• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05b
• /
• pp.41-45
• /
• 2005

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma(ICP). In results at several dependences of 20~100 mTorr Xenon pressure, 50~200W RF power and horizontal distribution were especially mentioned. When Xe pressure was 20mTorr and RF power was 200W, the electron temperature and density were respectively 3.58eV and $3.56{\times}10^{12}cm^{-3}$. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.45 no.3
• /
• pp.426-431
• /
• 1996

It is well known that the understanding of the complex mechanism of magnetoplasma is closely related with understanding of the collective behavior of discharge plasma parameters such as the cathode-sheath potential, cathode-sheath thickness, electron temperature, electron density, and ambipolar diffusion. In this paper, some of the relationships between these plasma parameters and magnetic field is investigated experimentally with a Langmuir probe in the magnetoplasma generated by D.C diode system. It is found that when magnetic field is increased, cathode-sheath potential, cathode-sheath thickness, and ambipolar diffusion are decreased. In addition, peak ion density obtained as a parameter of ionic signal voltage by Faraday cup method is independent of magnetic field. (author). 9 refs., 11 figs.,1 tab.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.12a
• /
• pp.43-47
• /
• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• Electrical & Electronic Materials
• /
• v.15 no.9
• /
• pp.10-14
• /
• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

• Journal of the Korean institute of surface engineering
• /
• v.42 no.5
• /
• pp.208-215
• /
• 2009

We employed atmospheric plasma to reactively remove the lubricant sprayed onto such industrial electronic parts as LCD chassis during sheet-metal forming processes and investigated basically the effect of plasma parameters on cleansing the surfaces of zinc-electroplated steel plates (EGI). Specimen prepared with some controlled amount of lubricant sprayed on their surfaces beforehand were subjected to two different kinds of atmospheric plasma, one being generated by using air and the other generated by using nitrogen (99.9% purity). Locating the plasma beams at the height range between 3.5 and 13.5 mm from the surface of each specimen and radiating for 5 to 30 seconds resulted out that the cases with a position of 3.5 mm and a duration of 5 seconds or longer showed the surfaces completely cleansed without a trace of lubricant. Furthermore we found out that the plasma generated by using simple air depicted higher cleansing ability than the other one generated by using expensive nitrogen, interestingly useful very much for industrial purposes. On another aspect, we confirmed that the drilled or cut surfaces of Zn-plated steel substrate would not be oxidized even under the influence of plasma during its cleansing process. Therefore, we could probably conclude from this fore-survey that a dry process adopting atmospheric plasma for cleansing industrial parts might be determined to become successful in terms of commercialization, cautiously.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.274-274
• /
• 2012

We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

• Journal of Welding and Joining
• /
• v.32 no.1
• /
• pp.28-33
• /
• 2014

In this paper, I-butt welding with 6mm thickness using Plasma-GMA welding was carried out. And weld characteristics of the Al-5083 aluminium alloy for Plasma-GMA hybrid welding was evaluated. The orthogonal experimental design was used to investigate the influence of plasma-MIG welding parameters such as plasma current, wire feeding rate, MIG-welding voltage and welding speed on the weld bead geometry and tensile strength using the ANOVA(Analysis of Variation). Then we conducted evaluation of contribution for process parameters. ANOVA results show that bead dimensions are affected by wire feeding speed, welding voltage and welding speed and tensile strength is mainly affected by welding speed and plasma arc current. Tensile strength was decreased by rise in plasma welding current because GMA welding current was decreased by plasma arc.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.4
• /
• pp.156-162
• /
• 2008

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

• Journal of the Korean Society for Heat Treatment
• /
• v.22 no.4
• /
• pp.223-227
• /
• 2009

The feasibility of plasma electrolytic polishing technology of stainless steel was examined. The results show that austenitic stainless steel can be polished clearly using potentiostatic regimes with various concentration of ammonium sulfate ($(NH_4)_2SO_4$) solution above certain initial temperature. The equipment and deposition produces for polishing process are described and the effect of processing parameters on the characterizations polished-samples has been investigated.

• Journal of the Speleological Society of Korea
• /
• no.78
• /
• pp.29-31
• /
• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.