• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.344-349
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• 2004

Emulsions were formed through putting small quantity of nickel electroplating solution into supercritical carbon dioxide, and then electroplating in the $sc-CO_2$ emulsions was conducted. It is an environmental-friendly technology that can solve the treatment of a large quantity of toxic plating wastewater, which is a big problem in the existing wet plating, and also can reduce secondary waste generation fundamentally. Supercritical carbon dioxide emulsions enhanced by ultrasonic horn were formed by non-ionic surfactant and nickel solution. Plating condition within emulsions was set up as 120bar and $55^{\circ}C$ through measurement of electrical conductivity following the pressure change. Experiments were conducted respectively against supercritical carbon dioxide emulsions electroplating and general chemical electroplating, and then their results were compared and analyzed. As the experiment result utilizing emulsions, plating surface was formed very evenly even with a small quantity of electroplating solution, and fine particles were plated compactly without any pinhole or crack due to hydrogenation, which occurs in general electroplating. Used electroplating solution can be reused through recovery process. Therefore, this technology will be able to be applied as new clean technology in electro-plating.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.131-137
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• 2007

The typical MCFC (molten carbonate fuel cell) anode is made of Ni-10%Cr alloy. The work of this paper is focused concerning long life of anode because Ni-10% Cr anode is suffering from sintering and creep behavior during cell operation. Therefore, Ni-coated Alumina powder($20{\mu}m$) was developed by electroless nickel plating. Optimum condition of electroless nickel coation on $20{\mu}m$ alumina is as follows: pH 11.7, temperature $65{\sim}80^{\circ}C$, powder amount $100cm^2/l$. The deposition rate for Ni-electroless plating was as a function of temperature and activation energy was evaluated by Arrhenius Equation thereby activation energy calculated slope of experimental data as 117.6 kJ/mol, frequency factor(A) was $6.28{\times}10^{18}hr^{-1}$, respectively.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.05a
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• pp.37-37
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• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.5-5
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• 2001

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.29-32
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• 2013

The surface roughness and reflectivity of electroless-plated Sn-3.5 wt%Ag on a LED (light emitting diode) lead frame were investigated. Cu electroplating was carried out prior to electroless plating of Sn-3.5Ag to improve the reflectivity of the Sn-3.5Ag deposit. In order to investigate the effect of stirring speed and temperature of the plating solution, surface roughness and reflectivity was measured. The experimental results revealed that the thickness of the deposit layer increased with stirring speed and temperature of the plating solution. Stirring speed is increased from 100 to 300 rpm, the surface roughness was reduced from 0.513 to 0.266 ${\mu}m$, and the reflectivity increased from 1.67 to 1.84 GAM. As temperature of the plating solution increased from 25 to $45^{\circ}C$, the surface roughness reduced from 0.507 to 0.350 ${\mu}m$, and the reflectivity increased from 1.68 to 1.84 GAM.

• Journal of Power System Engineering
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• v.5 no.2
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• pp.71-78
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• 2001

Using sodium hypophosphite as reducing agent, bath composition and plating condition of electroless copper plating on plating rate have been studied. The followings were determined as optimum, bath composition; $CuSO_4\;0.025M,\;NiSO_4\;0.002M,\;NaH_2PO_2\;0.4M$, sodium citrate 0.06M, $H_3BO_3$ 0.6M, thiourea or 2-MBT $0.2mg/{\ell}$, and operation conditions; pH $9{\sim}10$ at bath temperature rage of $60{\sim}70^{\circ}C$. A small amount of nickel ion($Ni^{2+}/Cu^{2+}$=0.002/0.025) to the hypophosphite reduced solution promotes autocatalysis and continuous plating. An additive such as thiourea or 2-MBT of a small amount($0.2mg/{\ell}$) can be used to stabilize the solution without changing plating rate much. The attivation energy between $20^{\circ}C\;and\;70^{\circ}C$ were calculated to be 11.3kcal/mol for deposition weight. Plating reaction had been ceased by the adjustment of pH above 13, temperature higher than $90^{\circ}C\;and\;under\;20^{\circ}C$. Deposited surface became worse in the case of increment of bath temperature above $80^{\circ}C$.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.336-341
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• 2008

Recently, research on a flat panel display(FPD) has focused on organic light-emitting display(OLED) which has wide angle of view, high contrast ratio and low power consumption. ITO(Indium-Tin-Oxide) films are the most widely used material as a transparent electrode of OLED and also in many other display devices like LCD or PDP. The performance and efficiency of OLED is related to the surface condition of ITO coated glass substrate. The typical surface defect of glass substrate is measured for electric characteristics and physical condition for transmittance and roughness. Since ITO coated glass substrate can be destroyed for inspection about surface roughness, sheet resistance, film thickness and transmittance, precise fabrication condition should be made based on the estimated relationship. In this paper, ITO films were prepared on the commercial glass substrate by the Ion-Plating method changing the partial pressure of gas(Ar, 02) and the chamber temperature between $200^{\circ}C$ and $300^{\circ}C$. The characteristics of films were examined by the 4-point probe, supersonic thickness measurement, transmittance measurement and AFM. We estimated the relationship between processing parameters(Ar gas, O2 gas, Temperature) and properties of ITO films (Sheet Resistance, Film Thickness, Transmittance, Surface Roughness).

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.17-32
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• 2002

Electroplating methods by molten salts and non-aqueous melts were employed for aluminium coating on STS 316L stainless steel. After coated with Ni or non-coated surface on stainless steel, Al pulse plating was carried out in two different types of electrolytes at room temperature. The Al layer from $AlCl_3$-TMPAC melts could not obtain appreciable thickness for engineering application due to chemical reactions between deposits and moisture of air. However, The Al coating by pulse plating in the Ethylbenzene-Toluene-$AlBr_3$ systems was found to be solid coating layer with a few $\mu\textrm{m}$ scale. The conductivity of Ethylbenzene-Toluene-$AlBr_3$ electrolyte was as functions of time and agitation. By seven days exposure after mixing of the electrolyte, Al-deposited layer shows uniform and near by pore-free with high current density (higher than 30mA/$\textrm{cm}^2$). The roughness and imperfection of coating layer were decreased with a increasing agitation speed. It was found that the optimum condition for the Al pulse plating on the 316L stainless steel was a 400mA peak current, duty cycle, $t_{on}$ $t_{ off}$=3ms/1ms, and a current density of 30mA/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.1-2
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• 2000

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.