• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

• 한국표면공학회지
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• 제42권4호
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• pp.161-168
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• 2009

Effects of TiN/Ti multilayer coating on the Ti-30Ta-xZr alloy surface were studied by using various experiments. The Ti-30Ta containing Zr (5, 10 and 15 wt%) were melted 10 times to improve chemical homogeneity by using a vacuum furnace. And then samples were homogenized for 24 hrs at $1000^{\circ}C$. The specimens were prepared for TiN/Ti coating by cutting and polishing. The prepared specimens were coated with TiN/Ti multilayers by using DC magnetron sputtering method. The analyses of coated surface and coated layer were carried out by field emission scanning electron microscope(FE-SEM), EDX, and X-ray diffractometer(XRD). From the microstructure and XRD analysis of Ti-30Ta-xZr alloys, The equiaxed structure was changed to needle-like structure with increasing Zr content. And $\alpha$-peak and elastic modulus increased as Zr content increased. The $\alpha$ and $\beta$ phase predominantly were found in the specimen containing high Zr content. According to the analysis of TiN/Ti coating layer, the surface defects and structures of Ti-30Ta-xZr were covered with TiN/Ti coating layer and surface roughness decreased.

• Restorative Dentistry and Endodontics
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• 제41권2호
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• pp.106-113
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• 2016

Objectives: This study evaluated the effects of different surface conditioning methods on the bond strength of orthodontic brackets to glazed full-zirconia surfaces. Materials and Methods: Glazed zirconia (except for the control, Zirkonzahn Prettau) disc surfaces were pre-treated: PO (control), polishing; BR, bur roughening; PP, cleaning with a prophy cup and pumice; HF, hydrofluoric acid etching; AA, air abrasion with aluminum oxide; CJ, CoJet-Sand. The surfaces were examined using profilometry, scanning electron microscopy, and electron dispersive spectroscopy. A zirconia primer (Z-Prime Plus, Z) or a silane primer (Monobond-S, S) was then applied to the surfaces, yielding 7 groups (PO-Z, BR-Z, PP-S, HF-S, AA-S, AA-Z, and CJ-S). Metal bracket-bonded specimens were stored in water for 24 hr at $37^{\circ}C$, and thermocycled for 1,000 cycles. Their bond strengths were measured using the wire loop method (n = 10). Results: Except for BR, the surface pre-treatments failed to expose the zirconia substructure. A significant difference in bond strengths was found between AA-Z ($4.60{\pm}1.08MPa$) and all other groups ($13.38{\pm}2.57-15.78{\pm}2.39MPa$, p < 0.05). For AA-Z, most of the adhesive remained on the bracket. Conclusions: For bracket bonding to glazed zirconia, a simple application of silane to the cleaned surface is recommended. A zirconia primer should be used only when the zirconia substructure is definitely exposed.

• 한국재료학회지
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• 제16권12호
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• 한국정보통신학회논문지
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• 제11권7호
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• pp.1359-1366
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• 2007

최근 광통신 용량은 VoIP, AUdio/Video 스트리밍의 멀티미디어 서비스 수요로 인한 정보통신 용량의 증가에 비례하여 증가하고 있다. 초고속 광통신망에서 추가적인 광섬유망과 고속장비 없이 이를 해결하기 위한 방법으로 DWDM(Dense Wavelength Division Multiplexing) 기법이 대두되고 있다. 따라서, 본 논문에서는 이러한 기능을 갖는 광필터를 설계하기 위하여 광섬유 한쪽의 클래드를 연마하여 다층 슬래브 도파로에 결합시킨 형태의 광섬유/다층 슬래브 결합구조의 광필터를 제안하였다. 제안된 광필터는 $1.5{\mu}m$ 통신창에서 분리간격이 $4.15{\mu}m$일 때 65nm의 편광 독립성, TM 모드와 TE 모드에 대해 중심파장이 각각 ${\lambda}_0=1.54946\;{\mu}m$와 ${\lambda}_0=1.6144\;{\mu}m$일 때 0.1 nm의 FWHM(Full Width at Half Maximun) 특성을 가진다.

