• Korean Chemical Engineering Research
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• 제44권5호
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• pp.483-488
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• 2006

유기고분자에 대한 건식 식각공정으로 remote 플라즈마를 이용하여 유리 표면에 도포된 PMMA의 식각공정에 관한 연구로 플라즈마 출력, 반응가스, 플라즈마 발생원과의 거리에 대한 식각특성을 측정하였다. 플라즈마 발생원으로부터 멀어질수록 플라즈마에 의해 발생된 라디칼 밀도로 인해 PMMA 식각속도가 감소하였다. 플라즈마 내에서 발생된 라디칼에 의해 PMMA가 제거되며, 플라즈마 출력이 증가할수록 PMMA 표면과 반응하는 라디칼 증가로 식각속도는 선형적으로 증가하였다. 식각 기체에서 산소의 양이 증가함에 따라 식각속도 증가와 더불어 식각표면의 거칠기도 증가함을 알 수 있었다.

• 한국세라믹학회지
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• 제53권6호
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1305-1308
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• 2003

A new technique is presented to construct a predictive model of plasma etch process. This was accomplished by combining a backpropagation neural network (BPNN) and a genetic algorithm (GA). The predictive model constructed in this way is referred to as a GA-BPNN. The GA played a role of controlling training factors simultaneously. The training factors to be optimized are the hidden neuron, training tolerance, initial weight magnitude, and two gradients of bipolar sigmoid and linear functions. Each etch response was optimized separately. The proposed scheme was evaluated with a set of experimental plasma etch data. The etch process was characterized by a $2^3$ full factorial experiment. The etch responses modeled are aluminum (A1) etch rate, silica profile angle, A1 selectivity, and dc bias. Additional test data were prepared to evaluate model appropriateness. The GA-BPNN was compared to a conventional BPNN. Compared to the BPNN, the GA-BPNN demonstrated an improvement of more than 20% for all etch responses. The improvement was significant in the case of A1 etch rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.1-5
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• 2005

A new model of plasma etch process was constructed by using a radial basis function network (RBFN). This technique was applied to an etching of silicon carbide films in a NF$_3$ inductively coupled plasma. Experimental data to train RBFN were systematically collected by means of a 2$^4$ full factorial experiment. Appropriateness of prediction models was tested with test data consisted of 16 experiments not pertaining to the training data. Prediction performance was optimized with variations in three training factors, the number of pattern units, width of radial basis function, and initial weight distribution between the pattern and output layers. The etch responses to model were an etch rate and a surface roughness measured by atomic force microscopy. Optimized models had the root mean-squared errors of 26.1 nm/min and 0.103 nm for the etch rate and surface roughness, respectively. Compared to statistical regression models, RBFN models demonstrated an improvement of more than 20 % and 50 % for the etch rate and surface roughness, respectively. It is therefore expected that RBFN can be effectively used to construct prediction models of plasma processes.

• 전자공학회논문지A
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• 제30A권7호
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• pp.60-74
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• 1993

Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

• Industrial Engineering and Management Systems
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• 제14권4호
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• pp.392-400
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• 2015

Monitoring of plasma etch processes for fault detection is one of the hallmark procedures in semiconductor manufacturing. Optical emission spectroscopy (OES) has been considered as a gold standard for modeling plasma etching processes for on-line diagnosis and monitoring. However, statistical quantitative methods for processing the OES data are still lacking. There is an urgent need for a statistical quantitative method to deal with high-dimensional OES data for improving the quality of etched wafers. Therefore, we propose a robust relevance vector machine (RRVM) for regression with statistical quantitative features for modeling etch rate and uniformity in plasma etch processes by using OES data. For effectively dealing with the OES data complexity, we identify seven statistical features for extraction from raw OES data by reducing the data dimensionality. The experimental results demonstrate that the proposed approach is more suitable for high-accuracy monitoring of plasma etch responses obtained from OES.

• Korean Chemical Engineering Research
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• 제51권6호
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• pp.755-759
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• 2013

Bosch 공정의 식각 단계에서 Ar을 첨가하였을 때 Si의 식각특성을 관찰하기 위하여 식각 단계에서 $SF_6$ 플라즈마만 사용한 경우와 Ar 유속비율이 20%인 $SF_6$/Ar 플라즈마를 각각 사용하여 Si을 Bosch 공정으로 식각하였다. Bosch 공정의 식각 단계에서 $SF_6$ 플라즈마에 Ar 가스를 첨가하면 $Ar^+$ 이온에 의한 이온포격이 증가하였고 이는 Si 입자의 스퍼터링을 초래할 뿐 아니라 F 라디칼과 Si의 화학반응을 가속하였다. 그 결과 식각 단계에서 20%의 Ar이 첨가되어 Bosch 공정으로 수행된 Si의 식각속도는 Ar이 첨가되지 않은 경우보다 10% 이상 빨라졌고 식각프로파일도 더욱 비등방적이었다. 이 연구의 결과는 Bosch 공정으로 Si을 식각할 때 식각속도와 식각프로파일의 비등방성을 개선하는데 필요한 기초자료로 사용될 수 있을 것으로 판단된다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.298-301
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• 2000

We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30％ O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.