• Proceedings of the Korea Concrete Institute Conference
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• 2008.11a
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• pp.9-12
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• 2008

The semi-rigid joint is the shape of middle that can supplement the defect of pin joints and accept the good point of rigid joints. Recently, a study on the pin joints is activated in the country, but because the study on semi-rigid joints is not many, this study tried to prove with producing test model of three shape. The test models are rigid joint HI-R, semi-rigid joint HI-S, pin joint HI-P. As a result of the test, respectively HI-R, HI-S, HI-P appeared shear failure of joint, flexure failure of the top fixing, flexure failure of the lower part slipping stair slab, and the maximum strength is measured to 51.74, 51.4, 24.63kN, the stiffness is appeared 1.58, 1.19, 0.37 respectively, The yield strength is respectively kept 44.5, 47.3, 24kN, and ductility ratio is appeared to 3.31, 2.32, 1.54, when is based on KBC code, sag of the acting service load is appeared that HI-P model is over the standard. When is based on distribution of bars strain ratio, HI-S seems similar behavior incipiently, but after the yield, the semi-rigid joint was able to be judged better than pin joint because of the stress allotment of joint internal elements.

• Korean Journal of Construction Engineering and Management
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• v.12 no.6
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• pp.14-21
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• 2011

A unit modular system is a construction method which installs on site by manufacturing 50%~90% of the whole process in the factory. This method can minimize the process in the site and maximize the operation, which will reduce the duration and improve the overall quality. The recent paradigm of construction is to be sustainable building. Modular system can be regarded as a sustainable building construction method because it can reduce the amount of construction waste by recycling partial or whole part of overdue building be torn down. A unit modular system is the answer to cope with the increasing market of small size housings. A unit modular system is the most appropriate option at this point. This research proposes the standard operation and construction process of modular system, which enable to optimal system. A case study of reconstructing small-size housing was introduced to support this proposal. Finished unit modular is the reasonable way. However, 80% of complication rate of the modular is the most rational when a defect occurrence during delivery is considered.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.25-31
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• 2004

In this paper, we introduce kinetic Monte Carlo (kMC) methods for simulating diffusion process in nano-scale device fabrication. At first, we review kMC theory and backgrounds and give a simple point defect diffusion process modeling in thermal annealing after ion (electron) implantation into Si crystalline substrate to help understand kinetic Monte Carlo methods. kMC is a kind of Monte Carlo but can simulate time evolution of diffusion process through Poisson probabilistic process. In kMC diffusion process, instead of. solving differential reaction-diffusion equations via conventional finite difference or element methods, it is based on a series of chemical reaction (between atoms and/or defects) or diffusion events according to event rates of all possible events. Every event has its own event rate and time evolution of semiconductor diffusion process is directly simulated. Those event rates can be derived either directly from molecular dynamics (MD) or first-principles (ab-initio) calculations, or from experimental data.

• Archives of Reconstructive Microsurgery
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• v.14 no.1
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• pp.1-13
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• 2005

Purpose: The purpose of this study is to present extended indications for the use of arterialized venous flaps in reconstructing soft tissue, tendon, nerve, blood vessel, and composite tissue defects of the hand of various sizes based on researches and clinical experiences of the authors. Moreover, procedures to achieve complete flap survival and postoperative results are presented. Materials & methods: This study is based on 154 cases of arterialized venous flaps performed to reconstruct the hand during the past 11 years. The most common cause of injury was industrial accidents with 125 cases. One hundred thirty patients or 84% of the cases had emergency operation within 2 weeks of the injury. The flaps were categorized depending on the size of the flap. Flaps smaller than $10\;cm^2$ were classified as small (n=48), those larger than $25\;cm^2$ classified large (n=42) and those in between medium (n=64). Classified according to composition, there were 88 cases (57.1 %) of venous skin flaps, 28 cases of innervated venous flaps, 15 cases of tendocutaneous venous flaps, which incorporated the palmaris longus tendon, for repair of extensor tendons of the fingers, and 17 cases of conduit venous flaps to repair arterial defect. There were 37 cases where multiple injuries to multiple digits were reconstructed. Moreover, there were 6 cases of composite tissue effects that involved soft tissue, blood vessels and tendons. The donor sites were ipsilateral forearm, wrist and thenar area, foot dorsum, and medial calf. The recipient sites were single digit, multiple digits, first web space, dorsum and palm of hand, and wrist. Results: There were seven cases (4.5%) of emergent re-exploration due to vascular crisis, and 3 cases of flap failure characterized by more than 50% necrosis of the flap. The survival rate was 98.1 % (151/154). In small flaps, an average of 1.01 afferent arteries and 1.05 efferent veins were microanastomosed, and in large flaps, an average of 1.88 afferent arteries and 2.19 efferent veins were anastomosed. In 8 cases where innervated flaps were used for reconstructing the palm of the hand, the average static two-point discrimination was $10\;(8{\sim}15)\;mm$. In 12 cases where tenocutaneous flaps were used, active range of motion at the proximal interphalangeal joint was 60 degrees, 20 degrees at the distal interphalangeal joint, and 75 degrees at the metacarpophalangeal joint. Conclusion: We conclude that the arterialized venous flap is a valuable and effective tool in the reconstruction of hand injuries, and could have a more comprehensive set of indications.