• 한국추진공학회지
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• 제14권4호
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• pp.39-45
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• 2010

자주포 또는 원자로와 같은 두꺼운 실린더는 압력용기 내부에 유익한 잔류 압축응력을 유도하여 작용압력과 피로수명을 증가시키도록 자긴 가공되고 있다. 자긴가공도가 증가하면 구멍에서 압축잔류응력의 크기도 증가한다. 본연구의 목적은 ASME 코드에 의해 적용된 Kendall 모델을 이용하여 고강도 SCM440 강의 정확한 잔류응력을 예측하는 것이다. SCM440 후육실린더의 내부에 유압이 적용되고 30% 변형률까지 자긴 가공하였다. 자긴가공된 시편은 전해연마하고 X-ray 회절법을 이용하여 정확한 잔류응력을 산출하도록 하였다. 그리고 주사전자현미경을 이용하여 자긴가공에 의해 소성변형된 표면층을 분석하였다. 측정한 잔류응력과 계산된 결과를 비교하여 약간의 차이는 있으나 비교적 서로 잘 일치하고 있다.

• 한국결정성장학회지
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• 제31권2호
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• pp.63-68
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• 2021

본 연구에서는 NbC 코팅된 도가니가 SiC 단결정 품질에 미치는 영향을 조사하였다. 실험은 흑연 도가니와 NbC 코팅된 도가니를 사용하였으며, 두 실험의 결과를 체계적으로 비교 분석하였다. SiC 결정 성장은 Ar 분위기에서 2300℃ 이상의 온도와 5 Torr의 압력조건에서 PVT 법을 사용하여 진행하였다. 성장된 SiC 결정은 양면 그라인딩과 연마 가공 후 Raman 분석을 통해 결정상 분석, HR-XRD 분석으로 결정성을 분석하였다. 또한 KOH 에칭 후 광학현미경 분석과 SIMS 분석으로 결함 밀도 및 불순물 농도를 분석하여 두 웨이퍼의 품질을 비교하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• 대한치과보철학회지
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• 제38권5호
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• pp.595-605
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• 2000

Dental ceramics have good aesthetics, biocompatibility, low thermal conductivity, abrasion resistance, and color stability. However poor resistance to fracture and shrinkage during firing process have been limiting factors in their use, particularly in multiunit ceramic restorations. A new method for making all-ceramic crowns that have high strength and low processing shrinkage has been developed and is referred to as the Vita In-Ceram method. This study was performed to investigate the effect of $CeO_2$ addition in borosilicate glasses on the strength of alumina-glass composites. Porous alumina compacts were prepared by slip casting and sintered at $1,100^{\circ}C$ for 2 hours. Dense composites were made by infiltration of molten glass into partially sintered alumina at $1,140^{\circ}C$ for 4 hours. Specimens were polished sequentially from #800 to #2000 diamond disk. and the final surface finishing on the tensile side was received an additional polishing sequence through $1{\mu}m$ diamond paste. Biaxial flexure test was conducted by using ball-on-three-ball method at a crosshead speed of 0.5mm/min. To examine the microstructural aspect of crack propagation in the alumina-glass composites, Vickers-produced indentation crack was made on the tensile surface at a load of 98.0 N and dwell time of 15 sec, and the radial crack patterns were examined by an optical microscope and a scanning electron microscope. The results obtained were summarized as follows; 1. The porosity rates of partially sintered alumina decreased with the rising of firing temperature. 2. The maximum biaxial flexure strength of 423.5MPa in alumina-glass composites was obtained with an addition of 3 mol% $CeO_2$ in glass composition and strength values showed the aspect of decrease with the increase of $CeO_2$ content. 3 The biaxial flexure strength values of alumina-glass composites were decreased with rising the firing temperature. 4. Observation of the fracture surfaces of alumina-glass composites indicated that the enhancement of strength in alumina-glass composites was due to the frictional or geometrical inter-locking of rough fracture surfaces and ligamentary bridging by intact islands of materials left behind the fracture front.