• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.485-485
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• 2009

Double side polishing process has been used for various industrial applications, such as polishing of semiconductor substrates and flat panel display glasses. In wafer manufacturing, double side polishing process is applied to improve wafer flatness and to minimize particle generation from wafers in device manufacturing processes, which is recognized as one of the most important processes. Whereas the kinematical modeling and analysis results of single side polishing, extensively used for chemical-mechanical polishing (CMP) in device manufacturing, are well investigated, the studies in conjunction with double side polishing are barely carried out, due to the complication of polishing system and the uncertainty of wafer motion in the carrier. This paper suggests the derivation of kinematical model with consideration of carrier and wafer motion in double side polishing, and then presents the effect of kinematical parameters on material removal amount and its non-uniformity. The kinematical analysis results help to understand the double side polishing process and to control the polishing results.

• 제어로봇시스템학회:학술대회논문집
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• 1997.10a
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• pp.1275-1278
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• 1997

Cutting process has been automated by progress of CNC and CAD/CAM, but polishing process has been depended on only experiential knowledge of expert. To automate the polishing pricess polishing robot with 2 degrees of freedom which is attached to a machining center with 3 degrees of freedom has been developed. this automatic polishing robot is able to keep the polishing tool normal on the curved surface of die to improve a performance of polishing. Polishing task for a curved surface die demands repetitive operation and high precision, but conventional control algorithm can not cope with the problem of disturbance such as a change of load. In this research, we develop robust controller using real time sliding mode algorithm. To obtain gain parameters of sliding model control input, the signal compression method is used to identify polishing robot system. To obtain an effect of 5 degrees of freedom motion, 5 axes NC data for polishing are divided into data of two types for 3 axis machining center and 2 axis polishing are divided into data of two types for 3 axis machining center and 2 axis polishing robot. To find an efficient polishing condition to obtain high quality, various experiments are carried out.

• Journal of Digital Contents Society
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• v.3 no.1
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• pp.113-122
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• 2002

The flatness of a silicon wafer concerned with ULSI chip is one of the most critical parameters ensuring high yield of wafers. The polishing process that measures and controls the flatness of a silicon wafer is one of the important process in various processes for production silicon wafer, which are still being done today by manual. But engineers in polishing process are requested to have many experiences and to check silicon wafers one by one. In this paper, we propose an algorithm used interpolation that estimates wafer's shape and sorts wafers automatically, then we can control the flatness of wafers in polishing process by automatic system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.24-28
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• 1996

Mirror-like polishing system of hemisphericall high-speed precision bearing for digital VTR drum was developed. Mechamism of the polishing process was analyzed in the view point of polishing contact range and contact length between the tool and the workpiece surface. It was suggested that the two stage polishing process adoptiong the diamond grinding wheel and polishing tool instead of multistage lapping processes, which enables the mass production of the bearing by reduction of polishing time.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1253-1258
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• 2013

Ceramic particles as polishing abrasives are often used in a magnetic abrasive polishing process because they have strong wear resistance. Non-ferromagnetic ceramic abrasives should be mixed with ferromagnetic iron particles for controlling the mixture within a magnetic brush during the polishing process. This study describes the application of the ceramic particles for the magnetic abrasive polishing. The distribution of the magnetic abrasives attached on a tool varies with magnetic flux density and tool rotational speed. From the correlation between abrasive adhesion ratio in the tool and surface roughness produced on a workpiece, practical polishing conditions can be determined. A step-over for polishing a large sized workpiece is able to be selected by a S curve, and an ultrasonic vibration assisted MAP produces a better surface roughness and increases a polishing efficiency.

• Tribology and Lubricants
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• v.34 no.3
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• pp.115-122
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• 2018

Chemical mechanical polishing (CMP) is a hybrid processing method in which the surface of a wafer is planarized by chemical and mechanical material removal. Since mechanical material removal in CMP is caused by the rolling or sliding of abrasive particles, interfacial friction during processing greatly influences the CMP results. In this paper, the trend of tribology research on CMP process is discussed. First, various friction force monitoring methods are introduced, and three elements in the CMP tribo-system are defined based on the material removal mechanism of the CMP process. Tribological studies on the CMP process include studies of interfacial friction due to changes in consumables such as slurry and polishing pad, modeling of material removal rate using contact mechanics, and stick-slip friction and scratches. The real area of contact (RCA) between the polishing pad and wafer also has a significant influence on the polishing result in the CMP process, and many researchers have studied RCA control and prediction. Despite the fact that the CMP process is a hybrid process using chemical reactions and mechanical material removal, tribological studies to date have yet to clarify the effects of chemical reactions on interfacial friction. In addition, it is necessary to clarify the relationship between the interface friction phenomenon and physical surface defects in CMP, and the cause of their occurrence.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1027-1033
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• 2007

In this research, the polishing pad for W CMP has been analyzed to understand stabilization of polishing performance. For stabilization of process, the polishing pad condition is one of important factors. The polishing pad plays a key role in polishing process, because it contact with reacted surface of wafer[1]. The physical property of pad surface is ruled by conditioning tool which makes roughness and profile of pad surface. Pad surface affects on polishing performance such as RR(Removal Rate) and uniformity in CMP. The stabilized pad surface has stable roughness. And its surface has high level of wettability which can increase the probability of abrasive adhesion on pad. The result of this research is that the reduction of break-in and dummy polishing process were achieved by artificial machining to make stable pad surface. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied. Because, this type of pad is the most conventional type.

• Tribology and Lubricants
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• v.32 no.2
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.311-315
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• 2001

This paper presents the result of basic study about corrective polishing for arbitrary surface figure. In this study, we researched polishing characteristics on the working condition of optical glass. The abrasive size, relative velocity and working pressure were selected major factors that affect polishing process. The Preston's equation which is the representative model of polishing process was used to model the unit removal shape. The Preston's coefficient and unit removal function were calculated from the polished surface. Applying these results, we have shown that the systematic corrective polishing of arbitary figure is feasible through experiments and analysis.

• Journal of the Korean Society for Precision Engineering
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• v.8 no.4
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• pp.84-94
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• 1991

In order to achieve high accuracy of teaching and increase productivity using industrial robots in polishing process of dies, an off-line task programming system was developed on IBM-PC/386 under WINDOWS 3.0 operating system. The internal structure and the machematical basis of CAMPoli are described. Surface modeling technique of polishing dies with sculptured surfaces is introduced by poing data interpolation methodology through the use of CL-data transmitted from conventional CAM system. Tool selection, polishing speed, polishing pressure and kinds of tool motions can be determined and selected by user specified polishing variables. Task creation and verification of polishing path via computer graphics simulation of polishing tool can be done by the menu- driven function of CAMPoli system. Post-processing module is attached to generate robot language. Some simulation results are provided as verification means of the system.