• Title/Summary/Keyword: Plasma process

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Technical Development of Flue Gas Control at Commercial Plant Using the Non-thermal Plasma Process (저온 플라즈마 공정을 이용한 상용설비의 배연가스 처리 기술개발)

  • Yoo, J.S.;Paek, M.S.;Kim, T.H.;Kim, J.I.;Kim, Y.S.;Choi, S.H.
    • Proceedings of the KSME Conference
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    • 2001.06d
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    • pp.939-944
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    • 2001
  • For the application of simultaneous $DeSO_{2}\;&\;DeNO_{x}$ equipment using non-thermal plasma process to the industrial and power plants, the many types of plasma device and process were studied. The e-beam and pulsed plasma corona discharge process are outstanding for the study to apply commercial large-scale plant from among these. In this paper, non-thermal plasma of technical trends and the characteristics of system developed by Doosan heavy industries & construction Co., Ltd. are explained. We have researched pulsed plasma corona discharge process since 1994. At the basis of reasonable results for the pilot plant, we constructed the demonstration plant at a domestic coal-fired power plant in 1999, as the previous step for commercial use. In near future, enough information about designs and costs of commercial-size system will be obtained.

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Analysis of H-ICP Source by Noninvasive Plasma Diagnostics of Etching Process

  • Park, Kun-Joo;Kim, Min-Shik;Lee, Kwang-Min;Chae, Hee-Yeop;Lee, Hi-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.126-126
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    • 2009
  • Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

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Atmospheric Plasma Treatment on Copper for Organic Cleaning in Copper Electroplating Process: Towards Microelectronic Packaging Industry

  • Hong, Sei-Hwan;Choi, Woo-Young;Park, Jae-Hyun;Hong, Sang-Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.3
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    • pp.71-74
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    • 2009
  • Electroplated Cu is a cost efficient metallization method in microelectronic packaging applications. Typically in 3-D chip staking technology, utilizing through silicon via (TSV), electroplated Cu metallization is inevitable for the throughput as well as reducing the cost of ownership (COO).To achieve a comparable film quality to sputtering or CVD, a pre-cleaning process as well as plating process is crucial. In this research, atmospheric plasma is employed to reduce the usage of chemicals, such as trichloroethylene (TCE) and sodium hydroxide (NaHO), by substituting the chemical assisted organic cleaning process with plasma surface treatment for Cu electroplating. By employing atmospheric plasma treatment, marginally acceptable electroplating and cleaning results are achieved without the use of hazardous chemicals. The experimental results show that the substitution of the chemical process with plasma treatment is plausible from an environmentally friendly aspect. In addition, plasma treatment on immersion Sn/Cu was also performed to find out the solderability of plasma treated Sn/Cu for practical industrial applications.

Application of DBD Plasma Catalysis Hybrid Process to remove Organic Acids in Odors (악취물질인 유기산 제거를 위한 DBD 플라즈마 촉매 복합공정의 적용)

  • Hong, Eun-Gi;Suh, Jeong-Min;Choi, Kum-Chan
    • Journal of Environmental Science International
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    • v.23 no.9
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    • pp.1627-1634
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    • 2014
  • Odor control technology include absorption, adsorption, incineration and biological treatments. But, most of processes have some problems such as secondary organic acids discharge at the final odor treatment facility. In order to solve the problems for effective treatment of organic acids in odor, it is necessary to develop a new type advanced odor control technology. Some of the technology are plasma only process and plasma hybrid process as key process of the advanced technology. In this study, odor removal performance was compared DBD(Dielectric Barrier Discharge)plasma process with PCHP(plasma catalysis hybrid process) by gaseous ammonia, formaldehyde and acetic acid. Plasma only process by acetic acid obtained higher treatment efficiency above 90%, and PCHP reached its efficiency up to 96%. Acetic acid is relatively easy pollutant to control its concentration other than sulfur and nitrogen odor compounds, because it has tendency to react with water quickly. To test of the performance of DBD plasma process by applied voltage, the tests were conducted to find the dependence of experimental conditions of the applied voltage at 13 kV and 15 kV separately. With an applied voltage at 15 kV, the treatment efficiency was achieved to more higher than 13 kV from 83% to 99% on ammonia, formaldehyde and acetic acid. It seems to the odor treatment efficiency depends on the applied voltage, temperature, humidity and chemical bonding of odors.

