• 제목/요약/키워드: Plasma flow control

검색결과 188건 처리시간 0.028초

아크 플라즈마를 이용한 과불화합물 처리공정에서 반응가스에 의한 효과 (Effect of Reaction Gases on PFCs Treatment Using Arc Plasma Process)

  • 박현우;최수석;박동화
    • 청정기술
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    • 제19권2호
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    • pp.113-120
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    • 2013
  • 화학적으로 안정한 과불화합물을 처리하기 위해서는 많은 양의 에너지를 필요로 한다. 이러한 단점을 극복하기 위해서 저전력 아크 플라즈마 시스템을 개발하였다. 분해대상은 $CF_4$, $SF_6$, $NF_3$가 플라즈마 토치로 직접 주입되었으며, 아크 플라즈마 토치의 열효율을 측정하여 실출력을 계산하였다. 실출력과 폐기체 유량 변화 그리고 추가적인 반응가스에 의한 분해효율을 확인하였다. 또한 열역학적 평형조성 분석을 수행하여 실험 결과와 비교하였다. 토치의 열효율은 60~66%의 결과를 보였으며 폐가스 유량이 증가함에 따라 분해효율이 감소하였고 입력전력이 늘어남에 따라 분해효율이 상승되었다. 추가적인 반응 가스가 없이 $CF_4$, $SF_6$, $NF_3$의 분해효율은 입력전력이 3 kW, 폐가스 유량이 70 L/min인 조건에서 각각 4, 15, 90%를 보였다. 반응가스로 산소와 수소를 이용하여 분해효율을 급격하게 증가시킬 수 있었으며, 실험 결과 산소보다 수소를 사용하였을 경우가 분해효율 상승효과와 부산물 제어에 효과적인 것을 알 수 있었다. 수소의 경우, 발생되는 부산물은 불화수소산이었으며 이는 일반적인 습식 스크러버를 이용하여 처리가 용이한 물질이다. 수소를 이용한 화학반응에서 입력전력이 3 kW, 폐가스유량이 100 L/min인 조건에서 $CF_4$가 25%, $SF_6$가 39%, $NF_3$가 99%의 분해효율을 각각 나타냈다.

HBr/Ar/CHF3 혼합가스를 이용한 ZnO 박막의 유도결합 플라즈마 식각 (Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF3 Gas Mixtures)

  • 김문근;함용현;권광호;이현우
    • 한국전기전자재료학회논문지
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    • 제23권12호
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    • pp.915-918
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    • 2010
  • In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

전기 삼투를 이용한 미세 유체 소자에서의 유량 제어 기술 개발 (Development of electroosmotic flow control technique in micro fluidic devices)

  • 최은수;정대중;심원철;양상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 C
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    • pp.1991-1993
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    • 2002
  • This paper presents the PDMS surface characteristic change after the plasma process and the electroosmotic flow control technique for the two-dimensional focusing in the micro channels made of PDMS and glass. The channels are fabricated by plastic molding and micromachining technique. To observe the surface characteristic change as time elapses, we measure the contact angle of water on the surface and the velocity of the electroosmotic flow in a channel. The electric field adequate for focusing of a core flow in a confluence channel is obtained by the experiment. The computer simulation is performed to obtain the width and the depth of the core flow for several junction angles of the confluence channel.

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제어체적법에 의한 Ar 아크 플라즈마의 특성 계산 (Numerical calculations of characteristics of Argon arc plasma using the control volume method)

  • 김외동;고광철;강형부
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1404-1406
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    • 1995
  • In this paper, argon gas was used for numerical analysis of an arc in a cutting plasma torch driven by constant current. We established nozzle-constricting type torch domain and calculated steady state characteristics of argon arc plasma using the control volume method(CVM). For simplicity, we assumed that the flow field is laminar and the local thermodynamic equilibrium(LTE) prevails in all domain regions. We also neglected cathode-fall and anode-fall effects. Considering magnetic pinch effect and viscosity effect, we solved the momentum equation. Voltage drop in the arc column due to input current was calculated from the temperature field obtained by the energy balance equation.

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PEM을 이용한 ITO/PET film의 조성 제어 (The composition control of ITO/PET by plasma emission monitor)

  • 한세진;김용환;김영환;이택동
    • 한국진공학회지
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    • 제8권4A호
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    • pp.438-444
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    • 1999
  • The characterization of the reactively sputtered ITO layer on the PET film has been studied. The PEM device has been used to determine the optimum stoichimetry through control of the amount of oxygen incorporated into the alloy target and the optimum operation conditions to produce films with the highest electrical conductivity and visible transparency. The PEP film was pre-treated under the plasma discharge condition to remove the adsorbed gases and to modify the surface morphology. The results revealed that by adjusting the flow rate of oxygen with the spectral intensity of indium target, the composition of plasma gas can be kept constant during the entire deposition period. The resistivity of ITO film obtained was fond to be about 37$\Omega\Box$, and the transmittance of visual range was about 86%.

