• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.105-109
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• 2019

Plasmons have conductive properties using the effect of amplifying magnetic and electric fields around metal particles. The collective movement of free electrons in metal particles induces and produces the generation of plasmon. Because the plasmon is concentrated on the surface of the nanoparticles, it is also called the surface plasmon. The polarizing effect of plasma on the surface is similar to the principle of surface currents occurring in insulators. In this study, it was found the conditions under which plasma is produced in SiOC insulators and studied the electrical properties of SiOC insulators that are improved in conductivity by plasmons. Due to the heat treatment temperature of thin film, plasma formation was shown differently, metal particles were used with normal aluminium, SiOC thin films were treated with heat at 60 degrees, conductivity was improved dramatically, and heat treatment at higher temperatures was found to be less conductivity.

• 한국재료학회지
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• 제9권6호
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• pp.604-608
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• 1999

Semiconductor industry requires the development of new technology such as 300 mm technology, suitable for manufacturing the next generation dervices. A promising process for realizing 300 mm technology can be achieved by using enlarged microwave plasma chemical vapor deposition (MWCVD) technology. In this work, we used radial line slot antenna for enlarging microwave plasma area, and carried ut the deposition of polysilicon films using enlarged MWCVD for the first time in Korea. The results was as follows. Deposited polysilicon films showed various degrees of crystallinity as well as epitaxy to silicon substrates even at low temperature of $300^{\circ}C$. Deposition rates also controled crystallization behavior and slo deposition rates showed very high crystallinity. It could be said that enlarged MWCVD system and technology was worth to get attraction as one os future technologies for 1 G DRAM era.

• 한국안전학회지
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• 제15권3호
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• pp.66-70
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• 2000

In order to cope with environmental problems caused by harmful gases emitted from various industrial sources, a new technology which employs discharge plasma formed in ordinary atmospheric pressure has been intensively investigated in many industrialized nations. Although a plenty of useful outcomes and suggestions have been made public by scientists in this field, few commercial products which effectively decompose pollutant gases have appeared as yet. This is partly because that the energy efficiency of a most effective plasma reactor has not reached a satisfactory level in comparison with those of devices using conventional technologies. In an attempt to solve the problem mentioned above, we noticed to combine heterogeneous electrical discharges. This concepts is based on that each plasma reactor has its specific spatial region in which chemical reaction are active and by electrically affected with another reactor of different type, the activated region would increase - which may lead to cutting down the energy consumption. To prove this concept experimentally, two different discharge equipments, a plane ceramic-based surface discharge electrode and a corona electrode with tungsten needle may, are selected and combined to fabricate a hybrid plasma reactor. The results are summarized as follows; (1) Ozone concentration generated in the plasma region drastically increases when the positive corona discharge is added to the surface discharge. The rate of increase of ozone depends on the frequency of the surface discharge. The negative corona, however, does not contribute to the improvement of the ozone generation. (2) NO(nitrogen monoxide) decomposition rate also improves by simultaneously applying the surface and the positive corona discharges. The effect of the corona superposition is more evident when the level of the surface discharge is moderate. (3) By adjusting the corona level, the net energy efficiency during NO decomposition improves in comparison with the simple surface discharge reactor.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.78-79
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• 2007

In this study, chemical dry characteristics of silicon nitride layers were investigated in the $F_2/N_2/Ar$ remote plasma. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive $N_2$ gas on the etch rates of various silicon nitride layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the $F_2$ flow rate, the addition $N_2$ flow rate and the substrate temperature. The etch rates of the various silicon nitride layers at the room temperature were initially increased and then decreased with the $N_2$ flow increased, which indicates an existence of the maximum etch rates. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments the $F_2$ gas flow, addition $N_2$ flow rate and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon nitride layers

• 한국물환경학회지
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• 제30권4호
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• pp.394-402
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• 2014

