• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.6-10
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• 2016

In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.271-271
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• 2012

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1802-1806
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• 2007

Nowadays, many configurations and applications of small atmospheric plasma source have been investigated with growing interest, as it provides the bacteria inactivation, the surface modification and removal of unwanted small regions, and so on. In this paper, the non-thermal micro plasma source under atmospheric pressure by means of submicrosecond pulse voltage waveforms is suggested. Plasma operates in helium is appears as a small (sub-mm) glow at the tip of a plasma gun. Electrical measurements show that the plasma source operates at low voltage (about 500V) and the power consumption is about 1W at 25kHz. Moreover, the emission spectrum shows the relatively higher emission intensity of oxygen particles than those of helium and nitrogen.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.494-499
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• 2004

A ion source using inductively coupled plasma has been tested in order to test its feasibility as a high brightness ion source for focused ion beam. When operating the ion source with filter magentas in front of plasma electrode for a negative ion source, lower remittances are expected. Extracted beam remittances are measured with an Allison-type scanning device for various plasma parameters and extraction conditions. The normalized omittance has been measured to be around 0.2$\pi$mmmrad with beam currents of up to 0.55 ㎃. In particular, noting that multicusp magnets have a role in decreasing the remittance as well as increasing plasma discharge efficiency, transverse magnetic field has been confirmed to be a useful tool fur decreasing remittance via electron energy control.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.176-177
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• 2016

In the last few decades, attention toward atmospheric pressure plasma (APP) has been greatly increased due to the numerous advantages of those applications, such as non-necessity of high vacuum facility, easy setup and operation, and low temperature operation. The practical applications of APP can be found in a wide spectrum of fields from the functionalization of material surfaces to sterilization of medical devices. In the secondary battery industry, separator film has been typically treated by APP to enhance adhesion strength between adjacent films. In this process, the plasma is required to have high stability and uniformity for better performance of the battery. Dielectric barrier discharge (DBD) was usually adopted to limit overcurrent in the plasma, and we developed the pre-discharge technology to overcome the drawbacks of streamer discharge in the conventional DBD source which makes it possible to produce a super-stable plasma at atmospheric pressure. Simulations for the fluid flow and electric field were parametrically performed to find the optimized design for the linear jet plasma source. The developed plasma source (Plasmapp LJPS-200) exhibits spatial non-uniformity of less than 3%, and the adhesion strength between the separator and electrode films was observed to increase 17% by the plasma treatment.

• Nuclear Engineering and Technology
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• v.56 no.2
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• pp.546-551
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• 2024

As an effective methods of plasma heating, neutral beam injection (NBI) systems based on negative hydrogen ion sources will be utilized in future magnetic-confinement nuclear fusion experiments. Because of the collisions between the fast negative ions and the neutral background gas, the positive ions are inevitable created in the acceleration region in the negative NBI system. These positive ions are accelerated back into the ion source and become high energy backstreaming ions. In order to explore the characters of backstreaming ions, the track and power deposition of backstreaming H⁺ beam is estimated using the experimental and simulation methods at NNBI test facility. Results show that the flux of backstreaming positive ions is 1.93 % of that of negative ion extraction from ion source, and the magnet filed in the beam source has an effect on the backstreaming positive ions propagation.

• Nuclear Engineering and Technology
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• v.56 no.4
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• pp.1145-1152
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• 2024

To realize an initial objective of the negative ion-based neutral beam injection (N-NBI) at the Comprehensive Research Facility for Fusion Technology (CRAFT) test facility, which targets an H⁰ beam power of 2 MW at an energy of 200-400 keV and a pulse duration of 100 s, it is crucial to study the cesium dynamics of the negative ion source. Here a numerical simulation program CSFC3D is developed and applied to simulate the distribution and time dynamics of cesium during short pulses. The calculations show that most of the cesium on the plasma grid (PG) area originates from the release of cesium that is accumulated within the ion source in the plasma phase. Increasing the wall temperature reduces the loss of cesium on the wall of the ion source. Furthermore, the thickness of the cesium monolayer is directly influenced by the PG temperature. Both simulated and experimental results demonstrate that maintaining the PG temperature between 180 ℃ and 200 ℃ is essential for enhancing the performance of the ion source and optimizing the cesium behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.213-213
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• 2011

DC arc plasmatron is powerful plasma source to apply etching and texturing processing. Even though DC arc plasmatron has many advantages, it is difficult to apply an industry due to the small applied area. To increase an effective processing area, we suggest a DC-RF hybrid plasma system. The DC-RF hybrid plasma system was designed and made. This system consists of a DC arc plasmatron, RF parts, reaction chamber, power feeder, gas control system and vacuum system. To investigate a DC-RF hybrid plasma, we used a Langmuir probe, OES (Optical emission spectroscopy), infrared (IR) light camera. For RF matching, PSIM software was used to simulate a current of an impedance coil. The results of Langmuir probe measurements, we obtain a homogeneous plasma density and electron temperature those are about $1{\times}1010$ #/cm3 and 1~4 eV. The DC-RF hybrid plasma source is applied for plasma etching experimental, and we obtain an etching rate of 10 ${\mu}m$/min. through a 90 mm of reaction chamber diameter.