• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2008년도 추계학술대회 논문집
• /
• pp.89-90
• /
• 2008

• 한국정밀공학회지
• /
• 제19권2호
• /
• pp.49-57
• /
• 2002

The effect of mechanical parameters on chemical mechanical polishing (CMP) of blanket and patterned aluminum thin films are investigated. CMP process experiments are conducted using the soft pad and the slurry mainly composed of acid solution and A1$_2$O$_3$ abrasive. The result for the blanket film showed that as the concentration of abrasive in slurry is increased, the surface roughness gets worse but the waviness gets better. The planarity of the patterned Al films is slowly improved by CMP when the width of and gap between the patterns are relatively small. It is tried to find the optimized CMP process conditions by that the patterned Al thin film can be planarized with fine surface. The most satisfiable film surface is obtained when the applied pressure is low (10kPa) and the abrasive concentration is relatively high (5wt%).

• 한국전기전자재료학회논문지
• /
• 제18권4호
• /
• pp.303-308
• /
• 2005

In this paper, the effects of oxidants on tungsten chemical mechanical polishing (CMP) process were investigated using three different oxidizers such as Fe(NO₃)₃, KIO₃ and H₂O₂. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization measurement with three different oxidizers, in order to compare the effects of W-CMP and electrochemical characteristics on the tungsten film as a function of oxidizer. As an experimental result, the tungsten removal rate reached a maximum at 5 wt％ Fe(NO₃)₃concentration, and when 5 wt％ H₂O₂was added in the slurry, the removal rate of W increased. Also, the microstructures of surface layer by atomic force microscopy(AFM) image were greatly influenced by the slurry chemical composition of oxidizers. It was shown that the surface roughness and removal rate of the polished surface were improved in Fe(NO₃)₃than KIO₃. The electrochemical results indicate that the corrosion current density of the 5 wt％ H₂O₂ and 5 wt％ H₂O/sub 2+/＋ 5 wt％ Fe(NO₃)₃was higher than the other oxidizers. Therefore, we conclude that the W-CMP characteristics are strongly dependent on the kinds of oxidizers and the amounts of oxidizer additive.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.66-66
• /
• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2008년도 춘계학술대회 논문집
• /
• pp.389-390
• /
• 2008

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 하계학술대회 논문집 C
• /
• pp.1600-1604
• /
• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 2002년도 학술대회논문집
• /
• pp.207-211
• /
• 2002

Anodizing film was prepared by anodic oxidation of pure aluminum(purity > 99.50) using DC power supply for constant current mode in an electrolytic solution of surface of sulfuric acid. Effects of pre-treatment process such as chemical polishing, acid cleaning, alkali etching before anodic oxidation, were studied to microstructures and surface morphologies. A roughness on surface of anodizing film had to be decreased for amorphous phase by anodic oxidation. A roughness on surface of anodizing film decrease as annealing temperature increased in chemical polishing.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.93-96
• /
• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.148-150
• /
• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of de-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.352-353
• /
• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of do-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.