• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.229-233
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• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.1
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• pp.81-92
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• 1996

The Ar/Ar-$H_2$ plasma method was applied to reduce oxides and refine metals of V, Ta and B. In addition, the high temperature chemical reaction in Ar plasma and of the refining reaction in the Ar-(20%)$H_2$ plasma were analyzed. The crude V of 96wt% purity was obtained at the ratio of $C/V_{2}O_{5}=4.50$ by the Ar plasma reduction grade and the maximum reduction was obtained at $C/V_{2}O_{5}=4.50$ due to the $O_{2}$ loss from the thermal decomposition of vanadium oxide. In the Ar-(20%)$H_2$ plasma refining, the metallic V of 99.2wt% was produced at the ratio of $C/V_{2}O_{5}=4.40$. It was considered that a main refining reaction resulted from the chemical reaction between the residual carbon and residual oxygen. The metallic Ta of 99.8wt% was obtained at the ratio of $C/Ta_{2}O_{5}=5.10$ in a Ar plasma reduction and the Oz loss from the thermal decomposition of tantalum pentoxide did not take place. The deoxidation reaction was more significant than the decarburization reaction in the Ar-(20%)$H_2$ plasma refining and the metallic Ta of 99.9wt% was produced within the range of $C/Ta_{2}O_{5}$ ratio of 4.50 to 5.10. The Vickers hardness of Ta in the above mentioned range was about 220Hv due to the decrease in a residual oxygen by the deoxidation reaction. On the other hand, C is no suitable agent for the reduction of $B_{2}O_{3}$ by the Ar and Ar-$H_2$ plasma. But Fe-B-Si alloy was produced with the reduction of $B_{2}O_{3}$ in the melt when Fe, C, $B_{2}O_{3}$, and ferroboron mixtures were melted by the high frequency induction melting.

• Textile Coloration and Finishing
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• v.1 no.1
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• pp.7-18
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• 1989

The distinguishing characteristic of the glow discharge is that chemical reaction induced by partially ionized gases are limited only to the substrate surface. Most studies have been done on the plasma etching and polymerization. The graft polymerization in vapour phase by cold plasma has been rarely investigated. In this study the system of tub3ar reaction chamber with capacitively coupled electrode of alternative current of 60 Hz was employed for the graft polymerization. The graft polymerization of Acylic Acid(AA) onto the poly (ethylene terephthalate) (PET) was carried out by treatment of PET film and fabric by cold plasma (glow discharge of argon gas), followed by the supply of AA vapour. The graft yield was about 1 wt%. The surface property was determined by contact angle, the surface tension was evaluated by zisman’s plot and equation of surface tension mesurement. The results were as follows: 1. In order to obtain lower contact angle, it was effective to avoid the vicinity of electrodes for a setting position of substrate. 2. Contact angle affected on the monomer pressure and its duration of exposure to the acid vapour. 3. Polymer radical formation was influenced by the changes of the value of current density and plasma treatment time. 4. Total surface tension of plasma grafted PET film increased. With an increase in the carboxylic acid content, the dispersion force decreased, while, the polar force and hydrogen bonding force increased. 5. The contact angle decreased from $75^\circ$ to around $30^\circ$ by plasma grafting. There was no ageing effect on the contact angle after 4 months.

• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.711-717
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• 2011

Two dimensional simulation results of a capacitively coupled oxygen plasma in a cylindrical reactor geometry are presented. Detailed electron impact reaction rates, which strongly depend on electron energy, are computed from collision cross sections of electrons with $O_2$ and O. Through the coupling of a three moment plasma model with a neutral chemistry/transport model are predicted spatiotemporal distributions of both charged species (electron, $O_2{^+}$, $O^+$, $O_2{^-}$, and $O^-$) and neutral species including ground states ($O_2$ and O) and metastables, known to play important roles in oxygen plasma, such as $O_2(a^1{\Delta}_g)$, $O_2(b^1{{\Sigma}_g}^+)$, $O(^1D)$, and $O(^1S)$. The simulation results clearly verify the existence of a double layer near sheath boundaries in the electronegative plasma.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.12
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• pp.567-572
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• 2002

