• 전기의세계
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• 제22권5호
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• pp.19-32
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• 1973

This paper treats with some of plasma jet behaviors under magnetic field for the purpose of controlling important characteristics of plasma jet in the practices of material manufacturings. Under the existence and non-existence of magnetic field, the pressure distribution, flame length, stability and noise of plasma jet are comparatively evaluated in respect of such parameters as are current, gap of electrode, quantity of argon flow, magnetic flux density, diameter and length of nozzle. The results are as follows: 1) the pressure, the length and the noise of plasma jet rise gradually with the increase of are current, and have high values under identical arc current as the diameter of nozzle increases, but reverse phenomenon tends to appear in the noise. 2) The pressure, the flame length and the noise increase with the increased quantity of argon flow, and the rising slope of noise is particularly steep. Under magnetic field, the quantity of argon flow in respect of flame length has the critical value of 80(cfh). 3) The pressure and length of flame decrease with small gradient value as the length of gap increases, but the noise tends to grow according to the increase of nozzle diameter. 4) The pressure and the length of jet flame decrease inversly with the increase of magnetic flux density, which have one critical value in the 100 amps of arc current and two values in 50 amps. The pressure of jet flame can be below atomospher pressure in strong magnetic field. 5) "The constriction length of nozzle has respectively the critical value of 6(mm) for pressure and 23(mm) for the length of flame. 6) Fluctuations in the wave form of voltage become greater with the increase of argon flow and magnetic flux density, but tends to decrease as arc current increases, having the frequency range of 3-8KHz. The wave form of noise changes almost in parallel with that of voltage and its changing value increases with argon flow, arc current and magnetic flux density, having the freuqency range of 6-8KHz. The fluctuation of jet presurre is reduced with the increase of argon flow and magnetic flux density and grows with arc current.rent.

• 대한지역사회영양학회지
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• 제10권1호
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• pp.91-100
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• 2005

This study was conducted to investigate the effects of smoking on nutrition intake, bone mineral density and blood mineral status. The subjects were composed of two groups: 100 smokers and 100 non-smokers was used along with a questionnaire. Anthropometric measurements, dietary intakes using 24-hours recall method were compared. At twenty subjects from each group were selected, bone mineral density were measured by quantitative ultrasound and plasma mineral levels were analyzed by ICP spectrometer. The average ages of smokers and non-smokers were 23.9 and 22.8 years old, respectively. The height, weight and BMI of the smokers were no significant difference. The average numbers of smoked cigarettes were 11.8/d and the average packyear was 3.1 in the smokers. About $97\%$ of the smokers drank alcoholic beverages, while $85\%$ of the non-smokers did. The smokers tended to eat less meals and dinner meal, but drink coffee more often compared to the non-smokers. The mean daily energy intake and CPF energy intake ratio were 2184. 9 kcal and 57.2 : 13.7 : 26.4 in the smokers and 2262.6 kcal and 55.8 : 13.1 : 28.6 in the non-smokers. The smokers consumed significantly lower intake of $\beta$-carotene. There were no significant differences in bone mineral density of BUA, SOS and QUI. There were no significant differences in plasma levels of Ca, Mg, Fe and Zn. However, plasma Cu level of the smokers was significantly higher than that of the non-smokers. In conclusion, the smokers of this study showed a more undesirable dietary intake in the light of their low ,B -carotene and high alcoholic beverages, and coffee. The plasma Cu level of the smokers was higher than that of the non-smokers, showing that Cu is involved in smoking. Therefore, it could be suggested that more systematic research be conducted with respect to Cu and smoking and that increased nutrition education and guidelines for smokers are required.

