• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.101_102
• /
• 2009

KSTAR(Korea Superconducting Tokamak Advanced Reseach)장치는 차세대핵융합연구장치로써 30개의 초전도자석으로 구성된다. 이 초전도자석에 전원을 공급하게 되는 PF (Poloidal Field) MPS(Magnet Power Supply)는 12상 Pulse 운전을 하게 되는데 이때 $h=kp{\pm}1$의 특성고조파와 90%에 가까운 무효전력이 발생되어 KSTAR 전력계통과 인근 부하장치에 치명적인 영향을 줄 수 있어 고조파와 무효전력을 동시에 보상할 수 있는 최적의 무효전력보상장치의 도입은 필연적이다. 본 논문에서는 KSTAR 1st Plasma 실험시의 무효전력과 고조파를 저감하기 위해 설치했던 즉, 1단계 기계식 스위칭에 의한 RPC(Reactive power compensator)의 보상특성의 평가결과를 기반으로 KSTAR 2009년 Plasma 실험에 대비하여 이의 운전특성과 설치 공간에 따르는 제약 등을 고려하여 최적의 RPC 설계를 도출하기 위해 실시한 TSC(Thyristor Switch Capacitor)기반의 RPC[1] 모의해석 결과와 기술적 사항을 소개하고자 한다.

• 전력전자학회논문지
• /
• 제10권2호
• /
• pp.177-185
• /
• 2005

기존의 비대칭 하프브릿지 컨버터로부터 변형된 새로운 고효율 DC/DC 컨버터를 제안한다. 제안된 컨버터는 기존의 비대칭 하프브릿지 컨버터와 비교하여 넓은 ZVS영역을 가지므로 넓은 부하 범위에 걸쳐서 높은 효율을 자랑한다. 본 논문에서는 기존의 하프브릿지 컨버터와 비교하여 제안된 컨버터의 기본동작 및 특성을 분석하였으며, PDP TV 유지전원단 사양의 425W, 385-170Vdc 시험모델을 제작하여 실험결과를 통하여 제안된 컨버터의 우수성을 입증하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 하계학술대회 논문집 C
• /
• pp.1719-1721
• /
• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of Ar gas pressure. The RF output was applied in the range of 5-50W at 13.56MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100V ${\sim}$ +100V. When the pressure of Ar gas was increased, electric current was decreased. There was a significant electric current increase when the applied RF power was increased from 10 W to 30 W. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• 산업식품공학
• /
• 제15권4호
• /
• pp.398-403
• /
• 2011

비열살균기술로서 저온플라즈마 활용 가능성을 탐색하고자 유전체장벽 방전 플라즈마(DBDP)생성장치를 제작하여 최적 플라즈마생성 조건을 도출하고 Staphyloocus aureus를 대상으로 살균성능을 조사하였다. DBDP생성장치는 전력공급장치, 변압기, 전극, 시료처리부 등 네 부분으로 구성하였다. 인가전압은 단상 200 V AC를 사용하고, 변압기를 통하여 10.0-50.0 kV로 변환하고 10.0-50.0 kHz의 주파수의 펄스 구형파를 유전체인 세라믹 블록 내에 장치한 전극에 투입함으로써 상압에서 플라즈마를 생성하였다. 주파수를 올림에 따라 높은 전류가 유입되었고, 이에 비례하여 전력소비량이 증가하였다. 전류세기 1.0-2.0 A, 주파수32.0-35.3 kHz 범위에서 균일하고 안정적인 플라즈마 발생이 이루어졌으며 시료를 투입하지 않은 상태에서의 최적 전극간격은 1.85 mm 이었다. 전극간격을 높임에 따라 소비전력이 증가하였으나 시료 처리에 적합한 전극간격은 2.65 mm였다. DBDP 처리에 의한 온도상승은 최대 20$^{\circ}C$에 불과하여 열에 의한 생물학적 효과는 무시할 수 있었으며 따라서 비열기술임이 확인되었다. Staphyloocus aureus를 대상으로 DBDP 처리할 경우 초기 5분 동안은 살균치가 직선적인 증가를 보이다가 이후 다소 완만해지는 경향을 보였으며 1.25 A에서 10분간 처리 시 살균치는 5.0을 상회하였다.

• 한국환경과학회지
• /
• 제27권8호
• /
• pp.621-629
• /
• 2018

Many chemically active species such as ${\cdot}H$, ${\cdot}OH$, $O_3$, $H_2O_2$, hydrated $e^-$, as well as ultraviolet rays, are produced by Dielectric Barrier Discharge (DBD) plasma in water and are widely use to remove non-biodegradable materials and deactivate microorganisms. As the plasma gas containing chemically active species that is generated from the plasma reaction has a short lifetime and low solubility in water, increasing the dissolution rate of this gas is an important challenge. To this end, the plasma gas and water within reactor were mixed using the air-automizing nozzle, and then, water-gas mixture was injected into water. The dissolving effect of plasma gas was indirectly confirmed by measuring the RNO (N-Dimethyl-4-nitrosoaniline, indicator of the formation of OH radical) solution. The plasma system consisted of an oxygen generator, a high-voltage power supply, a plasma generator and a liquid-gas mixing reactor. Experiments were conducted to examine the effects of location of air-automizing nozzle, flow rate of plasma gas, water circulation rate, and high-voltage on RNO degradation. The experimental results showed that the RNO removal efficiency of the air-automizing nozzle is 29.8% higher than the conventional diffuser. The nozzle position from water surface was not considered to be a major factor in the design and operation of the plasma reactor. The plasma gas flow rate and water circulation rate with the highest RNO removal rate were 3.5 L/min and 1.5 L/min, respectively. The ratio of the plasma gas flow rate to the water circulation rate for obtaining an RNO removal rate of over 95% was 1.67 ~ 4.00.

• Journal of Electrical Engineering and Technology
• /
• 제1권2호
• /
• pp.216-225
• /
• 2006

This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2015년도 제46회 하계학술대회
• /
• pp.1283-1284
• /
• 2015

본 논문에서는 무전극 플라즈마 광원 장치가 무선기기와의 간섭을 최소화하기 위해 협대역 초고주파 발진을 일으키기 위한 전원 개발을 논의한다.

• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 1996년도 추계학술발표회논문집
• /
• pp.104-108
• /
• 1996

This paper deals with the design considerations and characteristics analysis of a SCR rectifier in pulsed over load operation. The Pulse repetition rate is one every 150 seconds and each current pulse width is 10 seconds. Therefore the characteristics of the transformer and SCR rectifier which consist the pulsed DC power supply are different from those of the conventional AC/DC power converters having continuous load. The variations of the DC output voltage drop, PF and THD versus the %Z of the transformer is analyzed through simulations and the experimental results thought to be useful in design high power pulsed DC power suppler.

• Journal of Power Electronics
• /
• 제12권6호
• /
• pp.878-885
• /
• 2012

A new sustainer with primary-side integration of DC/DC converters and energy recovery(SPIDER) circuits is proposed. The proposed circuit operates as a DC-DC converter during address period and energy recovery circuit during sustain period. Therefore, the conventional three electronic circuits composed of the power supply, X-driver, and Y-driver can be reduced to one circuit. As a result, it has desirable advantages such as a simple structure, less mass, fewer devices and cost reduction. Moreover, since the Zero Voltage Switching (ZVS) of all power switches can be guaranteed, a switching loss can be considerably decreased. To confirm the operation, validity, and features of the proposed circuit, experimental results from a prototype for 42-inch PDP are presented.

• 한국전기전자재료학회논문지
• /
• 제33권5호
• /
• pp.344-349
• /
• 2020

Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.