• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.59-63
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• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.7-11
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• 2001

Utility boiler operators seeking to gain the greatest economic advantage from their units are faced with three challenges, namely the obligatory light-up fuel costs, the additional expense of supplementary fuel firing should they wish to use a cheaper fuel that may be beyond the original burner manufacturer’s stability and combustion performance assurances and the immediate environmental impact of both. The novel use of plasma arc technology can provide a solution to these challenges. This paper introduces the work being undertaken through a joint collaboration between the EU, Kazahkstan and Russia in order to develop a tried and tested engineering methodology and a mathematical based application and sensitivity analysis approach for the design and optimisation stage of these plasma devices that, as a consequence, their assist in their universal introduction.

• Journal of Welding and Joining
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• v.19 no.4
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• pp.375-378
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• 2001

The new development of the surface hardening technology has been attracted to machine designer and materials scientist in the view point of improvement in the lifetime and performance of the machine. The heat-treatment process has been a well-known technology to make harden the metal surface despite of its inefficiency in productivity and its inherent environmental pollution problem. Therefore, the plasma technology has been applied to the conventional process to improve the above issues and become successful in diminishing the ecological harmfulness. However, the drastic short processing time has been sought to increase the productivity by means of new plasma technology so-called, high temperature pulsed plasma flux (HTPPF). The basic principle and features of this HTPPF will be introduced and the present status of this technology will be described in this paper.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.133-137
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• 2018

Plasma devices such as jets, pencils, and torches have been developed as new tools that help penetration of target agents and applied to plasma medicine. However, these devices cannot be used in a large area. Therefore, we introduced a flexible plasma device, which can be treated of large area and designed as bendable plasma. In additional, in vitro model based on agarose gel was prepared that can be show effectiveness in the depth of penetration. Plasma treatment conditions such as power, time and distance can be optimized on the agarose gel wound model. The chemical structure of changed polysaccharides was predicted due to reactive excited atoms and molecules, UV photons, charged particles and reactive oxygen and nitrogen species (RONS).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

• Carbon letters
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• v.12 no.1
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• pp.16-20
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• 2011

Commercial PAN fibers were thermally stabilized at 220 or $240^{\circ}C$ for 30 min. Those fibers were further stabilized using radio-frequency (RF) capacitive plasma discharge during 5 or 15 min. From Fourier transform infrared spectroscopy results, it was observed that an additional plasma treatment led to further stabilization of PAN fibers. After stabilization, carbonization was performed to investigate the final tensile properties of the fabricated carbon fibers (CFs). The results revealed that a combination of thermal and plasma treatment is a possible stabilization process for manufacturing CFs. Morphology of CFs was investigated using scanning electron microscopy. The morphology shows that the plasma stabilization performed by the RF large gap plasma discharge may damage the surface of the CF, so it is necessary to select a proper process condition to minimize the damage.

• Journal of the Korean Society of Food Science and Nutrition
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• v.40 no.1
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• pp.123-127
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• 2011

This study was conducted to decrease the microbial hazard in kimchi saline water with microwave plasma sterilization system and to evaluate the inactivation of foodborne pathogens by the microwave plasma sterilization system as a non-thermal treatment. Contamination of coliform, Escherichia coli, and yeasts and molds were detected in the used saline water, and the microbial populations increased as the saline water was reused repeatedly. The $D_{10}$-values of E. coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes by the microwave plasma sterilization system were 0.48, 0.52, and 0.45 cycle, respectively. In addition, the microbial populations of coliform, E. coli, Salmonella spp., total aerobic bacteria, and yeasts and molds in the used kimchi saline water were significantly decreased by treating the saline water using the microwave plasma sterilization system. Therefore, these results suggest that microwave plasma sterilization system can be useful in improving the microbial safety of the used saline water.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.119-126
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• 2022

MAS-based glass, which has been studied to replace the ceramic material used in the plasma etching chamber, has problems such as forming and processing due to its high melting temperature. To solve this problem, in this study, fluoride was added to the existing MAS-based glass to increase the workability in the glass manufacturing and to improve the chemical resistance to CF₄/Ar/O₂ plasma gas. Through RAMAN analysis, the structural change of the glass according to the addition of fluoride was observed. In addition, it was confirmed that high-temperature viscosity and thermal properties decreased as the fluoride content increased and plasma resistance was maintained, it showed an excellent etching rate of up to 11 times compared to quartz glass.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• Clean Technology
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• v.17 no.3
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• pp.250-258
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• 2011

Thermal plasma has been presented for the decomposition of perfluorocompounds (PFCs) which are extensively used in the semiconductor manufacturing and display industry. We developed pilot-scale equipment to investigate the large scale treatment of PFCs and called it a "thermal plasma scrubber". PFCs such as $CF_4$, $C_2F_6$, $SF_6$, and $NF_3$ used in experiments were diluted with $N_2$. There were two different types of experiment setup related to the water spray direction inside the thermal plasma scrubber. The first type was that the water was sprayed directly into the gas outlet located at the exit of the reaction section. The second type was that the water was sprayed on the wall of the quenching section. More effective decomposition took place when the water was sprayed on the quenching section wall. For $C_2F_6$, $SF_6$, and $NF_3$ the maximum destruction and removal efficiency was nearly 100%, and for $CF_4$ was up to 93%.