• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.1
• /
• pp.1-7
• /
• 2007

In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.328-331
• /
• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• Journal of Powder Materials
• /
• v.4 no.4
• /
• pp.268-274
• /
• 1997

Characteristics of plasma nitriding and nitrocarburizing for steam treated sintered steels were studied. Fe-0.8%C powder containing Ni, Cu were sintered at 112$0^{\circ}C$ and steamed at 52$0^{\circ}C$. Temperature of plasma nitriding and nitrocarburizing was varied from 50$0^{\circ}C$ to $600^{\circ}C$. Gas mixture of nitriding was set at $N_2$ : $H_2$ =80:20 (vol.%), but $CH_4gas$ was added 1~2 vol.% for nitrocarburizing. Steam treatment for sintered steels brought not only the formation of oxide layer but also decarburizing near the surface. Decrease in hardness near the surface resulted from the formation of ferrite due to decarburizing. Thus, the low hardness was recovered not with plasma nitriding but with plasma nitrocarburixing. Wear resistance properties of steamed specimens and ni-trocarburized specimens were better than those of nitrided specimens according to the pin-on-disk wear test. On the other hand, the fatigue life of steamed specimen was shorter than that of nitrocaiburized specimen.

• Applied Science and Convergence Technology
• /
• v.26 no.5
• /
• pp.133-138
• /
• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Corrosion Science and Technology
• /
• v.22 no.4
• /
• pp.221-231
• /
• 2023

Interest in aluminum alloys for the hydrogen valves of fuel cell electric vehicles (FCEVs) is growing due to the reduction in fuel efficiency by the high weight. However, when an aluminum alloy is used, deterioration in mechanical characteristics caused by hydrogen embrittlement and wear is regarded as a problem. In this investigation, the aluminum alloy used to prevent hydrogen embrittlement was subjected to surface treatments by performing hard anodizing and plasma ion nitriding processes. The hard anodized Al alloy exhibited brittleness in which the mechanical characteristics rapidly deteriorated due to porosity and defects of surface, resulting in a decrease in the ultimate tensile strength and modulus of toughness by 15.58 and 42.51%, respectively, as the hydrogen charging time increased from 0 to 96 hours. In contrast, no distinct nitriding layer in the plasma ion-nitrided Al alloy was observed due to oxide film formation and processing conditions. However, compared to 0 and 96 hours of hydrogen charging time, the ultimate tensile strength and modulus of toughness decreased by 7.54 and 13.32%, respectively, presenting excellent resistance to hydrogen embrittlement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.45-46
• /
• 2009

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with thin (${\approx}10\;nm$) Inductive-Coupled Plasma (ICP) CVD $Si_xN_y$ dielectric layers and investigated electrical properties of nitrided $SiO_2$/4H-SiC interface after oxidizing the $Si_xN_y$ in dry oxidation and/or $N_2$ annealing. An improvement of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements if compared with non-annealed oxidized-SiN. The improvements of SiC MOS capacitors formed by oxidized-SiN have been explained in this paper.