• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.246-251
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• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.686-686
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• 2013

Crystalline silicon solar cell is a semiconductor device that converts light into electrical energy. Screen printing is commonly used to form the front/back electrodes in silicon solar cell. Screen printing method is convenient but usually shows high resistance and low aspect ratio, which cause the efficiency decrease in crystalline silicon solar cell. Recently the plating method is applied in c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of additional electroless Ag plating into screen-printed c-Si solar cell and compared their electrical properties. All wafers used in this experiment were textured, doped, and anti-reflection coated. The electrode formation was performed with screen-printing, followed by the firing step. Aften then we carried out electroless Ag plating by changing the plating time in the range of 20 sec~5 min and light intensity. The light I-V curve and optical microscope were measured with the completed solar cell. As a result, the conversion efficiency of solar cells was increased mainly due to the decreased series resistance.

• 한국표면공학회지
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• 제48권5호
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• pp.199-204
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• 2015

Recently, fuel cell is a good alternative for energy source. Separator is a important component for fuel cell. In this study, The surface of separator was modified for corrosion resistance and electric conductivity. Reduced graphene oxide (rGO) was made by Staudenmaier's method. Nickel, phosphorus and rGO were coated on 6061 aluminum alloy as a separator of proton exchange membrane fuel cell by composite electroless plating. Scanning electron microscope, energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy were used to examine the morphology of Ni-P-rGO. Surface images were shown that the rGO was dispersed on the surface of Ni-P electroless plating, and nickel was combined with the un-reduced oxygen functional group of rGO.

• 공업화학
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• 제17권2호
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• pp.150-157
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• 2006

최근 들어 크롬대체 도금공정의 필요성이 대두되고 있는 가운데, 크롬도금과 색차가 적고 기계적 특성이 우수하며 환경 친화적인 주석 계 합금도금의 사용이 확대되고 있다. 따라서 본 연구에서는 Sn-Co 합금도금공정을 바탕으로 광택제, 착화제로서 glycine 사용에 대한 연구를 수행하고자 하였다. Sn-Co 합금도금과 glycine 첨가에 따른 물리적 특성 및 표면 광택측정을 위해 Hull-cell 분석 및 도금표면분석을 수행하였다. Hull-cell 분석결과 glycine의 첨가량이 증가함에 따라 광택특성은 우수한 것으로 관찰되었으며, 표면광택성이 가장 우수한 도금조건으로는 $50^{\circ}C$, pH = 8의 조건에서 전전류 공급량 1 A로 1 min간 도금한 경우 음극전류밀도 $1A/dm^2$인 영역을 추천할 수 있었다. 동일조건의 pilot 실험을 $10{\mu}m$ 두께로 Ni하지 도금 후 Sn-Co 합금도금액 기본조성인 0.03 M $SnCl_{2}{\cdot}2H_{2}O$, 0.05 M $CoSO_{4}{\cdot}7H_{2}O$, 0.7 M $K_{4}P_{2}O_{7}$의 혼합 용액에서 수행하 였다. $0.2{\sim}0.6 {\mu}m$의 도금두께를 갖는 Sn-Co 합금도금 표면의 기계적 특성과 도금표면의 성분분석 결과 glycine의 첨가량이 15 g/L일 때 우수한 밀착성, 내식성, 내마모성을 보였다. 따라서 Sn-Co 합금도금공정에 glycine을 첨가한 용액을 크롬도금공정의 최적 도금용액으로 추천할 수 있었다.

