• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1815-1817
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• 2000

Plasma display Panels(PDPs) are one of the leading technologies currently under development for large-area high-brightness flat panel displays. However, the luminance and luminous efficiency of at PDPs should be improved. Especially, one of the main factors affecting on the luminance and luminous efficiency of ac PDP may be the phosphor thickness and size of discharge space. In this study, we examined into addressing time, electrical and optical properties as a parameter of the phosphor thickness and the size of discharge space during the display period of ac PDP. It is found out that the optimum phosphor thickness was $50{\mu}m$ and height of discharge space was about $100{\mu}m$.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.509-513
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• 2003

In the present investigation, $La^{3＋}$ and $Ce^{V}$ ions were substituted for $Y^{3＋}$ in the $YBO_3$: Tb in various concentrations. It has been found that these phosphors form solid solutions within limited concentration ranges Excitation and emission spectra under 254 nm and 147 nm were investigated for these phosphors to evaluate influences of $La^{3＋}$ and $Ce^{3＋}$ ions on brightness and CIE color coordinates. It has been observed that brightness of $(Y, La)BO_3$: Tb under 254 nm and 147 nm when $La^{3＋}$ ions are added show an increase of 2.7 times and 1.25 times, respectively. On the other hand, emission intensities of peaks in $Y_{0.8-x}$ $BO_3$: $Tb_{0.2}$ , $Ce_{x}$ show continuos decrease as $Ce^{3＋}$ / content is increased from 0 to 0.4. CIE color coordinates of prepared phosphors show yellowish green which is needed to be improved to be used for display applications.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1406-1407
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• 2007

본 논문에서 제안한 ac-PDP(Plasma display panel) 셀구조는 Long gap의 전극 사이에 보조 전극을 삽입한 구조이다. 일반적으로, long gap 구조를 가진 PDP cell은 높은 방전 개시 전압을 가지므로, Long gap 전극 사이에 보조전극을 삽입하여 방전 개시 전압을 낮춤과 동시에 휘도 상승, 소비 전력의 감소효과로 발광효율의 향상을 가져왔다. 제안한 구조의 구동을 위하여 asymmetric mode와 long gap mode라는 2가지 파형을 가지고 실험하였다. 두 파형은 공통적으로 기존의 ADS(Address and Display period Separated)파형을 Y(Scan), Z(Common), A(Address) 전극에 인가하였으며, 보조적극에는 Z(Common) 전극의 파형을 수정한 형태로 인가하였다. Asymmetric mode는 보조전극에 Z(Common) 전극에 인가되는 파형과 같은 형태의 파형을 인가하여 Long gap의 구조를 가지지만 Short gap에서 방전이 가능하도록 설계하였고, long gap mode는 보조전극에 인가되는 Z(Common) 파형 중 sustain pulse를 초기 3개만을 주어 Short gap에서 방전을 개시함과 동시에 priming 입자를 생성하고, 나머지 sustain 구간에서는 floating시켜 이미 생성된 priming 입자를 long gap에서 구동을 가능하도록 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1788-1790
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• 1998

The dielectric layers in AC plasma display panel(AC PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric strength and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric strength and transparency of the dielectric layer under various conditions. As a result, on the $15{\mu}m$ thickness, the minimum dielectric strength was $29V/{\mu}m$ and the transmittance coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15{\mu}m$ because it has about 80V margin on the maximum applied voltage.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.33-37
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• 2006

For producing the fine ribs structure of plasma display panel, the metal ions of barrier materials during the etching process should be understood on the etching mechanism with etching conditions. Etching was done on bulk glasses of the $BaO_B_2O_3-ZnO$ system with $HNO_3$ solution at $40^{\circ}C$. The surface structure of glasses and ion dissolution were analyzed by ICP (Inductive Coupled Plasma measurement). The structure and surface of the etched bulk glass were investigated by using scanning electron microscopy and nanoindenter. As a result, Ba (3-35 ppm/min) and Zn (2-27 ppm/min) ions as major components were leached in the solution and the leached layers were found to be phosphor-rich surface layers. A decrease of the bridge oxygen and relative increase of non bridge oxygen in the etched glass were found by X-ray photoelectron spectroscopy.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.231-231
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• 1999

PDP(Plasma Display Panel)는 21세기 디스플레이 시장을 대체할 차세대 디스플레이 장치로서 넓은 시야각, 얇고, 가볍고, 메모리기능이 있다는 여러 가지 장점들을 가지고 있지만 현재 고휘도, 고효율, 저소비전력 등의 문제점들을 해결하여야 한다. 이러한 문제점들의 해결을 위해서는 명확한 미세방전 PDP 플라즈마에 대한 정확한 진단 및 해석이 필요하다. 따라서 본 연구에서는 미세 면방전 AC-PDP 플라즈마의 기초 변수들 (플라즈마 밀도 & 온도, 플라즈마 뜬 전위, 플라즈마 전위 등의 측정을 통해 고휘도, 고효율 PDP를 위한 최적의 방전환경을 알아내는 데 있다. 일반적으로 전자의 밀도는 방전전류에 비례하는 관계를 보인다. 전류에 대해 방전전압이 일정하다면 전자밀도가 커짐에 따라서 휘도는 포화되며 상대적으로 휘도와 전류의 비로 표시되는 발광효율은 감소하게 된다. 반면 전자밀도가 상당히 작다면 휘도는 전자밀도에 비례하고 효율은 최대값을 보인다. 따라서 미세구조 PDP에서 휘도와 발광효율, 양쪽에 부합하는 최적의 방전환경을 플라즈마 전자밀도와 온도의 측정을 통해서 해석하는 것이 필요하다. 본 실험에서는 방전기체의 종류와 Ne+Xe 방전기체의 조성비에 따른 플라즈마 밀도, 온도의 공간적인 분포특성을 진단하기 위해서 초미세 랑뮈에 탐침(지름: 수 $mu extrm{m}$)을 제작하였다. 제작된 초미세 탐침을 컴퓨터로 제어되는 스텝핑모터를 장착한 정밀 X, Y, Z stage에 부착하여서 수 $\mu\textrm{m}$간격의 탐침 삽입위치에 따라서 미세면방전 AC-PDP의 플라즈마 밀도 및 온도분포 특성을 진단하였다. PDP 방전공간에 초미세 랑뮈에 탐침을 삽입해서 -200~+200V의 바이어스 전압을 가해준다. 음의 바이어스 전압구간에서 이온 포화전류를 얻어내어 여기서 플라즈마 이온 밀도를 측정하고 양의 바이어스 전압구간에서 플라즈마 전자온도를 측정하면 미세면방전 AC-PDP 플라즈마의 기초 진단이 가능하다.