• 대한환경공학회지
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• 제35권5호
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• pp.356-362
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• 2013

암모니아 처리용 플라즈마 스크러버 공정 최적화 연구를 수행하였다. 여러 반도체공정 중 확산과 이온주입공정에서는 불가피하게 부산물로서 암모니아가 배출되며, 따라서 효율적인 건식처리공정기술이 필요하다. 플라즈마 처리공정은 연소공정에서 배출되는 NOx가 발생하지 않으며, 촉매공정에서 나타나는 비활성문제가 없다. 그러나 전기에너지를 사용하기 때문에 실제 적용을 위한 최적화 연구가 필요하며, 본 연구에서는 공정 최적화를 위한 해결책으로 회전아크 반응기의 모드제어에 대한 연구를 수행하였다. 기존 회전아크 반응기에 대한 스케일 업 및 그에 대한 모드 매핑을 수행하였다. 설계 반응기를 이용하여 암모니아 분해특성을 평가하였고, 최적화 설계가 가능한 것으로 나타났다. 또한 열교환기를 포함한 전체 스케일의 스크러버 실험에서 암모니아 분해공정이 보다 안정적이고, 효율적인 것으로 나타났다.

• 한국재료학회지
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• 제20권4호
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

• 한국기계가공학회지
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• 제21권5호
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

• 산업기술연구
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• 제25권A호
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• pp.141-149
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• 2005

We investigated numerically the evolutions of several chemical species which are important for film growth and particle generation in the pulsed $SiH_4$ plasmas. During the plasma-on, the $SiH_x$ concentration increases with time mainly by the generation reaction from $SiH_4$, but, during the plasma-off, decreases because of the hydrogen adsorption reaction. During the plasma-on, the concentrations of negative ions increase with time by the polymerization reactions of negative ions and those become almost zero in the sheath regions because of the electrostatic repulsion. During the plasma-off, the concentrations of negative ions decrease with time by the neutralization reactions with positive ions and some negative ions can diffuse toward the sheath regions because there is no electric field inside the reactor. The polymerized negative ions of higher mass can be reduced successfully by using the pulsed plasma process.

• Journal of Welding and Joining
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• 제35권3호
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• pp.75-81
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• 2017

Recently in the welding field, the establishment of unmanned and automated systems are rapidly developing. Accurate interpretation of the welding phenomenon is applied a number of monitoring systems. In this paper, butt welding (6t) type I using Plasma-MIG welding was carried out. And we evaluated characteristics of the Al-5083 aluminium alloy in Plasma-MIG hybrid welding. Process variables including the plasma current, MIG voltage, wire feeding rate and the welding speed were used. Butt welding was conducted 1 pass. Argon gas was used as the protective gas that results from the experiment were able to achieve full penetration. In addition to monitoring the welding process occurring during MIG welding current, welding votage and Plasma current, voltage were collected in real time, the photodiode and CCD cameras observing the phenomenon that the welding is in progress were measured using a quantity of light.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.131-134
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma po1ymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV]. ranging the dose of 1∼500[${\mu}$C/$\textrm{cm}^2$], the pattern was developed with dry tree and formed by plasma etching. By analysing of the molecule structure using FT-lR, it was confirmed that the thin films of PPMST contains the functional radicals of the MST monomer. The thin films of PPMST had a highly crosslinked structure resulting in a higher molecule weight than the conventional resist.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.543-544
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• 2008

In the fabrication of inverted top emission organic light emitting diodes (ITOLEDs), the organic layers are damaged by high-energy plasma sputtering process for transparent top anode. In this study, the plasma process induced damages on metal oxide hole injection layers (HILs) including $WO_3$, $MoO_3$, and $V_2O_5$ as buffer layer are examined. With the result of IV characteristic of hole-only devices, we propose that $MoO_3$ and $V_2O_5$ are stable materials against plasma sputtering process.

• 한국표면공학회지
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• 제29권1호
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• pp.45-59
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• 1996

Ultrafine powders(UFPs) of aluminum nitride(AlN) have been synthesized by chemical reactions in the nitrogen atmosphere and the gaseous aluminum evaporated from Al powders in thermal plasmas produced by a DC plasma torch. A synthesis system consisting of a plasma torch, a finely-controllable powder feeder, a reaction chamber, and a quenching-collection chamber have been designed and manufactured, and a filter for gathering AlN UFPs produced by the quenching process subsequent to the synthesis is set up. The synthesis process is interpreted by numerical analyses of the plasma-particle interaction and the chemical equilibrium state, respectively, and a fully-saturated fractional factorial test is used to find the optimum process conditions. The degrees and ultrafineness of synthesis are evaluated by means of SEM, TEM, XRD, and ESCA analyses. AlN UFPs synthesized in the optimum process conditions have polygonal shapes of the size of 5-100 nm, and their purities differ depending on collecting positions and filter types, and the maximum purity obtained is 72 wt% at the filter.

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.52-55
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• 2024

In this paper, a state change study was conducted through Frequency Domain Reflectometry (FDR) technology for the process chamber of plasma equipment for semiconductor manufacturing. In the experiment, by direct connecting the network analyzer to the RF matcher input of the 300 mm plasma enhanced chemical vapor deposition (PECVD) chamber, S11 was measured in a situation where plasma was not applied, and the frequency domain reacting to the chamber state change was searched. Response factors to changes in the status, such as temperature, spacing of the heating chuck, internal pressure difference, and process gas supply state were confirmed. Through this, the frequency domain in which a change in the reflection value was detected through repeated experiments. The reliability of the measured micro-displacement was verified through reproducibility experiments.

• 한국연소학회지
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• 제12권4호
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• pp.39-46
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• 2007

The technique of $NH_3$ SCR (selective catalytic reduction) assisted by plasma oxidation has been applied to a 2,000 cc diesel engine. The present combined $deNO_x$ process consists of two steps. The first step is that about 50% of emitted NO from the engine is oxidized to $NO_2$ in a plasma oxidation process. The second step is that NO and $NO_2$ are simultaneously reduced to $N_2$ in the $NH_3$ SCR process. The engine test results showed that the $deNO_x$ rates of the present combined process are higher than those of conventional SCR process by 20%. Such a high performance of the combined process is noticeable especially, when the exhaust temperature are relatively low, i.e., $170-220^{\circ}C$. To provide a feasibility of the present technique the effects of operating conditions, such as an electrical input energy, an exhaust gas temperature, an initial NO concentration, and the amount of hydrocarbon addition, were discussed.