• 동력기계공학회지
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• 제2권3호
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• pp.21-26
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• 1998

Numerical simulations for various fluid flows require enormous computing time during iterations. In order to solve this problem, several techniques have been proposed. A SOR method is one of the effective methods for solving elliptic equations. However, it is very difficult to find the optimum relaxation factor, the value of this factor for practical problems used to be estimated on the basis of expertise. In this paper, the implication of the relaxation factor are translated into fuzzy control rules on the basis of the expertise of numerical analysers, and fuzzy controller incorporated into a numerical algorithm. From two cases of study, Poisson equation and cavity flow problem, we confirmed the possibility of computational acceleration with fuzzy logic and qualitative reasoning in numerical simulations. Numerical experiments with the fuzzy controller resulted in generating a good performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.733-736
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• 1992

In this paper, Finite Element Method was used for the analysis of Potential Distribution of ZnO varistor and visualizing the characteristics of conduction mechanism. The results can be obtained by 2-dimensional element division and numerical method for Poisson's equation.

• 전자공학회논문지D
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• 제35D권5호
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• pp.54-62
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• 1998

In a plasma etching system, ions become an important parameter in determining the wafer topography which depends on both the physical sputtering mechanism and the chemically enhanced reaction. this paper reports the energy and angular distributions of ions across the plasma sheath using a monte carlo method. The ion distribution is mainly affected by the magnitude of the sheath voltage and by the collision in the sheath. Furthemore, the local potential distribution in a plamsa sheath has been determined by solving the poisson's equation. In th is work, ionic collisions were cosidered in terms of both charge exchange and momentum transfer. The three-dimensional distributions of ions were calculated with varying the input process conditions in the plasma reactor.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 1995년도 추계 학술대회논문집
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• pp.175-181
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• 1995

Three-Dimensional Euler equations are solved numerically for the analysis of contraction flows in wind or water tunnels. A second-order finite difference method is used for the spatial discretization on the nonstaggered grid system and the 4-stage Runge-Kutta scheme for the numerical integration in time. In order to speed up the convergence, the local time stepping and the implicit residual-averaging schemes are introduced. The pressure field is obtained by solving the pressure-Poisson equation with the Neumann boundary condition. For the evaluation of the present Euler solver, numerical computations are carried out for the various contraction geometries, one of which was adopted in the Large Cavitation Channel for the U.S. Navy. The comparison of the computational results with the available experimental data shows good agreements.

• 한국전산유체공학회지
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• 제2권1호
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• pp.8-12
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• 1997

The three-dimensional Euler equations are solved numerically for the analysis of contraction flows in wind or water tunnels. A second-order finite difference method is used for the spatial discretization on the nonstaggered grid system and the 4-stage Runge-Kutta scheme for the numerical integration in time. In order to speed up the convergence, the local time stepping and the implicit residual-averaging schemes are introduced. The pressure field is obtained by solving the pressure-Poisson equation with the Neumann boundary condition. For the evaluation of the present Euler solver, numerical computations are carried out for three contraction geometries, one of which was adopted in the Large Cavitation Channel for the U.S. Navy. The comparison of the computational results with the available experimental data shows good agreement.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.125-135
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• 2009

An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.796-797
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• 2008

This paper presents a coupling scheme of LSM(Level Set Method) and Poisson's equation to analyze the dynamic performance of electromagnetic system with moving parts. Remeshing process is necessary to analyze the dynamics of moving object using finite element method. LSM is useful for analysis of moving objects or propagating models in time varying system. In this paper, we proposed the material setting technique of mover using level set function. To validate the algorithm, we adopted the simple hinged electromagnet model with moving arm. The results of simulation are reasonable as expect.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 1998년도 춘계 학술대회논문집
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• pp.43-48
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• 1998

The development of unsteady three-dimensional incompressible viscous solver based on unsteady physical curvilinear coordinate system is presented. A 12-point finite analytic scheme based on local uniform grid spacing is extended for nonuniform grid spacing. The formulation of a condition is suggested to avoid the oscillation of the series summations produced by the application of the method of separation of variables. SIMPLER and pressure Poisson equation techniques are used for solving a velocity-pressure coupled problem. The matrix is solved using the Generalized Minimal RESidual (GMRES) method to enhance the convergence rate of unsteady flow solver and the Kinematic boundary condition of a free surface flow. It is demonstrated that the numerical solutions of these equations are less mesh sensitive.

• Environmental Engineering Research
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• 제11권3호
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• pp.164-171
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• 2006

Numerical modeling of the flow velocity fields for the near corona wire electrohydrodynamic (EHD) flow was conducted. The steady, two-dimensional momentum equations have been computed for a wire-plate type electrostatic precipitator (ESP). The equations were solved in the conservative finite-difference form on a fine uniform rectilinear grid of sufficient resolution to accurately capture the momentum boundary layers. The numerical procedure for the differential equations was used by SIMPLEST algorithm. The Phoenics (Version 3.5.1) CFD code, coupled with Poisson's electric field, ion transport equations and the momentum equation with electric body force were used for the numerical simulation and the Chen-Kim ${\kappa}-{\varepsilon}$ turbulent model numerical results that an EHD secondary flow was clearly visible in the downstream regions of the corona wire despite the low Reynolds number for the electrode ($Re_{cw}=12.4$). Secondary flow vortices caused by the EHD increases with increasing discharge current or EHD number, hence pressure drop of ESP increases.

• 전자공학회논문지A
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• 제30A권4호
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• pp.40-50
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• 1993

In this paper, MODFET devices with various gate length are simulated using the Monte-Carlo method. The number of superparticle is 5000 and the Poisson equation is solved to obtain field distribution. The structure of MODFET is n-AlGaAs/i-AlGaAs/iGaAs and doping concentration of n-AlGaAs layer is 1${\times}10^{17}/cm^{3}$ and the thickness is 500.angs., and the thickness of i-AlGaAs is 50$\AA$. The devices with gate length 0.2$\mu$m, 0.5$\mu$m, 1.0$\mu$m respctively are simulated and the current-voltage curves and transport characteristics of that devices are obtained. Occupancy of each subband and electron energy distribution and conduction energy band in channel have been analyzed to obtain transport characteristics, and particles transposed from source to drain have been analyzed to current-voltage curves. Current level is highest for the device of Lg=0.2$\mu$m and transconductance of this device is 310mS/mm.