• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.433-434
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• 2002

Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the 'soft' pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.2
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• pp.148-153
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• 2013

This study demonstrates a novel hybrid surface polishing process combining non-traditional electrochemical polishing(ECP) with external artificial ultrasonic vibration. ECP, typical noncontact surface polishing process, has been used to improve surface quality without leaving any mechanical scratch marks formed by previous mechanical processes, which can polish work material by electrochemical dissolution between two electrodes surfaces. This research suggests vibration electrochemical polishing(VECP) assisted by ultrasonic vibration for enhancing electrochemical reaction and surface quality compared to the conventional ECP. The localized roughness of work material is measured by atomic force microscopy(AFM) for detailed information on surface. Besides roughness, overall surface quality, material removal rate(MRR), and productivity etc. are compared with conventional ECP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.414-422
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• 2005

This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.

• The Journal of Korean Academy of Prosthodontics
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• v.35 no.4
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• pp.719-741
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• 1997

This study was undertaken to compare by Atomic Force Microscope the effects of various finishing and polishing instruments on surface roughness of filling and veneering composite resins. Seven composite resins were studied : Silux Plus (3M Dental Products, U.S.A.), Charisma (Heraeus Kulzer, Germany), Prisma THP (L.D.Caulk, Dentsply, U.S.A.), Photoclearfil (Kuraray, Japan), Cesead (Kuraray, Japan), Thermoresin LC (GC, Japan), Artglass (Heraeus Kulzer, Germany). Samples were placed and polymerized in holes (2mm thick and 8.5mm in diameter) machined in Teflon mold under glass plate, ensuring excess of material and moulded to shape with polyester matrix strip. Except control group (Polyester matrix strip), all experimental groups were finished and polishied under manufacturer's instructions. The finishing and polishing procedure were : carbide bur (E.T carbide set 4159, Komet, Germany), diamond bur (composite resin polishing bur set, GC, Japan), aluminum-oxide disc (Sof-Lex Pop-On, 3M Dental Products, U.S.A.), diamond-particle disc (Dia-Finish, Renfert Germany), white stone bur & rubber point( composite finishing kit, EDENTA, Swiss), respectively. Each specimens were evaluated for the surface roughness with Atomic Force Microscope (AutoProbe CP, Park Scientific Instruments, U.S.A.) under contact mode and constant height mode. The results as follows : 1. Except Thermoresin LC, all experimental composite resin groups showed more rougher than control group after finishing and polishing(p<0.1). 2. A surface as smooth as control group was obtained by $Al_{2}O_{3}$ disc all filling composite resin groups except Charisma and all veneering composite resin groups except Thermoresin LC(p<0.05). 3. In case of Thermoresin LC, there were no statistically significant differences before and after finishing and polishing(p>0.1). 4. Carbide bur, diamond bur showed rough surfaces in all composite resin groups, so these were inappropriate for the final polishing instruments.

• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1308-1311
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• 2004

It is very important that get polishing characteristic that to be stable that accomplish planarization of high efficiency in chemical mechanical polishing, and there is repeatability Groove of pad causes much effects in flow of slurry among various factors that influence in polishing characteristic, is expected to cause change of lubrication state and polishing characteristic in contact between wafer and pad. Therefore, divided factors of pad groove by groove pattern, groove profile, groove dimensions. This research wishes to study effect that dimension of pad groove gets in polishing performance. When changed dimension (width, depth, pitch of groove) of groove, measured change of removal rate and friction force. According as groove dimension changes, could confirm that removal rate and friction force change. While result of this experiment studies effect of pad groove in CMP, it is expected to become small help.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1312-1315
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• 2004

Chemical Mechanical Polishing is referred to as a three body tribological system, because it includes two solids in relative motion and the slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason of not only the friction force but also material removal during polishing. The friction force generated by the abrasives was inspected with the change of abrasive size and concentration in this paper. The variation of coefficient of friction with abrasive concentration and size could result from the condition of contact and load balance between wafer and abrasives carried by pad asperity. The simulation was performed in this paper and compared with the result of experiment. The material removal rate also estimated with abrasive concentration and size increasement.

• Tribology and Lubricants
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• v.33 no.6
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• pp.282-287
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• 2017

SU-8 is an epoxy-type photoresist widely used for the fabrication of high-aspect-ratio (HAR) micro-structures in micro-electro-mechanical systems (MEMS). To fabricate highly integrated structures, chemical mechanical polishing (CMP) has emerged as the preferred manufacturing process for planarizing the MEMS structure. In SU-8 CMP, an oxidizer decomposes organic impurities and particles in the CMP slurry remove the chemically reacted surface of SU-8. To fabricate HAR microstructures using the CMP process, the adhesion between SU-8 and substrate material is important to avoid the delamination of the SU-8 film caused by the mechanical-dominant material removal characteristic. In this study, the friction force during the CMP process is measured with a CMP monitoring system to detect the delamination phenomenon and investigate the delamination of the SU-8 film from the silicon substrate under various pressure conditions. The increase in applied pressure causes an increase in the frictional force and wafer-edge stress concentration. The frictional force measurement shows that the friction force changes according to the delamination phenomenon of the SU-8 film, and that it is possible to monitor the delamination phenomenon during the SU-8 CMP process. The delamination at a high applied pressure is explained by the effect of stress distribution and pad deformation. Consequently, it is necessary to control the pressure of polishing, which can avoid the delamination in SU-8 CMP.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.4
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• pp.401-407
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• 2011

The conventional method of magnetic abrasive polishing is not suitable for non-magnetic materials because such polishing is basically possible when magnetic force exists and the magnetic force in non-magnetic materials is very low. The installation of an electromagnet under the working area of a non-magnetic material, which is called second-generation magnetic abrasive polishing in this study, can enhance the magnetic force. Experimental evaluation and optimization of process parameters for polishing magnesium alloy steel was performed by adopting the design of experiments and the response surface method. The results indicated that the intensity of the magnetic force and spindle speed are significant parameters that affect the improvement of surface roughness. A prediction model for the surface roughness of the magnesium alloy steel is developed using the second-order response surface method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.747-748
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• 2007