• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.521-522
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• 2006

In this paper, hybrid air-water discharges were used to develop an optimal condition for providing a high level of water decomposition for hydrogen yield. Electrical and optical phenomena accompanying the discharges were investigated along with feeding gases, flow rates, and point-to-plane electrode gap distance. The primary focus of this experiment was put on the optical emission of the near UV range, with the energy threshold sufficient for water dissociation and excitation. The $OH(A^{2+},'=0\;X^2,"=0$) band's optical emission intensity indicated the presence of plasma chemical reactions involving hydrogen formation. In the gaseous atmosphere saturated with water vapor the OH(A-X) band intensity was relatively high compared to the liquid and transient phases although the optical emission strongly depended on the flow rate and type of feeding gas. In the gaseous phase discharge phenomenon for Ar carrier gas transformed into a gliding arc via the flow rate growth. OH(A-X) band's intensity increased according to the flow rate or residence time of He feeding gas. Reciprocal tendency was acquired for $N_2$ and Ar carrier gases. The peak value of OH(A-X) intensity was observed in the proximity of the water surface, however in the cases of Ar and $N_2$ with 0.5 SLM flow rate peaks shifted to the region below the water surface. Rotational temperature ($T_{rot}$) was estimated to be in the range of 900-3600 K, according to the carrier gas and flow rate, which corresponds to the arc-like-streamer discharge.

• Food Engineering Progress
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• v.14 no.3
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• pp.202-207
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• 2010

Low-pressure plasmas (LPPs) were generated with different gases such as air, oxygen and nitrogen, and their inactivation effects against Escherichia coli were compared in order to evaluate the potential as a non-thermal microbial disinfection technology. Homogeneous plasmas were generated under low pressure below 1 Torr at gas flow rate of 350 mL/min regardless the types of gases. Temperature increases by LPPs were not detrimental showing less than ${10^{\circ}C}$ and ${25^{\circ}C}$ increases after 5 and 10 min treatments, respectively. The smallest temperature increase was observed with air LPP, and followed by oxygen and nitrogen LPPs. More than 5 log reduction in E. coli was achieved by 5 min LPP treatment but the destruction effect was retarded afterward. The LPP inactivation was represented by a iphasic first order reaction kinetics. The highest inactivation rate constant was achieved in air LPP and followed by oxygen and nitrogen LPPs. The small D-values of the LPP also supported its potentialities as a non-thermal food surface disinfection technology in addition to the substantial microbial reduction of more than 5 logs.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.6 no.1
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• pp.17-23
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• 2008

In this study, plasma processing of metal surface is experimentally investigated to enhance the surface decontamination efficiency and to find out the reaction mechanism. Cobalt, the major contaminant in the nuclear facilities, and three fluorine-containing gases, $CF_4/O_2$, $SF_6/O_2$, and $NF_3$ are chosen for the investigation. Thin metallic disk specimens are prepared and their surface etching reactions with the three plasma gases are examined. Results show that the maximum etching rate of $17.2\;{\mu}m/min.$ is obtained with NF3 gas at $420^{\circ}C$, while with $CF_4/O_2$, $SF_6/O_2$ gas plasmas those of $2.56\;{\mu}m/min.$ and $1.14\;{\mu}m/min.$ are obtained, respectively. Along with etching experiments, constituent elements of the reaction products are identified to be cobalt, oxygen, and fluorine by AES (Auger Electron Spectroscopy) analysis. It turns out that the oxygen atoms are physically adsorbed ones to the surface from the ambient not participation ones during the analysis after reaction, which supports that the surface reaction of cobalt is mainly to be a fluorination reaction.

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.414-419
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• 2006

Effects of water vapor, hydrocarbons, and CO, which are inevitably included in exhaust gases of combustion, on a combined $De-NO_{x}$ process of non-thermal plasma and $NH_{3}$ SCR (Selective Catalytic Reduction) have been investigated. Test results showed that fast SCR reaction enhanced $De-NO_{x}$ rate under the low temperature conditions, $150{\sim}200^{\circ}C$ The present test, however, showed that the role of the fast SCR reaction can be significantly suppressed by addition of hydrocarbons in a non-thermal plasma reactor. Detailed investigation verified that such suppressed role of the fast SCR reaction could be caused by the $NO_{2}/NO_{x}$ ratio modified by aldehydes produced from hydrocarbons in a non-thermal plasma reactor. In addition, the present study was confirmed that the effects of water vapor and CO were not noticeable compared with the hydrocarbon effects.

• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.86-92
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• 2011

The diagnosis studies of the process of chemical vapor deposition were carried out by using in-situ particle monitor (ISPM) and self-plasma optical emission spectroscopy (SPOES). We used the two kinds of equipments such as the silicon plasma enhanced chemical vapor deposition system with silane gas and the borophosphosilicate glass depositon system for monitoring. Using two sensors, we tried to verify the diagnostic and in-situ sensing ability of by-product gases and contaminant particles at the deposition and cleaning steps. The processes were controlled as a function of precess temperature, operating pressure, plasma power, etc. and two sensors were installed at the exhaust line and contiguous with each other. the correlation of data (by-product species and particles) measured by sensors were also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.178-181
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• 2003

In this work, we etched PZT films with various additive gases ($O_2$ and Ar) in $Cl_2/CF_4$ plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in $O_2$ or Ar added $Cl_2/CF_4$ were compared, the value of remanent polarization in $O_2$ added $Cl_2/CF_4$ plasma is higher than that in Ar. added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added $Cl_2/CF_4$ gas having mixing ratio of 8/2 and 110 nm/min for 10% $O_2$ added to that same gas mixture. In order to recover the ferroelectic properties of the PZT thin films after etching, we annealed the etched PZT thin films at $550^{\circ}C$ in an $O_2$ atmosphere for 10 min. From the hysteresis curves, leakage current, retention property and switching polarization, the reduction of the etching damage and the recovery via the annealing was turned out to be more effective when $O_2$ was added to $Cl_2/CF_4$ than Ar. X-ray diffraction (XRD) showed that the structural damage was lower when $O_2$ was added to $Cl_2/CF_4$. And the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.291-297
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• 1999

The plasma etching of tungsten thin films has been studied with $SF_6$ gas in RIE system. The etch rate of ${\alpha}$-phase W film with $SF_6$ gas plasma has been showed to depend strongly on process parameters ($SF_6$, $SF_6-N_2$ gas). Effect of $N_2$ addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after $SF_6-N_2$ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.

• Membrane Journal
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• v.13 no.2
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• pp.73-80
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• 2003

Abstract: The surfaces of poly (methylpentene)(PMP) were modified by Af and $NH_3$ plasma treatment, and their effects on permeation characteristics were investigated. The mole ratio of O/C in the surface was increased with Ar plasma treatment and consequently the surface became hydrophilic because of the possible formation of -OH, -COOH and C=O. The surface treated by $NH_3$ plasma also became hydrophilic due to the formation of amine and/or amide groups. The $CO_2$ permeability and its actual selectivity over N_2$ were 182 baller and 6.17 for the optimum condition of Ar-30W-6min, while 144 Baller and 6.13 for that of $NH_3$-30 W-8 min.