• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.57-60
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• 2008

Purpose: The radial speed of plasma current sheath was measured at the plasma focus apparatus. Methods: The measurement was used to time-resolved spectroscopic method and Rogowski coils. Results: Radial current sheath speed was measured with $10^5$ cm/s at Helium and Argon pressure between 5 to 100 torr and discharging voltage of 15 kV. When the gas pressure was increased, the current sheath speeds were decreased. Conclusions: At the optimum condition of plasma focus apparatus, the radial speed is guessed $10^7$ cm/s as a results of the measurement of current sheath speed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.220-220
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• 2011

The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.407-412
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• 2016

We analyzed through numerical simulations the properties of a square beam homogenizer near the target for laser shock peening. The efficiency was calculated near the target by considering the plasma threshold of the metals. We defined the depth of focus of the square beam homogenizer with a given efficiency near the target. Then, we found the relationship between the depth of focus for the laser shock peening and four main parameters of the square beam homogenizer: the plasma threshold of the metal, the number of lenslets in the array-lens, the focal length of the condenser lens and the input beam size.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.118-118
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• 2006

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.3
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• pp.38-45
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• 2016

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.6-10
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• 2016

In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

• Nuclear Engineering and Technology
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• v.52 no.4
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• pp.827-834
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• 2020

Damage of tungsten due to helium ions of a PF device was studied. The tungsten was analyzed by SEM and AFM after irradiation. SEM revealed fine bubbles of helium atoms with diameters of a few nanometers, which join and form larger bubbles and blisters on the surface of tungsten. This observation confirmed the results of molecular dynamics simulation. SEM analysis after etching of the irradiated surface indicated cavities with depth range of 35-85 nm. The average fluence of helium ion of the PF device was calculated about 5.2 × 10¹⁵ cm^-2 per shot, using Lee code. Energy spectrum of helium ions was estimated using a Thomson parabola spectrometer as a function of dN/dE ∝ E^-2.8 in the energy range of 10-200 keV. The characteristics of helium ion beam was imported to SRIM code. SRIM revealed that the maximum DPA and maximum helium concentration occur in the depth range of 20-50 nm. SRIM also showed that at depth of 30 nm, all of the tungsten atoms are displaced after 20 shots, while at depth of higher than 85 nm the destruction is insignificant. There is a close match between SRIM results and the measured depths of cavities in SEM images of tungsten after etching.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.1-6
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• 2022

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.27-31
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• 1998

We investigated visible light radiated from Plasma focus device by time-resolved analyzed method and time-integrated analyzed method. Plasma focus consisted of two coaxial electrodes is a device that translated from electric energy of maximum 40 kV/20 kJ in capacitor banks into visible light by electric discharge. Spectral analysis is using Monochromator(f =0.5m). Time-resolved spectrum is analyzed with a oscilloscope the light pulse of constant wavelength and time-integrated spectrum does with densitometer the film which developed a constant range of wavelength. The optimum condition of visible emission was that the discharging voltage was 17kV and the gas pressure 0.5 torr Ar.