• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.4
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• pp.204-208
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• 2006

In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as $BCl_3/Ar$ gas mixing ratio, RF power, and process pressure. As the $BCl_3/Ar$ gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between $BCl_3$ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.98-99
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• 2012

Deposition of thin films using magnetron sputtering plasmas is a well-developed, classical technology. However, detailed investigations using advanced diagnostics are insufficient in magnetron sputtering, in comparison with plasma-aided dry etching and plasma-enhanced chemical vapor deposition. In this talk, we will show examples of diagnostic works on magnetron sputtering employing metal targets. Diagnostic methods which have fine spatial resolutions are suitable for magnetron sputtering plasmas since they have significant spatial distributions. We are using two-dimensional laser-induced fluorescence spectroscopy, in which the plasma space is illuminated by a tunable laser beam with a planer shape. A charge-coupled device camera with a gated image intensifier is used for taking the picture of the image of laser-induced fluorescence formed on the planer laser beam. The picture of laser-induced fluorescence directly represents the two-dimensional distribution of the atom density probed by the tunable laser beam, when an intense laser with a relatively wide line-width is used. When a weak laser beam with a relatively narrow linewidth is used, the laser-induced fluorescence represents the density distribution of atoms which feel the laser wavelength to be resonant via the Doppler shift corresponding to their velocities. In this case, we can obtain the velocity distribution function of atoms by scanning the wavelength of the laser beam around the line center.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.4 no.2
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• pp.41-45
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• 1990

The previous plasma diagnostics on HPS (high pressure sodium) lamp have analyzed only the average temperature and pressure. But the time change of the plasma state of HPS lamp is great by the small heat inertia. By these properties, the necessity of the diagnostics of time change of plasma state is important. This thesis proposes a new time-varying spectroscopy technics that can get the time-varying plasma state by measuring and analyze Na D line spectrum.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.142-142
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• 2011

Microwave diagnostics method for plasma science and engineering is vigorous research area for its good characteristics such as high sensitivity, reliability, and broad measurement spectrum from low density plasma to high density. We investigate mechanism of microwave probes (hairpin, impedance and absorbtionf probe) and apply it for interpretation of full transmitted spectrum of cutoff probe. Mechanism of the spectrum having same key roles of I-V curve of Langmuir probe is not exactly revealed yet in spite of its importance. This study elucidates physics behind it using a circuit model and E/M wave simulation. Circuit model reveals exact cut-off peak frequency taking account of a collision frequency and a plasma frequency and it enable precise diagnostics of plasma densty from low pressure to high pressre. Cut-off like peaks have been obstacle for choosing cut-off peak is analyzed by E/M simulation and one of cutoff like peaks made by probe holder used for acquire plasma density with cutoff peak applying the hairpin relation. Furthermore, phase difference method for plasma density is conducted. This method uses a single microwave frequency source and it is low-priced.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1077-1080
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• 2002

Present status of diagnostics and simulations on microplasmas for understandings of the discharge and VUV emission characteristics in a unit cell of plasma display panel is overviewed and their future perspective will be argued towards potential improvement of the characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.295-295
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.89-94
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• 2011

The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.

• Proceedings of the Korean Nuclear Society Conference
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• 1978.06a
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• pp.117.2-117
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• 1978

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.10-10
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• 2007