In these days, diesel vehicle or power plant emits $NO_X\; and SO_2$ which cause air pollution like acid-rain, ozone layer destroy and optical smoke, therefore there are many kinds of methods considered for removing them such as SCR, catalyst, plasma process, and plasma-catalyst hybrid process. T$TiO_2$ is commonly used as catalyst to remove $NO_X$ gas because it have very excellent chemical characteristic as photo catalyst. In this paper, $NO_X$ sensing characteristic of $TiO_2$ thin film deposited by R.F Magnetron sputtering is investigated. A finger shaped electrode on $Al_2$O$_3$ substrate is designed and $TiO_2$ is deposited on the electrode by the magnetron sputtering deposition system. Chemical composition of the deposited $TiO_2$ thin film is $TiO_{1.9}$ by RBS analysis. When the UV is irradiated on it with flowing air, capacitance of $TiO_2$ thin film increases, however, when NO gas is put into the system with air, it immediately decreases because of photo chemical reaction. and it monotonously decreases with increasing NO concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Journal of the Korean Society of Combustion
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• v.5 no.2
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• pp.37-50
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• 2000

In the present study, a systematic chemical kinetic calculations were made to investigate the augmentation of $NO-NO_2$ conversion due to the addition of various hydrocarbons (methane, ethylene, ethane, propylene, propane) in the nonthermal plasma treatment. It is included in the present conclusion that the reaction between hydrocarbon and oxygen radicals induced by electron collision, is believed to be a primarily process for triggering the overall NO oxidation and the eventual NOx reduction. Upon the completion of the initiating step, various radicals (OH, $HO_2$ etc.) successively are produced by hydrocarbon decomposition form the primary path of $NO-NO_2$ conversion. When the initiating step is not activated, hydrocarbon consumption rate appeared to be very low, thereby the targeted level of NO conversion can only be achieved by the addition of more input energy. Present study showed ethylene and propylene to have higher affinity with O radical under all conditions, thereby both of these hydrocarbons show very fast and efficient $NO-NO_2$ oxidation. It was also shown that propylene is superior to ethylene in the aspect of NOx removal.

• Journal of the Korean Institute of Gas
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• v.22 no.1
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• pp.26-36
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• 2018

Conventional nickel-based catalyst processes used for dry reforming reactions have high activation temperatures and problems such as carbon deposition and metal sintering on the active sites of the catalyst surface. In this study, the characteristics of butane dry reforming reaction were investigated by using DBD plasma combined with catalytic process and compared with existing catalyst alone process. The physical and chemical properties of the catalysts were investigated using a surface area & pore size analyzer, XRD, SEM and TEM. Using $10%Ni/{\gamma}-Al_2O_3$ at $580^{\circ}C$, in the case of the catalyst+plasma process, the conversion of carbon dioxide and butane were improved by about 30% than catalyst alone process. When the catalyst+plasma process, the conversion of carbon dioxide and butane and the hydrogen production concentration are enhanced by the influence of various active species generated by the plasma. In addition, it was found that the particle size of the catalyst is decreased by the plasma in the reaction process, and the degree of dispersion of the catalyst is increased to improve the efficiency.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.60-63
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) and the effect of additive gases in a $Cl_2$-based inductively coupled plasma. The inert gases were argon, nitrogen, and helium. The maximum etch rates were 44.3, 39.9, and 37.9 nm/min for $Cl_2$(75%)/Ar(25%), $Cl_2$(50%)/$N_2$(50%), and $Cl_2$(75%)/He(25%) gas mixtures, 600 W radiofrequency power, 150 W bias power, and 2 Pa process pressure. We obtained the maximum etch rate by a combination of chemical reaction and physical bombardment. A volatile compound of Zn-Cl. achieved the chemical reaction on the surface of the ZnO thin films. The physical etching was performed by inert gas ion bombardment that broke the Zn-O bonds. The highly oriented (002) peak was determined on samples, and the (013) peak of $Zn_2SiO_4$ was observed in the ZnO thin film sample based on x-ray diffraction spectroscopy patterns. In addition, the sample of $Cl_2$/He chemistry showed a high full-width at half-maximum value. The root-mean-square roughness of ZnO thin films decreased to 1.33 nm from 5.88 nm at $Cl_2$(50%)/$N_2$(50%) plasma chemistry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.581-582
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• 2005

In order to apply the discharge plasma processing. to industrial areas, the control of the chemical reaction mechanism is necessary. The hybrid plasma reactor was designed for the effective treatment of wastewater and hazardous volatile organic substances. This plasma reactor was similar to the barrier discharge, and surface discharge on the dielectric surface was propagated to the water surface strongly for the heterogeneous chemical reaction at the interface between the working gas and the water surface. The discharge emission in this discharge reactor was mainly $N_2$ second positive band in the case of $N_2$ or air gas atmosphere, and intensities from OH radicals in Ar gas atmosphere were stronger than in $N_2$ or air gas atmosphere. From this result, it is necessary to apply Ar gas for the effective generation of OH radicals in this plasma reactor.