• International Journal of Advanced Culture Technology
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• v.4 no.2
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• pp.27-33
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• 2016

This paper proposes to increase the node energy efficiency, which rapidly drops during the transmission of L-TEEN (Layered Threshold sensitive Energy Efficient sensor Network protocol), using the method of DL-TEEN (Dual-hop Layered TEEN). By introducing dual-hop method in the data transmission, the proposed single-hop method for short-range transmission and multi-hop transmission method between the cluster heads for remote transmission was introduce. By introducing a partial multi-hop method in the data transmission, a single-hop method for short range transmission method between the cluster heads for remote transmission was introduces. In the proposed DL-TEEN, the energy consumption of cluster head for remote transmission reduces and increases the energy efficiency of sensor node by reducing the transmission distance and simplifying the transmission routine for short-range transmission. As compared the general L-TEEN, it was adapted to a wider sensor field.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.27-37
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• 2005

Direct writing technology on the silicon wafer surface is used to reduce the size of the chip as the miniature trend in electronic circuit. In order to improve the productivity and efficiency, the real time quality estimation is very important in each semiconductor process. In laser marking, marking quality is determined by readability which is dependant on the contrast of surface, the line width, and the melting depth. Many researchers have tried to find theoretical and numerical estimation models fur groove geometry. However, these models are limited to be applied to the real system. In this study, the estimation system for the line width during the laser marking was proposed by process monitoring method. The light intensity emitted by plasma which is produced when irradiating the laser to the silicon wafer was measured using the optical sensor. Because the laser marking is too fast to measure with external sensor, we build up the coaxial monitoring system. Analysis for the correlation between the acquired signals and the line width according to the change of laser power was carried out. Also, we developed the models enabling the estimation of line width of the laser marking through the statistical regression models and may see that their estimating performances were excellent.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.273.1-273.1
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• 2016

Graphene exhibits a number of unique properties that make it an intriguing candidate for use in sensor. Here, we report graphene-based gas sensor. Graphene was grown using CVD. Then, the sensor was made using standard lithography techniques. The sensor conductance increased upon exposure to NH3, whereas it decreased upon NO2, suggesting that NH3 and NO2 might be discriminated using the graphene-based sensor. To improve the sensitivity, graphene was treated with hydrogen plasma. After hydrogen treatment, the electrical properties of graphene changed from ambipolar to p-type semiconductors. In addition, the sensor performance was improved probably due to an opening of bandgap.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.126-131
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• 2007

In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1783-1788
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• 2004

In the present paper, a micro flow sensor, which can be used at bio-delivery systems and micro heat pumps, is developed. For this, the micro flow sensor is integrated on a quartz wafer ($SiO_2$) and is manufactured by simple and convenient microfabrication processes. The micro flow sensor aims for measuring mass flow rates in the low range of about $0{\sim}20$ SCCM. The micro flow sensor is composed of temperature sensors, a heater, and a flow microchannel. The temperature sensors and the heater are manufactured by the sputtering processes in this study. In the microfabrication processes, stainless steel masks with different patterns are used to deposit alumel and chromel for temperature sensors and nichrome for the heater on the quartz wafer. The microchannel is made of Polydimethylsiloxane(PDMS) easily. A deposited quartz wafer is bonded to the PDMS microchannel by using the air plasma. Finally, we confirmed the good operation of the present micro flow sensor by measuring flow rate.

• Journal of Powder Materials
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• v.19 no.5
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• pp.343-347
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• 2012

In this study, an oxygen plasma treatment was used as a low temperature debinding method to form a conductive copper feature on a flexible substrate using a direct printing process. To demonstrate this concept, conductive copper patterns were formed on polyimide films using a copper nanoparticle-based paste with polymeric binders and dispersing agents and a screen printing method. Thermal and oxygen plasma treatments were utilized to remove the polymeric vehicle before a sintering of copper nanoparticles. The effect of the debinding methods on the phase, microstructure and electrical conductivity of the screen-printed patterns was systematically investigated by FE-SEM, TGA, XRD and four-point probe analysis. The patterns formed using oxygen plasma debinding showed the well-developed microstructure and the superior electrical conductivity compared with those of using thermal debinding.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.135-137
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• 2006

To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.3
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• pp.515-520
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• 2009

In this paper, the monitoring system was developed measuring the light signal emitted from the plasma in aluminum laser welding. Spectrum of plasma was measured using a spectrometer, and the photodiode was selected based on the spectrum analysis. The sensor signals for various welding conditions could be obtained, the characteristic of signal was closely related to the intensity and stability of plasma through mean value of signal and FFT analysis. The reason of signal fluctuation was behavior of plasma and keyhole and it was also connected with the surface bead shape of weld.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.111-116
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• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• International journal of advanced smart convergence
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• v.6 no.3
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• pp.53-58
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• 2017

A WSN (Wireless Sensor Network) is a network that is composed of wireless sensor nodes. There is no restriction on the place where it can be installed because it is composed wirelessly. Instead, sensor nodes have limited energy. Therefore, to use the network for a long time, energy consumption should be minimized. Several protocols have been proposed to minimize energy consumption, and the typical protocol is the LEACH protocol. The LEACH protocol is a cluster-based protocol that minimizes energy consumption by dividing the sensor field into clusters. Depending on how you organize the clusters of sensor field, network lifetimes may increase or decrease. In this paper, we will improve the network lifetime by improving the cluster head selection method in LEACH Protocol.