• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.711-714
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• 2004

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1283-1288
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• 2003

The friction heat generated by the CMP process hasinfluence on removal rate and WIWNU(Within Wafer Non-Uniformity). Therefore, the object of this study is to find the distribution of temperature on pad surface during CMP process. To do this, the authors analyse the kinematics of CMP equipment to verify the sources of friction heat and compare the analysis result with the experimental results. Through the analysis and experiment conducted in this paper, we can predict the distribution of polishing temperature across the pad surface. Furthermore the result could help to predict the process conditions which could enhance the polishing results, such as WIWNU and removal rate of thin film to achieve more efficient process.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.25-31
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• 2019

In this study, a new adhesion evaluating equipment and data processing methods were developed to overcome some limitations of existing evaluating equipment. Nano-diamond coated tool is a specimen of experiment. When applying frictional force and shear force on the specimen by a rotating polishing pad, delamination occurs at a moment. During each experiment, the vibration, load, and torque is obtained by accelerometer, loadcell and torque s+ kpensor. Frictional force and coefficient of friction are obtained by calculating torque and load. Based on FFT transformation, acceleration is processed and analyzed. As a result, the moment of delamination and the load at that time can be detected by the new developed equipment and measurement system. Finally, we call this load as an Adhesion force.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.116-119
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• 2003

본 연구에서는 LCD 공정에 사용되는 ball spacer를 전해 연마(Electro-Polishing, EP) 처리된 스테인리스(stainless)관 내부에서 마찰대전으로 하전시켜 하전량을 측정하는 하전 메커니즘과 하전 특성을 관찰하였다. Ball spacer의 농도를 일정하게 하고, 유입하는 공기의 유량을 201pm, 301pm으로 변화시키면서 실험하였다. 유입되는 공기의 유량은 일정하게 하여 ball spacer의 농도를 분진공급장치(dust feeder)를 통해 변화시키면서 하전수를 측정하였다. 이 때 측정결과는 EP 처리된 스테인리스관에 유입되는 공기의 유량이 증가했을 때, 하전이 더 많이 되는 것을 보여주었다. 또한 일정한 공기의 유량에서 주입되는 ball spacer의 농도가 증가했을 때 입자당 하전수가 증가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.939-945
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• 2002

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing (CMP) process in 0.18 $\mu\textrm{m}$ semiconductor device. However, it still has various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. In this paper, we studied the DOE (design of experiment) method in order to get the optimized CMP equipment variables. Various process parameters, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal CMP process parameters.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.42 no.3
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• pp.89-94
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• 2019

K1A1 tank commander's primary thermal sight is a device that enables tank commanders to detect, identify, aim and track the target by observing targets in all directions during day, night and in situations of smokescreen and fog through $360^{\circ}$ rotation independent from the gunner's primary thermal sight and stabilizing the line of sight even under the vibrations occurring when the tank is standstill and moving. The main function of this device is to detect and process visible and thermal images and deliver the final images to the tank commander. One of the core parts to that end is the observation window (daytime/thermal image window). This core part is mounted at the entrance of the optical path for observing the target and plays the role of making visible light during the daytime and infrared light during the night pass through the target and transmitting the resultant images to the internal optical system of the tank commander's primary thermal sight. Such core parts have been selected as depot maintenance items so that they are replaced by new parts instead of being recycled when they are subjected to maintenance in most cases. That is, the military budget is wasted because such parts are replaced by new parts despite that they can be recycled for maintenance. Therefore, this study proposed a mounting tool for polishing and coating observation windows (daytime and thermal image window) using planar polishing equipment and DLC (Diamond-Like Carbon) coating equipment. In addition, this study presented an amendment (proposal) of the Depot Maintenance Work Request (DMWR) already published to verify the performance of recycled products including the establishment of inspection standards for recycling processes.

• Journal of Power System Engineering
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• v.14 no.1
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• pp.22-26
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• 2010

Generally, it is a method to remove the fouling cleaning the plate heat exchanger with chemicals or polishing with a brush or cloth after stopping the equipment and disassembling heat exchanger. However, the equipment must be stopped and taken apart when using this method, which causes an unnecessary work to assemble again after cleaning it. In this study, it has developed and tested the equipment which can automatically clean the fouling on plate heat exchanger at regular intervals with air bubbles. It indicated that the overall heat transfer coefficient had decreased without significant differences similar to that calculated without air bubbles until after 72 hours when making air bubbles to remove fouling ingredient on the surface of heat transfer area every 10 minutes per 2 hours. However, it showed that there was a 10% higher of heat transfer effect compared to the case without air bubbles of after 192 hours.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.213-217
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.