High-voltage dielectric discharges are an emerging technique in environmental pollutant degradation, which are characterized by the production of hydroxyl radicals as the primary degradation species. The initiation and propagation of the electrical discharges depends on several physical, chemical, and electrical parameters such as 1st and 2nd voltage of power, gas supply, conductivity and pH. These parameters also influence the physical and chemical characteristics of the discharges, including the production of reactive species such as OH, $H_2O_2$ and $O_3$. The experimental results showed that the optimum 1st voltage and oxygen flow rate for RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation were 160 V (2nd voltage of is 15 kV) and 4 L/min, respectively. As the 2nd voltage (4 kV to 15 kV) was increase, RNO degradation was increased and, generated $H_2O_2$ and $O_3$ concentration were increased. The conductivity of the solution was not influencing the RNO degradation, $H_2O_2$ and $O_3$ generation. The pH effect on RNO degradation was not high. However, the lower pH and the conductivity, the higher $H_2O_2$ and $O_3$ generation were observed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1077-1080
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• 2002

Present status of diagnostics and simulations on microplasmas for understandings of the discharge and VUV emission characteristics in a unit cell of plasma display panel is overviewed and their future perspective will be argued towards potential improvement of the characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• 한국전자파학회논문지
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• 제20권3호
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• pp.303-312
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• 2009

본 연구에서는 초고주파를 사용하여 플라즈마 가시광을 발생시키기 위한 전계 집속형 도파관 시스템을 제안하였다. 이 시스템은 초고주파 전력 공급기인 마그네트론, 전력 전송을 위한 도파관부 및 메쉬형 공동으로 이루어진 반응기로 구성된다. 소량의 황 분말과 버퍼 가스인 Ar이 봉입된 석영 벌브를 반응기 내에 위치시키고, 강한 전계를 집속시킴으로써 황 플라즈마가 생성 및 여기되도록 하였다. 즉, 도파관과 반응기의 내벽에 각각 도체팁을 장착시키고, 그 사이에 플라즈마 벌브를 위치시킴으로써 벌브에 강한 전계가 집중되도록 하였다. 또한 플라즈마 생성 과도기에서, 플라즈마의 전기적 도전성 변화에 따른 정합 특성의 열화를 최소화할 수 있는 도파관부를 설계하여 안정적으로 동작되도록 하였다. 최종적으로 2.45 GHz 알루미늄 도파관 시스템을 제작하고, 400W급 마그네트론을 사용한 가시광 방출 실험을 통해 설계된 시스템의 타당성을 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.435-435
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• 2010

A inclined slot-excited plasma source is newly designed and constructed for higher flux HNB(Hyperthermal Neutral Beam) generation. The present source is different from the vertical SLAN(SLot ANtenna) sources [1] in two aspects. One is that the slots are inclined, and the other is that the magnetic field is configured to a cusp type. These modifications are intended to make the source plasma operated in sub-milli-torr pressure regime and as thin as possible, both of which is to get higher HNB flux by decreasing the re-ionization rate of the reflected atoms from the neutralizer [2]. The plasma is generated in a quartz tube of internal diameter 170 mm enclosed in a aluminum application chamber of larger diameter 250 mm. The microwave power is fed to the plasma chamber by 8 inclined slots cut into the application chamber wall. The slots are coupled the chamber to a WR280 waveguide wound around it to form a ring resonator. In order to make two slots $\lambda_g/2$ apart in phase, the adjacent slots are rotated in opposite directions. The rotation angle of the slots are set to $60^{\circ}$ from the chamber axis. Between the quartz chamber and the aluminum cylindrical chamber 8 NdFeB magnets are equally spaced and fixed to form the cusp magnetic field confinement and ECR (Electron Cyclotron Resonance) field. In this presentation, the magnetic and electromagnetic simulations, and the measured plasma parameters are given for both the inclined and the vertical slot-excited plasma sources. We also discuss how the sources can be tailored to suit better-performing HNB sources.