• Korean Chemical Engineering Research
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• 제54권1호
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• pp.108-113
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• 2016

A miniaturized lab-scale Cu plating cell for the metallization of electronic devices was fabricated and its deposit uniformity and profile were investigated. The plating cell was composed of a polypropylene bath, an electrolyte ejection nozzle which is connected to a circulation pump. In deposit uniformity evaluation, thicker deposit was found on the bottom and sides of substrate, indicating the spatial variation of deposit thickness was governed by the tertiary current distribution which is related to $Cu^{2+}$ transport. The surface morphology of Cu deposit inside photo-resist pattern was controlled by organic additives in the electrolyte as it led to the flatter top surface compared to convex surface which was observed in the deposit grown without organic additives.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• 공업화학
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• 제19권2호
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• pp.228-235
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• 2008

니켈 표면처리 공정에서 전류밀도에 따라 니켈의 전착두께가 증가되었으며, 증가폭은 $6{\sim}10A/dm^2$에서 저전류보다 높게 나타났다. 전류밀도를 측정하기 위해 Hull-cell 분석을 수행 하였다. 최적 공정온도는 $60^{\circ}C$, pH는 3.5~4.0이었고, 전해용액 중 니켈이온의 농도는 300 g/L 이상에서 농도에 따라 전착두께가 증가되었다. 전류밀도에 따라 용액 중 니켈이온 감소 속도가 증가되었는데, 이는 음극표면에서 니켈 전착 량에 따른 전착두께의 증가를 나타낸다. 그러나 전착속도가 빠를 경우 니켈 전착 층의 치밀성은 저하되며, 표면의 상태는 불규칙하게 변화된다. 니켈이온의 전착과정이 불규칙하게 일어나 조직의 pin hole 등을 야기해 표면특성을 저하시키는 것으로 확인되었다. 광택니켈 전착 후 25 h 내식을 유지한 결과, 낮은 전류밀도를 유지하는 것이 내식특성이 우수한 것으로 나타났다. 프로그램모사 결과, 전류밀도가 높아질수록 확산 층의 두께는 증가하며, 음극표면의 농도는 낮아진다. 농도분포는 낮은 전류밀도에서 고른 분포를 나타내었으며 이는 일정한 전착두께를 예측할 수 있다. 생산성 저하를 예방하기 위해 공정시간은 크게 변화시키지 않았으며, 전류밀도와 전착두께를 변화시키면서 공정변수를 조절하였다. 본 연구의 표면분석 결과 조직특성이나 내식성 등의 표면 물성이 낮은 전류밀도를 사용할 경우에 더욱 우수한 것으로 나타났다.

• 융복합기술연구소 논문집
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• 제8권1호
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• pp.33-39
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• 2018

The screen printing method for forming the electrode by applying the existing pressure is difficult to apply to thin wafers, and since expensive Ag paste is used, it is difficult to solve the problem of cost reduction. This can solve both of the problems by forming the front electrode using a plating method applicable to a thin wafer. In this paper, the process conditions of electrode formation are optimized by using LIEP (Light-Induced Electrode Plating). Experiments were conducted by varying the Ni plating bath temperature $40{\sim}70^{\circ}C$, the applied current 5 ~ 15 mA, and the plating process time 5 ~ 20 min. As a result of the experiment, it was confirmed that the optimal condition of the structural characteristics was obtained at the plating bath temperature of $60^{\circ}C$, 15 mA, and the process time of 20 min. The Cu LIEP process conditions, experiments were conducted with Cu plating bath temperature $40{\sim}70^{\circ}C$, applied voltage 5 ~ 15 V, plating process time 2 ~ 15 min. As a result of the experiment, it was confirmed that the optimum conditions were obtained as a result of electrical and structural characteristics at the plating bath temperature of $60^{\circ}C$ and applied current of 15 V and process time of 15 min. In order to form Ni silicide, the firing process time was fixed to 2 min and the temperature was changed to $310^{\circ}C$, $330^{\circ}C$, $350^{\circ}C$, and post contact annealing was performed. As a result, the lowest contact resistance value of $2.76{\Omega}$ was obtained at the firing temperature of $310^{\circ}C$. The contact resistivity of $1.07m{\Omega}cm^2$ can be calculated from the conditionally optimized sample. With the plating method using Ni / Cu, the efficiency of the solar cell can be expected to increase due to the increase of the electric conductivity and the decrease of the resistance component in the production of the solar cell, and the application to the thin wafer can be expected.