• Archives of Reconstructive Microsurgery
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• v.19 no.1
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• pp.37-45
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• 2010

Purpose: First introduced by Buncke and Rose in 1979, the neurovascular partial $2^{nd}$ toe pulp free tissue transfer has been attempted to reconstruct posttraumatic finger tip injuries. Although some surgeons prefer other reconstructive methods such as skin graft and local flap, we chose the partial $2^{nd}$ toe pulp flap owing to its many advantages. We report three successful surgical cases in which the patients had undergone this particular method of reconstruction. Methods: We retrospectively examined three cases of fingertip injury patients due to mechanical injury. Bone exposure was seen in all three cases, All had undergone partial toe pulp free flap for soft tissue defect coverage. Results: All flaps survived without any complications such as partial necrosis, hematoma or dehiscence. Although tingling sensation has returned in both cases, two-point discrimination has not returned yet. Currently no patient is complaining of any pain which gradually improved during their course of recuperation. All stitches were removed on postoperative 2 weeks. Patients are satisfied with the final surgical result and there are no signs of any edema or hematoma. Conclusion: The homodigital reconstruction of finger tip injury using the partial $2^{nd}$ toe pulp flap has numerous advantages compared to other reconstructive modalities such as its resistance to wear and tear and in that it provides a non-slip palmar digital surface. However it requires microsurgery which may not be preferred by surgeons. Advanced age of the patient can be a relative contraindication to this approach since atheromatous plaque from the donor toe can compromise flap circulation after surgery. We report three successful cases which patient age was considered appropriate. Further investigation with a larger number of cases and long term follow-up is deemed necessary.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.7
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• pp.511-523
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• 1989

This paper investigates physical properties, the electrical and mechanical characteristics of the epoxy resin with different curing methods and postcuring conditions at room temperature or cryogenic temperature (LN2). According to the results in this paper, first, it is found that the physical properties, electrical and mechanical characteristics of the epoxy resin are largely affected by the interior reaction temperature on the curing. Thus, in the fabrication of the sample, several excellent characteristics of the sample are obtained by controlling the interior reaction temperature of the epoxy resin. Second, the sample having optimal electrical and mechanical characteristics is obtained for the repetitive post-curing method at 100c in view point of the post-curing conditions of the epoxy resin. Third, it appears that tan and characteristics at LN2 temperature are about half of those at room temperature. Fourth, it appears that the dielectric strength of the epoxy resin at LN2 temperature is higher by about 0.6-1.0 MV/cm than that at room temperature. The heat-aging of the epoxy resin due to the micro-defect and excess fever-movement have been noticed to affect dielectric strength at LN2 temperature more significantly than at room temperature.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.74-85
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• 1993

