• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.1-9
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• 1999

This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

• 대한화학회지
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• 제54권4호
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• pp.380-386
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• 2010

황산 용액에서 양극산화(anodization)에 의하여 생성되는 산화피막의 생성과정(growth kinetics)과 이 피막의 전기적 성질을 전기화학적 임피던스 측정법(electrochemical impedance spectroscopy)으로 조사하였다. 산화피막은 $Al_2O_3$로 점-결함 모형(point defect model)에 따라 성장하였으며, n-형 반도체의 전기적 성질을 보였다.

• 대한산업공학회지
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• 제28권1호
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• pp.57-62
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• 2002

The semiconductor industry has continuously been looking for the ways to improve yield and to reduce manufacturing cost. The layout modification approach, one of yield enhancement techniques, is applicable to all design styles, but it does not require any additional resources in terms of silicon area. The layout modification method for yield enhancement consists of making local variations in the layout of some layers in such a way that the critical area, and consequently the sensitivity of the layer to point defects, is reduced. Chen and Koren (1995) proposed a greedy algorithm that removes defect sensitive area using via moving, but it is easy to fall into a local minimum. In this paper, we present a via moving algorithm using simulated annealing and enhance yield by diminishing defect sensitive area. As a result, we could decrease the defect sensitive area effectively compared to the greedy algorithm presented by Chen and Koren. We expect that the proposed algorithm can make significant contributions on company profit through yield enhancement.

• Current Photovoltaic Research
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• 제8권1호
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년 영문 학술대회
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• pp.72-79
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• 2008

The weak point of the artificial neural network(ANN) is that it is easy to fall in local minima when it learns too much nonlinear data. Accordingly, the classification ratio must be low. To overcome this weakness, the hybrid method has been proposed. That is, the ANN learns data selectively after detecting the defect position by the support vector machine(SVM). First, the SVM has been used for determination of the defect position and then the magnitude of the defect has been measured by the ANN. In off-design condition, the operation region of the engine is wide and the nonlinearity of learning data increases. The module system, dividing the whole operating region into reasonably small-size sections, has been suggested to solve this problem. In this study, the proposed algorithm has diagnosed the defects of triple components as well as single and dual components of the gas turbine engine in off-design condition.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년도 제31회 추계학술대회논문집
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• pp.23-27
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• 2008

본 논문에서는 실수코드 유전 알고리즘(RCGA)과 인공신경망(ANN)을 이용하여 항공기용 터보 축엔진의 결함 진단에 관한 연구를 수행하였다. 인공신경망만을 이용하여 엔진의 결함을 판단 할 경우 많은 학습데이터 때문에 지역 최소점으로 수렴하는 단점이 있다. 이를 개선하기 위해 전역 최소점을 찾는 능력이 뛰어난 실수코드 유전 알고리즘을 사용하였다. 5% 이내의 RMS 결함오차로 높은 결함 예측 신뢰도를 가짐을 확인하였다.

• Archives of Plastic Surgery
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• 제49권3호
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• pp.365-368
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• 2022

Spinal extradural arachnoid cyst (SEAC) is a rare disease and has surgical challenges because of the critical surrounding anatomy. We describe the rare case of a 58-year-old woman who underwent extradural cyst total excision with dural repair and presented with refractory cerebrospinal fluid (CSF) leakage even though two consecutive surgeries including dural defect re-repair and lumbar-peritoneal shunt were performed. The authors covered the sacral defect using bilateral gluteus maximus muscle flap in tongue in groove and wrap around pattern for protection of visible sacral nerve roots and blockage of CSF leakage point. With the flap coverage, the disappearance of cyst and fluid collection was confirmed in the postoperative radiological finding, and the clinical symptoms were significantly improved. By protecting the sacral nerve roots and covering the base of sacral defect, we can minimize the risk of complication and resolve the refractory fluid collection. Our results suggest that the gluteus muscle flap can be a safe and effective option for sacral defect and CSF leakage in extradural cyst or other conditions.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2000년도 정기총회 및 구정회교수 추모 춘계학술연구발표회
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• pp.32-32
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• 2000

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2004년도 추계학술발표회 발표논문집
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• pp.941-942
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• 2004

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.220-220
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• 2005