• 제목/요약/키워드: Plasma modeling

검색결과 215건 처리시간 0.026초

Optical Characteristics of a Flexible Back-Light Unit with Plasma Discharge Clusters

  • Goo, Gyo-Uk;Ryu, Si-Hong;Lee, Seung-Eui;Ahn, Sung-Il
    • Transactions on Electrical and Electronic Materials
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    • 제12권5호
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    • pp.189-192
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    • 2011
  • A flexible back-light unit (FBLU) is fabricated by embedding plasma discharge clusters in a flexible polymer matrix. The brightness uniformity of an FBLU was measured for various combinations of optical sheets and compared with the simulated results for various bending angles. A gap between light sources causes distinctive integrated brightness curves which have two inflection points depending on bending angle. The brightness distribution of a simulated BLU was in good agreement with that of an actual plasma BLU except for a dark area that appeared at the center of the simulated BLU. The real and simulated BLUs both clearly showed an angle dependency caused by mirror images located between point light sources. On the basis of these results, it is suggested that these mirror-like images could be a major factor in determining the characteristics of FBLUs.

유도결합 플라즈마를 이용한 BST 박막의 식각 특성 및 모델링 (Etching characteristics and modeling of BST thin films using inductively coupled plasma)

  • 김관하;김경태;김동표;이철인;김태형;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.29-32
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    • 2004
  • This work was devoted to an investigation of etching mechanisms for $(Ba,Sr)TiO_3$ (BST) thin films in inductively coupled $CF_4/Ar$ plasma. We have found that an increase of the Ar content in $CF_4/Ar$ plasma causes non-monotonic behavior of BST etch rate, which reaches a maximum value of 40 nm/min at 80% Ar. Langmuir probe measurements show a weak sensitivity of both electron temperature and electron density to the change of $CF_5/Ar$ mixing ratio. O-D model for plasma chemistry gave monotonic changes of both volume densities and fluxes for active species responsible for the etching process. The analysis of surface kinetics confirms the possibility of non-monotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.

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EPD 신호궤적을 이용한 개별 웨이퍼간 이상검출에 관한 연구 (A Study on Wafer to Wafer Malfunction Detection using End Point Detection(EPD) Signal)

  • 이석주;차상엽;최순혁;고택범;우광방
    • 제어로봇시스템학회논문지
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    • 제4권4호
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    • pp.506-516
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    • 1998
  • In this paper, an algorithm is proposed to detect the malfunction of plasma-etching characteristics using EPD signal trajectories. EPD signal trajectories offer many information on plasma-etching process state, so they must be considered as the most important data sets to predict the wafer states in plasma-etching process. A recent work has shown that EPD signal trajectories were successfully incorporated into process modeling through critical parameter extraction, but this method consumes much effort and time. So Principal component analysis(PCA) can be applied. PCA is the linear transformation algorithm which converts correlated high-dimensional data sets to uncorrelated low-dimensional data sets. Based on this reason neural network model can improve its performance and convergence speed when it uses the features which are extracted from raw EPD signals by PCA. Wafer-state variables, Critical Dimension(CD) and uniformity can be estimated by simulation using neural network model into which EPD signals are incorporated. After CD and uniformity values are predicted, proposed algorithm determines whether malfunction values are produced or not. If malfunction values arise, the etching process is stopped immediately. As a result, through simulation, we can keep the abnormal state of etching process from propagating into the next run. All the procedures of this algorithm can be performed on-line, i.e. wafer to wafer.

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플라즈마 처리와 결합된 Cu 촉매반응 화학기상증착법의 메커니즘과 고종횡비 패턴의 충진양상 전산모사에 대한 연구 (Study on the Mechanism and Modeling for Super-filling of High-Aspect-Ratio Features with Copper by Catalyst Enhanced Chemical Vapor Deposition Coupled with Plasma Treatment)

  • 김창규;이도선;이원종
    • 대한금속재료학회지
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    • 제49권4호
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    • pp.334-341
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    • 2011
  • The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

Optimization of Atmospheric Cold Plasma Treatment with Different Gases for Reduction of Escherichia coli in Wheat Flour