Single crystals of LiNbO3 have found extensive application in electro-optic and nonlinear optic devices. However, laser-induced refartive index inhomogeneities, which have been labeled opical damage impose limits on device optical damage in LiNbO3 is imporved if more than 4.5 rml% MgO is added to the melt The laser damage thrueshold increased as much as 100 times better then that of undoped crystals. The MgO doped cystal has thus been urterlsiv81y studied since then. In the study, Mgo:LiNbOs(MLA) single crystals dopsd with 0, 2.5, 5.0, 7.5, 10.0 mol% MgO have been grown by the czocrualski technique. The metls were prepared in the platinum crluible and 15∼20mm diameter crystals were grown with a length of 20∼30mm in a resitance heater. The growth rate was 2.5mm/hr, the rotation speed 15rpn. Before sawing MLN single crystals were annealed for 24 hours under atmosphere at a temperature of 1080℃. After sawing, we have found an annual ring cross section of MNA crystals only in the direction of perpendicilar to the c-axis. Nonuniform dispusion of MgO was pointed out that the cuties of the state of oxide were strongly affected by oxygen partial pressure in.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.5
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• pp.121-133
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• 2013

Defect-free transfer service on the Next-generation wireless network extensive roaming mobile node (MN) to provide efficient mobility management has become very important. MIPv6(Mobility IPv6) is one of mobility management scheme proposed by IETF(Internet Engineering Task Force), and IPv6-based mobility management techniques have been developed in various forms. One of each management techniques, IPv6-based mobility management techniques for PMIPv6 (MIPv6) system to improve the performance of a variety of F-PMIPv6 (Fast Handover for Proxy MIPv6) is proposed. However, the F-PMIPv6 is cannot be excellent than PMIPv6 in all scenarios. Therefor, to select a proper mobility management scheme between PMIPv6 and F-PMIPv6 becomes an interesting issue, for its potenrials in enhancing the capacity and scalability of the system. In this paper, we develop an analytical model to analyze the applicability of PMIPv6 and F-PMIPv6. Based on this model, we design an Secure Smart Mobility Support(SSM) scheme that selects the better alternative between PMIPv6 and F-PMIPv6 for a user according to its changing mobility and service characteristics. When F-PMIPv6 is adopted, SSM chooses the best mobility anchor point and regional size to optimize the system performance. Numerical results illustrate the impact of some key parameters on the applicability of PMIPv6 and F-PMIPv6. Finally, SSM has proven even better result than PMIPv6 and F-PMIPv6.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.447-453
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• 1999

Congruent $LiNbO_3$ crystals with doped Mg and codoped with Mn or Fe were grown by the Czochralski method. It is known that the physical properties of $LiNbO_3$ depend strongly on the addition of Mg and transition metals. This is established by studying the following properties; XRD patterns, the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$ vibration and lines of the ESR of $Fe^{3+},\; Mn^{2+}$. The position of the UV absorption edge and the shape and peak point of the absorption band of the $OH^-$ vibrational band changed monotonously up to a critical concentration of $Mg^{2+}$ ions. The mechanism of the incorporation of Mg ions changes at this concentration. The transition temperature was estimated by measuring the dielectric temperature behavior up to $1230^{\circ}C$ in a frequency range of 100Hz to 10MHz. EPR of $Mn^{2+}\;and\; Fe^{3+}$ ions were employed to investigated the Mg doping effects in the $LiNbO_3$ crystal. The increase of linewidths and the asymmetry of signals were observed in all crystals. New signals of $Fe^{3+}$ arising from the new centers were observed I the heavily Mg-doped crystals.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.663-669
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• 2014

The electrical characteristics of RRAM with different annealing temperature and thickness have been measured and discussed. The devices with Pt/Ti top electrode of 150nm, Pt bottom electrode of 150nm, $HfO_2$ oxide thickness of 45nm and 70nm have been fabricated. The fabricated device were classified by 3 different kinds according to the annealing temperature, such as non-annealed, annealed at $500^{\circ}C$ and annealed at $850^{\circ}C$. The set and reset voltages and the variation of resistance with temperatures have been measured as electrical properties. From the measurement, it was found that the set voltages were decreased and the reset voltage were increased slightly, and thus the sensing window was decreased with increasing of measurement temperatures. It was remarkable that the device annealed at $850^{\circ}C$ showed the best performances. Although the device with thickness of 45nm showed better performances in the point of the sensing window, the resistance of 45nm devices was large relatively in the low resistive state. It can be expected to enhance the device performances with ultra thin RRAM if the defect generation could be reduced at the $HfO_2$ deposition process.