• 한국진공학회지
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• 제21권3호
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• pp.121-129
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• 2012

진공을 기초로 한 극판 전력이 인가된 유도 결합 플라즈마 소스에 관한 대부분의 연구는 자기 바이어스 효과에만 한정되어 있으며, 다양한 반도체 및 디스플레이 식각 공정에서 공정 결과와 소자 품질에 결정적인 역할을 하는 플라즈마 변수들(전자 온도, 플라즈마 밀도)과 극판 전력의 상관관계에 대한 연구는 거의 없는 실정이다. 본 연구에서는 극판 전력이 플라즈마 변수에 미치는 영향에 관한 내용을 다루고 있으며, 최근의 연구 결과에 대한 리뷰를 포함하고 있다. 플라즈마 밀도는 극판 전력 인가에 의하여 감소 또는 증가하였으며, Fluid global model에 의한 결과와 잘 일치하는 경향을 보였다. 전자 온도는 RF 바이어스에 의하여 증가하였으며, 전자 에너지 분포 측정을 통하여 전자 가열 메커니즘을 관찰하였다. 또한, 플라즈마 밀도의 공간 분포는 극판 전력에 의하여 더욱 균일해짐을 알 수 있었다. 이러한 극판 전력과 플라즈마 변수들의 상관관계와 전자 가열 메커니즘에 대한 연구는 방전 특성의 물리적 이해뿐만 아니라, 반도체 식각 공정에서 소자 품질 및 공정 개선을 위한 최적의 방전조건 도출과 외부 변수 제어에 큰 도움을 주리라 예상된다.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• Journal of Electrical Engineering and Technology
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• 제11권2호
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권11호
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• pp.508-511
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of 5 ∼ 50 (W) at 13.56 (MHz). The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100 (V) ∼+100 (V). When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30 〔W〕. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF rower for efficient light illumination in an electrodeless fluorescent lamp.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.201-204
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• 2002

A large area inductively coupled plasma which is applicable to LCD processing is built with a modified single loop RF antenna. Combination of parallel and series paths of RF current through the antenna induces local enhancement of plasma density, which in turn provides uniform plasma density near the substrate. The plasma density distribution is measured and compared with that of the conventional single loop antenna. Aisotropic etching of photoresist is performed, and it is found that etch uniformity is improved by 3％ from 15% of the conventional etcher over 350$\times$300mm glass substrates. Photoresist etching rate and uniformity can be further improved by applying a periodic weak axial magnetic fieid.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.497-497
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• 2012

산업의 발전함에 따라 고기능성 박막의 수요가 증가하고 있으며, magnetron sputtering, e-beam evaporation, ion beam 등을 이용한 박막 증착에 대한 연구가 많이 진행되고 있다. 그러나 기존 방법만으로는 박막 접착계면의 불균일로 인해 고기능성 박막 성장이 어렵다는 단점을 가지고 있다. 이러한 문제를 해결하기 위하여 박막 공정 중 고밀도 플라즈마 소스(high density plasma source)를 통해 추가적인 에너지를 인가하여 박막의 밀도를 bulk 수준으로 증가시키고 내부 응력을 조절하는 연구에 대한 관심이 커지고 있다. 특히 grid를 이용하여 플라즈마 내 이온의 입사에너지를 증가시킴으로써, 기존 공정보다 고기능성 박막을 구현할 수 있다. 본 연구에서는 RF power를 이용한 inductively coupled plasma를 통해 플라즈마를 생성시킨 후 grid에 DC power를 인가하는 플라즈마 소스를 개발하였으며, 시뮬레이션을 통해 plasma density와 ion current density, ion energy 분석 및 grid 디자인을 하였다. 개발된 플라즈마 소스는 ion energy analyzer를 통해 RF power 및 grid에 인가하는 power의 세기에 따라 이온화 정도 및 이온의 입사에너지를 측정하였다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.11-18
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• 2003

In this study we attempted to diagnose the states and properties of plasma generated while depositing SiON thin films using PECVD (Plasma enhanced chemical vapor deposition). The temperature and density of electron gases formed in a PECVD chamber were measured by Langmuir probe method. Their values were also estimated under some assumptions we made in this work. Comparison between experimental and theoretical values of the temperature and density of electron gases was made. The experimental and estimated results revealed that, as RF Power gets higher, the electron density linearly increases, but that the electron temperature does not vary.