• Title/Summary/Keyword: Platinum etching

Search Result 26, Processing Time 0.039 seconds

A Study on the Properties of Platinum Dry Etching using the MICP (MICP를 이용한 Platinum 건식 식각 특성에 관한 연구)

  • Kim, Jin-Sung;Kim, Jung-Hun;Kim, Youn-Taeg;Joo, Jung-Hoon;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
    • /
    • 1997.11a
    • /
    • pp.279-281
    • /
    • 1997
  • The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.

  • PDF

A study on platinum dry etching using a cryogenic magnetized inductively coupled plasma (극저온 자화 유도 결합 플라즈마를 이용한 Platinum 식각에 관한 연구)

  • 김진성;김정훈;김윤택;황기웅;주정훈;김진웅
    • Journal of the Korean Vacuum Society
    • /
    • v.8 no.4A
    • /
    • pp.476-481
    • /
    • 1999
  • Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

  • PDF

A Study on Etching of Platinum Thin Film in ICP Using Ar/HBr/$Cl_2$ Gases (ICP를 이용한 Ar/HBr/$Cl_2$ 가스에서 백금 박막의 식각 연구)

  • Kim, Nam-Hoon;Kim, Chang-Il;Kwon, Kwang-Ho;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
    • /
    • 1998.07d
    • /
    • pp.1294-1296
    • /
    • 1998
  • Platinum thin films which hardly form volatile compounds with any reactive gas at normal process temperature was etched in Inductively Coupled Plasma (ICP) using Ar/HBr/$Cl_2$ gases. It is observed that the etch rate of platinum is reduced as increasing of HBr/$Cl_2$ gas mixing ratio when Ar gas ratio is fixed. However, we obtain good etching profile of platinum films without unwanted residues in 90% Ar/5% HBr/5% $Cl_2$ gas mixing ratio.

  • PDF

$N_2$ Gas roles on Pt thin film etching using Ar/$C1_2/N_2$ Plasma (Ar/$C1_2/N_2$플라즈마를 이용한 Pt 박막 식각에서 $N_2$ Gas의 역할)

  • 류재홍;김남훈;이원재;유병곤;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.11a
    • /
    • pp.468-470
    • /
    • 1999
  • One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

  • PDF

Polishing Characteristics of Pt Electrode Materials by Addition of Oxidizer (산화제 첨가에 따른 백금 전극 물질의 연마 특성)

  • Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the KIEE Conference
    • /
    • 2006.07c
    • /
    • pp.1384-1385
    • /
    • 2006
  • Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

  • PDF

Properties of the Pt Thin Etching in $BCI_3/CI_2$gas by Inductive Coupled Plasma (ICP에 의한 $BCI_3/CI_2$플라즈마 내에서 Pt 박막의 식각 특성)

  • 김창일;권광후
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.11 no.10
    • /
    • pp.804-808
    • /
    • 1998
  • The inductively coupled plasma(ICP) etching of platinum with BCl$_3$/Cl$_2$ gas chemistry has been studied. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical binding states of the etched surface. The plasma characteristics was extracted from optical emission spectroscopy (OES) and a single Langmuir probe. In this case of Pt etching using BCl$_3$/Cl$_2$ gas chemistries, the result of OES and Langmuir probe showed the increase of Cl radicals and ion current densities in the plasmas with increasing Cl$_2$ gas ratio. At the same time, XPS results indicated that the intensities of Pt 4f decreased with increasing Cl$_2$ gas ratio. The decrease of Pt 4f intensities implies the increase of residue layer thickness on the etched Pt surface.

  • PDF

Investiagtions on the Etching of Platinum Film using High Density Inductively Coupled Ar/Cl$_2$ HBr Plasmas

  • Kim, Nam-Hoon;Chang-Il kim;Chang, Eui-Goo;Kwon, Kwang-Ho
    • Transactions on Electrical and Electronic Materials
    • /
    • v.1 no.3
    • /
    • pp.14-17
    • /
    • 2000
  • Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

  • PDF