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유전체 방전을 이용한 확산화염에서의 매연저감 특성 (Soot Reduction in Diffusion Flames Using Dielectric Barrier Discharge)

  • 차민석;김관태;정석호;이상민
    • 한국연소학회:학술대회논문집
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    • 대한연소학회 2003년도 제27회 KOSCO SYMPOSIUM 논문집
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    • pp.27-32
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    • 2003
  • The effect of non-thermal plasma on diffusion flames in co-flow jets has been studied experimentally by adopting a dielectric barrier discharge technique. The generation of streamers was enhanced with a flame due to increased reduced electric fields by high temperature burnt gas and the abundance of ions in the flame region. The effect of streamers on flame behavior reveals that the flame length was significantly decreased as the applied voltage increased and the yellow luminosity by the radiation of soot particles was also significantly reduced. The formation of PAH and soot was influenced appreciably by the non-thermal plasma, while the flame temperature and the concentration of major species were not influence much with the plasma generation. The results demonstrated that the application of non-thermal plasma can be a viable technique in controlling soot generation in flames with low power consumption in the order of 1 W.

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Melatonin and selenium supplementation in extenders improves the post-thaw quality parameters of rat sperm

  • Shahandeh, Erfan;Ghorbani, Mahboubeh;Mokhlesabadifarahani, Tahereh;Bardestani, Fateme
    • Clinical and Experimental Reproductive Medicine
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    • 제49권2호
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    • pp.87-92
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    • 2022
  • Objective: The aim of this study was to determine the effects of melatonin and selenium in freezing extenders on frozen-thawed rat sperm. Methods: Semen samples were collected from 20 adult male Wistar albino rats. Following dilution, the samples were divided into six groups: four cryopreserved groups with 1 mM and 0.5 mM melatonin and selenium supplements, and two fresh and cryopreserved control groups. The rapid freezing technique was used to freeze the samples. Flow cytometry was used to assess plasma membrane integrity, mitochondrial membrane potential, and DNA damage, while computer-assisted sperm analysis was used to assess motility. Results: Total motility was higher in the 1 mM melatonin supplementation group than in the cryopreserved control group (mean±standard error of the mean, 69.89±3.05 vs. 59.21±1.31; p≤0.05). The group with 1 mM selenium had the highest plasma membrane integrity (42.35%±1.01%). The cryopreserved group with 0.5 mM selenium had the highest mitochondrial membrane potential, whereas the cryopreserved control group had the lowest (45.92%±4.53% and 39.45%±3.52%, respectively). Conclusion: Cryopreservation of rat semen supplemented with 1 mM melatonin increased sperm motility after freeze-thawing, while supplementation with 0.5 mM selenium increased mitochondrial activity.

Analysis of H-ICP Source by Noninvasive Plasma Diagnostics of Etching Process

  • Park, Kun-Joo;Kim, Min-Shik;Lee, Kwang-Min;Chae, Hee-Yeop;Lee, Hi-Deok
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.126-126
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    • 2009
  • Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

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Effective Control of CH4/H2 Plasma Condition to Synthesize Graphene Nano-walls with Controlled Morphology and Structural Quality

  • Park, Hyun Jae;Shin, Jin-ha;Lee, Kang-il;Choi, Yong Sup;Song, Young Il;Suh, Su Jeong;Jung, Yong Ho
    • Applied Science and Convergence Technology
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    • 제26권6호
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    • pp.179-183
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    • 2017
  • The direct growth method is simplified manufacturing process used to avoid damages and contaminants from the graphene transfer process. In this paper, graphene nano-walls (GNWs) were direct synthesized using electron cyclotron resonance (ECR) plasma by varying the $CH_4/H_2$ gas flow rate on the copper foil at low temperature (without substrate heater). Investigations were carried out of the changes in the morphology and characteristic of GNWs due to the relative intensity of hydrocarbon radical and molecule in the ECR plasma. The results of these investigations were then discussed.

플라즈마 식각공정에서의 EPD(End Point Detection) 제어기에 관한 연구 (A study on EPD(End Point Detection) controller on plasma teaching process)

  • 최순혁;차상엽;이종민;우광방
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1996년도 한국자동제어학술회의논문집(국내학술편); 포항공과대학교, 포항; 24-26 Oct. 1996
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    • pp.415-418
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    • 1996
  • Etching Process, one of the most important process in semiconductor fabrication, has input control part of which components are pressure, gas flow, RF power and etc., and plasma gas which is complex and not exactly understood is used to etch wafer in etching chamber. So this process has not real-time feedback controller based on input-output relation, then it uses EPD(End Point Detection) signal to determine when to start or when to stop etching. Various type EPD controller control etching process using EPD signal obtained from optical intensity of etching chamber. In development EPD controller we concentrate on compensation of this signal intensity and setting the relative signal magnitude at first of etching. We compensate signal intensity using neural network learning method and set the relative signal magnitude using fuzzy inference method. Potential of this method which improves EPD system capability is proved by experiences.

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