  • Lee, Jeongmin;Park, Seul-Ki;Korber, Darren;Baik, Oon-Doo
    • Journal of Microbiology and Biotechnology
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    • 제32권6호
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    • pp.768-775
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    • 2022
  • In this study we aimed to derive the response surface models for Escherichia coli reduction in wheat flour using atmospheric cold plasma (ACP) with three types of gas. The jet-type atmospheric cold plasma wand system was used with a 30 W power supply, and three gases (argon, air, and nitrogen) were applied as the treatment gas. The operating parameters for process optimization considered were wheat flour mass (g), treatment time (min), and gas flow rate (L/min). The wheat flour samples were artificially contaminated with E. coli at a concentration of 9.25 ± 0.74 log CFU/g. ACP treatments with argon, air, and nitrogen resulted in 2.66, 4.21, and 5.55 log CFU/g reduction of E. coli, respectively, in wheat flour under optimized conditions. The optimized conditions to reduce E. coli were 0.5 g of the flour mass, 15 min of treatment time, and 0.20 L/min of nitrogen gas flow rate, and the predicted highest reduction level from modeling was 5.63 log CFU/g.

GPU Based Feature Profile Simulation for Deep Contact Hole Etching in Fluorocarbon Plasma

  • Im, Yeon-Ho;Chang, Won-Seok;Choi, Kwang-Sung;Yu, Dong-Hun;Cho, Deog-Gyun;Yook, Yeong-Geun;Chun, Poo-Reum;Lee, Se-A;Kim, Jin-Tae;Kwon, Deuk-Chul;Yoon, Jung-Sik;Kim3, Dae-Woong;You, Shin-Jae
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.80-81
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    • 2012
  • Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

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플라즈마 분사 처리에 의한 Cr2O3 조립분말의 구상화에 대한 연구 (Spherodization of Granuled Cr2O3 Fine Ceramic Powder by Plasma Spray)

  • 이동원;이학성;유지훈;왕제필
    • 자원리싸이클링
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    • 제25권6호
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    • pp.92-97
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    • 2016
  • Spray dried $Cr_2O_3$ 분말은 겉보기밀도를 향상시키기 위해 plasma flame에 투입하여 실험을 진행 하였다. 첫번째 고밀도화 공정에서의 분말은 입자내부 공간까지 완전히 용해되어지지 않았으며, 두번째 공정 이후 완전히 용해가 되었다. 두번째 공정 결과 분말 입도는 작아졌으며, 용해 및 표면 연화에 의해 겉보기 밀도와 유동도는 향상이 되었다. 두번째 고밀도화 공정이 후 부분적으로 입자들이 $30{\mu}m$ 이상의 hollow structure을 보여주고 있다. 분말의 이러한 고밀도화는 plasma flame에 의해 응집되어진 응집체내의 열전도율 및 내부 가스압의 관점에서 정량적으로 논의 하였다.

Pharmacokinetic-Pharmacodynamic Modeling for the Relationship between Glucose-Lowering Effect and Plasma Concentration of Metformin in Volunteers

  • Lee, Shin-Hwa;Kwon, Kwang-il
    • Archives of Pharmacal Research
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    • 제27권7호
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    • pp.806-810
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    • 2004
  • Metformin is a biguanide antihyperglycemic agent often used for the treatment of non-insulin dependent diabetics (NIDDM). In this study, the pharmacokinetics and pharmacodynamics of metformin were investigated in Korean healthy volunteers during a fasting state for over 10 h. In order to evaluate the amount of glucose-lowering effect of metformin, the plasma concentrations of glucose were measured for a period of 10 h followed by the administration of metformin (oral 500 mg) or placebo. In addition, the concentration of metformin in blood samples was determined by HPLC assay for the drug. All volunteers were consumed with 12 g of white sugar 10 minutes after drug intake to maintain initial plasma glucose concentration. The time courses of the plasma concentration of metformin and the glucose-lowering effect were analyzed by nonlinear regression analysis. The estimated $C_{max}$, $T_{max}$, $CL_{t}$/F (apparent clearance), V/F(apparent volume of distribution), and half-life of metformin were 1.42$\{pm}$0.07 $\mu\textrm{g}$/mL, 2.59$\{pm}$0.18h, 66.12$\{pm}$4.6 L/h, 26.63 L, and 1.54 h respectively. Since a significant counterclock-wise hysteresis was found for the metformin concentration in the plasma-effect relationship, indirect response model was used to evaluate pharmacodynamic parameters for metformin. The mean concentration at half-maximum inhibition $IC_{50}$, $k_{in}$, $k_{out}$ were 2.26 $\mu\textrm{g}$/mL, 83.26 $H^{-1}$, and 0.68 $H^{-1}$, respectively. Therefore, the pharmacokinetic-pharmacodynamic model may be useful in the description for the relationship between plasma concentration of metformin and its glucose-lowering effect.

