• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator, removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistency. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfect Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• Journal of Pharmaceutical Investigation
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• 제6권1호
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• pp.26-32
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• 1976

Dicalcium phosphate dihydrate (DCPD) is the most widely-used dentifrice abrasive in non-therapeutic tooth-paste requiring, low abrasive level, high stability and excellent compatibility with other formulation ingredients. One of the difficulties encountered in the use of this material in tooth-paste is that unless storage of the product is maintained at a relative low temperature there is a distinct tendency to lose water of crystallization. Another difficulty which has been encountered is that there is a tendency for the product to become lumpy. Various means have been proposed for increasing the stability and overcoming the lumping tendency, most of which means comprise the addition of stabilizing agent. But there is not any report about the relationships between the mechanism of dehydration, physical properties, structure and manufacturing condition. In this experiment, DCPD were manufactured by methods of Moss' patent, its two varied and J.P.VIII, these were studied by means of stability test, IR spectra, and DTA. According to the manufacturing conditions, DCPD has different physical properties and structures, i. e., monoclinic system of low drying temperature, triclinic system of high drying temperature. Dehydration of DCPD may be supposed one step debydration at about $100^{\circ}$ and it finaly converts to ${\gamma}-pyrophosphate$ at about $465^{\circ}$ and if the drying temperature is high it becomes DCP anhydrous. DCPD made by Moss' patent is thought of the best polishing agent of tooth-paste.

• 한국재료학회지
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• 제16권12호
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• 패션비즈니스
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• 제7권5호
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• pp.108-118
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• 2003

Surface properties, including the texture and the luster, of cotton fibers and yarns thereof play an important role in textile technology. The convolutions and the cross-sectional shape of the cotton fiber affect the fabric texture and the luster accordingly. Mercerization of the cotton fabric affects the luster, strength, and other properties of the fabric. In this study, the effect of mercerization was examined on the luster of the cotton fabric, together with the effect of polishing treatment. One of the traditional methods determining the fabric luster is the use of glossmeter or goniometric glossmeter. The use of glossmeter gives successful results in determining the gloss of rather flat and continuous surface such as plastic sheet, painted surface, or paper products. Since the textile fabrics have diverse surface structures and textures, these could be regarded as having three-dimensional surface. Such complexity imposes some difficulties for differentiating subtle surface luster properties of diverse textile fabrics. The advancement in the area of imaging technologies has enabled the micro-scale analysis of the surface textures and the fabric luster recently. Using a CCD camera, the surface luster images were taken at various incident illumination conditions. Microscale analysis, including the blob analysis, of the images could differentiate the subtle luster properties present in a group of cotton fabric samples comprising mercerized cotton fabric, non-mercerized cotton fabric, polished cotton fabric, and a 'standard' cotton fabric. The glossmeter measurement gave satisfactory but limited differentiation among the samples, whose luster differences are easily recognizable with visual observation, except for the mercerized cotton fabric sample and the non-mercerized cotton fabric. The microscale analysis of the fabric luster could, therefore, help understand the nature of diverse textile fabric luster.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• 한국건축시공학회지
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• 제24권1호
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• pp.77-86
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• 2024

본 연구에서는 폴리우레아 도막방수재의 시공 시차별 분석과 열화면에 대한 유지관리 시공 타입별 분석을 통해 시공 이음부위의 적정 시공 방안을 제시하고자 전체 16가지 조건을 대상으로 시공 이음부위에 대한 평가를 진행하였다. 결과 분석을 통해 시공시차가 길어지면 길어질수록 이음부를 통한 누수발생률은 증가하는 것으로 분석되었고, 프라이머 시공을 통해 누수 예방이 가능한 것으로 확인되었다. 또한 장시간 옥외 노출된 폴리우레아는 표면이 열화되어 약해진 상태이기 때문에 해당 부위를 연마할 경우 표면손상이 확대되어 계면 형성에 영향을 미치는 것으로 분석되어, 유지관리 시공 시에는 프라이머를 도포하고 시공하는 것이 바람직하겠으며, 동일한 우레아 계열의 재료를 시공하는 것이 방수 안정성을 확보할 수 있을 것으로 판단된다.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.45-50
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• 2014

