• Journal of the Korean institute of surface engineering
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• v.42 no.2
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• pp.86-94
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• 2009

Various types of multilayer coatings including Al/$Al_2O_3$ structure have been prepared on Nd-Fe-B permanent magnet to modify the morphology of the coating and to enhance the corrosion resistance of the magnet. Magnetron sputtering has been employed to make the multilayer coatings. $Al_2O_3$sputtering conditions were optimized in reactive sputtering by varying the deposition parameters. The formation of $Al_2O_3$ film was confirmed from the binding energy shift measured by electron spectroscopy for chemical analysis. 3 types of coating structures were designed and prepared by magnetron sputtering. The coating structures consist of (1) single Al coating, (2) modified coatings having oxide or plasma treated layer in the middle of coating structure, and (3) Al/$Al_2O_3$ multilayer coatings. Surface and cross-sectional morphologies showed that Al/$Al_2O_3$ multilayer grew as a layered structure, and that very compact Zone 3 like structure were formed. X-ray diffraction peak showed that the crystal orientations of multilayer coatings were similar to that of the bulk powder pattern. Hardness increased drastically when the Al thickness was around 1im in the Al/$Al_2O_3$ multilayer. From the salt spray test and pressure cooker test, it has been shown that the multilayer coatings showed good corrosion resistance compared to Al single or modified layer coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Journal of the Korean Electrochemical Society
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• v.9 no.1
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• pp.34-39
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• 2006

Electrochemical properties of Cu foil current collector with a $Li_{0.5}La_{0.5}TiO_3$ Cu a Si thin film deposited by r.f sputtering as an anode for Li free battery were evaluated. The Cu foil current collectors were lied in and out of plasma during sputtering process. The X-ray diffraction results indicated that the as-deposited Si and $Li_{0.5}La_{0.5}TiO_3$ thin films in and out of plasma did not show any crystalline difference. The $Li_{0.5}La_{0.5}TiO_3$ film in plasma and Si film out of plasma showed better cyclability since crystalline $Li_{0.5}La_{0.5}TiO_3$ has much higher ionic conductivity and crystalline Si film is much sensitive far volume change during charge-discharge process. These results suggested that the deposition of amorphous Si on Cu foil current collector is much better for fabrication of Li free battery and it can be useful for the unique battery with a cycling number constraint of below 10.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.587-591
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• 1998

AZO transparent conducting thin film were fabricated by DC magnetron sputtering using the Zn: Al (2% aluminu contained ) alloy target with inducing microwave to the plasma, and the effect of microwave was studied. The optical transmittance, the resistivity and dynamic deposition rate at the applied voltage to target of 420 V was 50~70%, $ 5.5{\times}10^{-3}{\Omega}$cm and 6,000 $\AA\textrm{mm}^2$/J, respectively. After annealing AZO coated glass at $400^{\circ}C$ for 30 minutes, the light transmittance was increased to 80% and electrical conductivity was also increased two times, reached to resistivity of $2.0{\times}10^{-3}{\Omega}$cm.

• Proceedings of the Korea Contents Association Conference
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• 2009.05a
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• pp.807-809
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• 2009

Thin film deposition methods have been widely used and intensively investigated because high quality crystalline films enable to fabricate by sputtering. Especially rf magnetron sputtering deposition has advantages of being employ a relatively high deposition rate and also to achieve high crystalline films in low pressure because plasma density around target by magnetic is high. To apply ZnO thin film for SAW filter, it has highly flat surface, excellent c-axis preferred orientation and high resistivity value. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity. C-axis preferred orientation, resistivity and surface roughness highly depended on oxygen/argon gas ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.620-623
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• 2004

In this study, the discharge characteristic of FTS (Facing Targets Sputtering) apparatus was investigated using metal target paramagnetic and ceramic targets such as Zn, Al, $ZnO:Al(Al_2O_3)$, ITO. Threshold voltage and stable stage of discharge show different with target species. Compare with commercial sputtering apparatus, the FTS apparatus is a high-speed sputter method that promotes ionization of sputter gas by screw and reciprocate moving high-speed ${\gamma}$electrons which arrays two targets facing each other, inserts plasma arresting magnetic field to the parallel direction of the center axis of both targets, discharged from targets and accelerated at the cathode falling area. Especially, we notice that the FTS method using ceramic target has stable discharge characteristic even by DC power source.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.106-110
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• 2004

Nickel oxide (NiO) thin films were prepared on Si(100) substrates at room temperature by RF magnetron sputtering using a NiO target. The effects of oxygen flow ratio for the plasma gas on the preferred orientation and surface morphology of the NiO films were investigated. Highly crystalline NiO film with (100) orientation was obtained when it was deposited in pure Ar gas. For NiO film deposited in pure O$_2$ gas, on the other hand, the orientation of the film changed from (100) to (111) and its deposition rate decreased. The origin of the preferred orientation of the films was discussed. NiO films also showed different surface morphologies and roughnesses with the oxygen flow ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.142-145
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.