Prediction of Pharmacokinetics and Penetration of Moxifloxacin in Human with Intra-Abdominal Infection Based on Extrapolated PBPK Model

  • Zhu, LiQin;Yang, JianWei;Zhang, Yuan;Wang, YongMing;Zhang, JianLei;Zhao, YuanYuan;Dong, WeiLin
    • The Korean Journal of Physiology and Pharmacology
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    • 제19권2호
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    • pp.99-104
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    • 2015
  • The aim of this study is to develop a physiologically based pharmacokinetic (PBPK) model in intra-abdominal infected rats, and extrapolate it to human to predict moxifloxacin pharmacokinetics profiles in various tissues in intra-abdominal infected human. 12 male rats with intra- abdominal infections, induced by Escherichia coli, received a single dose of 40 mg/kg body weight of moxifloxacin. Blood plasma was collected at 5, 10, 20, 30, 60, 120, 240, 480, 1440 min after drug injection. A PBPK model was developed in rats and extrapolated to human using GastroPlus software. The predictions were assessed by comparing predictions and observations. In the plasma concentration versus time profile of moxifloxcinin rats, $C_{max}$ was $11.151{\mu}g/mL$ at 5 min after the intravenous injection and $t_{1/2}$ was 2.936 h. Plasma concentration and kinetics in human were predicted and compared with observed datas. Moxifloxacin penetrated and accumulated with high concentrations in redmarrow, lung, skin, heart, liver, kidney, spleen, muscle tissues in human with intra-abdominal infection. The predicted tissue to plasma concentration ratios in abdominal viscera were between 1.1 and 2.2. When rat plasma concentrations were known, extrapolation of a PBPK model was a method to predict drug pharmacokinetics and penetration in human. Moxifloxacin has a good penetration into liver, kidney, spleen, as well as other tissues in intra-abdominal infected human. Close monitoring are necessary when using moxifloxacin due to its high concentration distribution. This pathological model extrapolation may provide reference to the PK/PD study of antibacterial agents.

KSTAR 토카막 기본운전을 위한 연료주입 모의실험 (Simulation on the gas fueling for the base operation of the KSTAR tokamak)

  • 인상렬;김태성;정승호
    • 한국진공학회지
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    • 제16권6호
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    • pp.489-495
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    • 2007
  • KSTAR 토카막은 현재 주장치 조립을 완료하고 "최초 플라즈마" 발생과 시운전을 준비하고 있다. 이를 위해 설치되어 있는 연료주입계는 배기 덕트 반대 쪽 한 곳만 주입구로 사용하기 때문에 균일하고 신속한 입자공급이 어렵다. 시운전이 끝나고 기본운전 단계가 되면 단순한 플라즈마 생성이 아니라 일정한 고밀도 토카막플라즈마 상태를 일정시간 고르게 유지해야 하므로 공간적으로 균일한 입자공급과 플라즈마 밀도 변화에 따른 신속한 제어가 가능한 연료공급계로 개선되어야 한다. 이런 개선점을 찾는 작업의 일환으로 우선 D-형 진공용기 및 플라즈마 컬럼을 사각단면 토러스로 묘사하는 모델을 만들고 연료공급 위치와 플라즈마의 전리율 및 배기확률에 따라 공간적인 입자분포가 어떻게 바뀌는지 몬테카를로 계산을 통해 분석했다.