Influence of Plasma Corrosion Resistance of Y2O3 Coated Parts by Cleaning Process (세정공정에 따른 Y2O3 코팅부품의 내플라즈마성 영향)

  • Kim, Minjoong;Shin, Jae-Soo;Yun, Ju-Young
    • Journal of the Korean institute of surface engineering
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    • v.54 no.6
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    • pp.365-370
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    • 2021
  • In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y2O3 coated parts used for semiconductor and display plasma process equipment. CF4, O2, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y2O3 was exposed to CF4 plasma, the surface changed from Y2O3 to YF3 and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF3 layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

A Study on Plasma Corrosion Resistance and Cleaning Process of Yttrium-based Materials using Atmospheric Plasma Spray Coating (Atmospheric Plasma Spray코팅을 이용한 Yttrium계 소재의 내플라즈마성 및 세정 공정에 관한 연구)

  • Kwon, Hyuksung;Kim, Minjoong;So, Jongho;Shin, Jae-Soo;Chung, Chin-Wook;Maeng, SeonJeong;Yun, Ju-Young
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.74-79
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    • 2022
  • In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y2O3 and Y3Al5O12 (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF4, O2, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H2SO4(3):H2O2(1)) to remove the defect-causing surface fluorinated film. APS-Y2O3 and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

Real-time In-situ Plasma Etch Process Monitoring for Sensor Based-Advanced Process Control

  • Ahn, Jong-Hwan;Gu, Ja-Myong;Han, Seung-Soo;Hong, Sang-Jeen
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.1
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    • pp.1-5
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    • 2011
  • To enter next process control, numerous approaches, including run-to-run (R2R) process control and fault detection and classification (FDC) have been suggested in semiconductor manufacturing industry as a facilitation of advanced process control. This paper introduces a novel type of optical plasma process monitoring system, called plasma eyes chromatic system (PECSTM) and presents its potential for the purpose of fault detection. Qualitatively comparison of optically acquired signal levels vs. process parameter modifications are successfully demonstrated, and we expect that PECSTM signal can be a useful indication of onset of process change in real-time for advanced process control (APC).

Effects of Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

  • Kim, Doo-Hyun;Kim, D.W.;Kim, K.S.;Moon, J.S.;KIM, H.J.;Kim, D.C.;Oh, K.S.;Lee, B.J.;You, S.J.;Choi, S.W.;Park, Y.C.;Kim, B.S.;Shin, J.H.;Kim, Y.M.;Shin, S.S.;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1220-1224
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    • 2007
  • The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

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The Effect of Activated Nitrogen Species for Diffusion Rate during a Plasma Nitriding Process (플라즈마질화에서 발생기 질소와 질화 속도에 관한 연구)

  • Kim, Sang-Gweon;Kim, Sung-Wan;Brand, P.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.23 no.3
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    • pp.150-155
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    • 2010
  • Generally, plasma nitriding process has composed with a nitriding layer within glow discharge region occurred by energy exchange. The dissociations of nitrogen molecules are very difficult to make neutral atoms or ionic nitrogen species via glow discharge area. However, the captured electrons in which a double-folded screen with same potential cathode can stimulate and come out some single atoms or activated ionic species. It was showed an important thing that is called "hat is a dominant component in this nitriding process?" in plasma nitriding process and it can take an effective species for without compound layer. During a plasma nitriding process, it was able to estimate with analyzing and identification by optical emission spectroscopy (OES) study. And then we can make comparative studies on the nitrogen transfer with plasma nitriding and ATONA process using plasma diagnosis and metallurgical observation. From these observations, we can understand role of active species of nitrogen, like N, $N^+$, ${N_2}^+$, ${N_2}^*$ and $NH_x$-radical, in bulk plasma of each process. And the same time, during DC plasma nitriding and other processes, the species of FeN atom or any ionic nitride species were not detected by OES analyzing.

Actinometric Investigation of In-Situ Optical Emission Spectroscopy Data in SiO2 Plasma Etch

  • Kim, Boom-Soo;Hong, Sang-Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.3
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    • pp.139-143
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    • 2012
  • Optical emission spectroscopy (OES) is often used for real-time analysis of the plasma processes. OES has been suggested as a primary plasma process monitoring tool. It has the advantage of non-invasive in-situ monitoring capability but selecting the proper wavelengths for the analysis of OES data generally relies on empirically established methods. In this paper, we propose a practical method for the selection of OES wavelength peaks for the analysis of plasma etch process and this is done by investigating reactants and by-product gas species that reside in the plasma etch chamber. Wavelength selection criteria are based on the standard deviation and correlation coefficients. Moreover, chemical actinometry is employed for the normalization of the selected wavelengths. We also present the importance of chemical actinometry of OES data for quantitative analysis of plasma. Then, the suggested OES peak selection method is employed.. This method is used to find out the reason behind abnormal etching of PR erosion during a series of $SiO_2$ etch processes using the same recipe. From the experimental verification, we convinced that OES is not only capable for real-time detection of abnormal plasma process but it is also useful for the analysis of suspicious plasma behavior.