In this paper, we provide the results of polishing temperature distribution by way of infrared ray measurement system as well as polishing resistance, which can be interpreted as tribological aspects of CMP, using force measurement system. The results include the trend of polishing temperature, its distribution profile and temperature change during polishing. The results indicate that temperature affects greatly to the removal rate. Polishing temperature increases gradually and reaches steady state temperature and the period of temperature change occurs first tens of seconds. Furthermore, the friction force also varies as the same pattern with polishing temperature from high friction to low. These results suggest that the first period of the whole polishing time greatly affects the nonuniformity of removal rate.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.445-446
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• 2002

The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, th ε groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.