반도체 미세구리배선 적용을 위하여 구리배선의 습식 표면처리 및 열 사이클에 따른 구리 박막과 실리콘질화막 도포층 사이의 계면접착에너지를 4점굽힘시험을 통해 정량적으로 평가하였다. 구리배선을 화학적 기계적 연마한 후 습식 표면처리를 통하여 구리 박막과 실리콘질화막의 계면접착에너지는 $10.57J/m^2$에서 $14.87J/m^2$로 증가하였다. $-45{\sim}175^{\circ}C$범위에서 250사이클 후, 표면처리를 하지 않은 시편의 계면접착에너지는 $5.64J/m^2$으로, 표면처리를 한 시편은 $7.34J/m^2$으로 감소하였으며, 모든 시편의 박리계면은 구리 박막과 실리콘질화막 계면으로 확인되었다. X-선 광전자 분광법으로 계면 결합 상태를 분석한 결과, 화학적 기계적 연마 공정 후 구리배선의 표면 산화물이 습식표면처리에 의해 효과적으로 제거된 것을 확인하였다. 또한, 열 사이클 처리동안, 구리 박막과 실리콘질화막의 큰 열 팽창 계수 차이로 인한 열응력으로 인하여 구리 박막과 실리콘질화막 계면이 취약해지고, 계면을 통한 산소유입에 따른 구리 산화층이 증가하여 계면접착에너지가 저하된 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• 대한치과보철학회지
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• 제44권6호
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• pp.683-689
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• 2006

Statement of problem. Interfacial toughness is important in the mechanical property of layered dental ceramics such as core-veneered all-ceramic dental materials. The interfaces between adjacent layers must be strongly bonded to prevent delamination, however the weak interface makes delamination by the growth of lateral cracks along the interface. Purpose. The purpose of this study was to determine the effect of the reaction layer on the interfacial fracture toughness of the core/veneer structure according to the five different divesting. Materials and methods. Thirty five heat-pressed Lithia-based ceramic core bars (IPS Empress 2), $20mm{\times}3mm{\times}2mm$ were made following the five different surface divesting conditions. G1 was no dissolution or sandblasting of the interaction layer. G2 and G3 were dissolved layer with 0.2% HF in an ultrasonic unit for 15min and 30 min. G4 and G5 were dissolved layer for 15min and 30min and then same sandblasting for 60s each. We veneered bilayered ceramic bars, $20mm{\times}2.8mm{\times}3.8mm$(2mm core and 1.8mm veneer), according to the manufacturer's instruction. After polishing the specimens through $1{\mu}m$ alumina, we induced five cracks for each of five groups within the veneer close to interface under an applied indenter load of 19.6N with a Vickers microhardness indenter. Results. The results from Vickers hardness were the percentage of delamination G1:55%, G2:50%, G3:35%, G4:0% and G5:0%. SEM examination showed that the mean thickness of the reaction layer were G1 $93.5{\pm}20.6{\mu}m$, G2 $69.9{\pm}14.3{\mu}m$, G3 $59.2{\pm}20.2{\mu}m$, G4 $0.61{\pm}1.44{\mu}m$ G5 $0{\pm}0{\mu}m$. The mean interfacial delamination crack lengths were G1 $131{\pm}54.5{\mu}m$, G2 $85.2{\pm}51.3{\mu}m$, and G3 $94.9{\pm}81.8{\mu}m$. One-way ANOVA showed that there was no statistically significant difference in interfacial crack length among G1, G2 and G3(p> 0.05). Conclusion. The investment reaction layer played important role at the interfacial toughness of body ceramic bonded to Lithia-based ceramic.

• 대한치과보철학회지
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• 제28권2호
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• pp.29-51
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• 1990

This study was designed to compre the tensile bond strength of 4-META containging denture base resin to Co-Cr alloys after various surface treatments. Especially the surface treatment of sandblasting the mental with aluminum oxide and treating in oxidizing solution composed of 3% aqueous sulfuric acid with 1% potassium manganate were compared. Effect of surface roughness on bonding was measured after sandblasting with 50um, 300um aluminun oxide and polishing with emery pater. Also the effects of wax and wax solvent on bonding were observed. According to the type of polymerization process, heat-cured Meta-Dent resin and autopolymerizing Meta-Fast resin were used. For some specimnens, the tensile bond strength were measured agter three pre-conditions : 1day after bonding, immersed in water at $75^{\circ}C{\pm}3^{\circ}C$ for 4weeks, under normal ambient condition for 4weeks. The following results were obtained from this study : 1. The bond strengths of resins containing 4-META were significantly higher than those of conventional denture base resins(p<0.05). 2. Autopolymerizing Meta-Fast resin had higher bond strength than heat-cured Meta-Dent, resin(p<0.05). 3. The bond strengths of Biosil and Nobilium to 4-META containging resins were not significally different(p>0.05). 4. Stable adhesion can be achieved when mechanically roughen the metal surface by snadblasting with $50{\mu}m$ aluminum oxide than treating in an oxidizing soluing with potassium manganate(p<0.05). 5. Once the metal surface is contaminated with wax, the bond srtength decreased greatly in spite of wax wash with boiling water. But the bond strength recovered significantly with the use of wax solvent 6. Meta-Dent resin had higher bond strength when roughen the metal surface with $50{\mu}m$ aluminum oxide than with $300{\mu}m$ aluminum oxide(p<0.05). In case of Meta-Fast, resin, the use of $300{\mu}m$aluminum oxide was a little advantageous of bonding, but was statistically insignificant(p>0.05).