• 제목/요약/키워드: Plasma Etching

검색결과 1,033건 처리시간 0.025초

Remote 플라즈마에서 위치 및 반응기체에 따른 PMMA의 식각 특성 분석 (Influence of Loading Position and Reaction Gas on Etching Characteristics of PMMA in a Remote Plasma System)

  • 고천광;이원규
    • Korean Chemical Engineering Research
    • /
    • 제44권5호
    • /
    • pp.483-488
    • /
    • 2006
  • 유기고분자에 대한 건식 식각공정으로 remote 플라즈마를 이용하여 유리 표면에 도포된 PMMA의 식각공정에 관한 연구로 플라즈마 출력, 반응가스, 플라즈마 발생원과의 거리에 대한 식각특성을 측정하였다. 플라즈마 발생원으로부터 멀어질수록 플라즈마에 의해 발생된 라디칼 밀도로 인해 PMMA 식각속도가 감소하였다. 플라즈마 내에서 발생된 라디칼에 의해 PMMA가 제거되며, 플라즈마 출력이 증가할수록 PMMA 표면과 반응하는 라디칼 증가로 식각속도는 선형적으로 증가하였다. 식각 기체에서 산소의 양이 증가함에 따라 식각속도 증가와 더불어 식각표면의 거칠기도 증가함을 알 수 있었다.

플라즈마 식각방법에 의한 단결정 실리콘의 Two-Step 식각특성 (Two-Step Etching Characteristics of Single-Si by the Plasma Etching Techique)

  • 이진희;박성호;김말문;박신종
    • 대한전자공학회논문지
    • /
    • 제24권1호
    • /
    • pp.91-96
    • /
    • 1987
  • Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

  • PDF

Inductively Coupled Plasma Reactive Ion Etching of MgO Thin Films Using a $CH_4$/Ar Plasma

  • Lee, Hwa-Won;Kim, Eun-Ho;Lee, Tae-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
    • /
    • pp.77-77
    • /
    • 2011
  • These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

  • PDF

평판형 유도 결합 플라즈마틀 이용한 GaN 건식 식각 특성 (GaN Dry Etching Characteristics using a planar Inductively coupled plasma)

  • 김문영;김태현;장상훈;태흥식
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
    • /
    • pp.276-278
    • /
    • 1997
  • The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

  • PDF

A study of the NF3 plasma etching reaction with cobalt oxide films grown on an inorganic compounds

  • Jae-Yong Lee;Kyung-Min Kim;Min-Seung Ko;Yong-Soo Kim
    • Nuclear Engineering and Technology
    • /
    • 제54권12호
    • /
    • pp.4449-4459
    • /
    • 2022
  • In this study, an NF3 plasma etching reaction with a cobalt oxide (Co3O4) films grown on the surface of inorganic compounds using granite was investigated. Experimental results showed that the etching rate can be up to 1.604 mm/min at 380 ℃ under 150 W of RF power. EDS and XPS analysis showed that main reaction product is CoF2, which is generated by fluorination in NF3 plasma. The etching rate of cobalt oxide films grown on inorganic compounds in this study was affected by surface roughness and etch selectivity. This study demonstrates that the plasma surface decontamination can effectively and efficiently remove contaminated nuclides such as cobalt attached to aggregate in concrete generated when decommissioning of nuclear power plants.

저온 플라즈마 및 Sputter Etching 처리에 의한 염색직물의 심색화 가공 (Bathochromic Finish of Dyed Fabrics by Low-Temperature Plasma and Sputter Etching Treatment)

  • Pak, Pyong Ki;Lee, Mun Cheul;Park, Geon Yong
    • 한국염색가공학회지
    • /
    • 제8권2호
    • /
    • pp.56-63
    • /
    • 1996
  • Low-temperature plasma treatment or sputter etching is of interest as one of the techniques to modify polymer surface. In this study, poly(ethylene terephthalate)(PET), nylon 6 and cotton fabrics dyed three black dyes were subjected to low-temperature argon plasma and also sputter etching. In relation to bathochromic effect, the surface characteristics of the treated fabrics and films were investigated by means of critical surface tension, SEM and ESCA measurement. The depth of shade of fabrics more increased by the sputter etching technique than argon plasma treatment. Many microcraters on the fiber surface formed by the sputter etching resulted in increase of surface area of the fiber and wettability, but the hydrophobic group was increased by the results of ESCA analysis. In particular the change in reflective index of the fibers was much more effective than the chemical composition of the fiber surface on increasing of the depth of shade.

  • PDF

부틸아세트산 메틸 이성체에 의한 산화아연(ZnO)의 식각 (Etching of Zinc Oxide(ZnO) Using Isomer of Butyl Acetate)

  • 이봉주;정헌상;이경섭
    • 대한전기학회논문지:전기물성ㆍ응용부문C
    • /
    • 제51권3호
    • /
    • pp.111-114
    • /
    • 2002
  • Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

  • Lee, Joon-Hoi;Lee, Wook-Jae;Choi, Man-Sub;Yi, Joon-Sin
    • Journal of Information Display
    • /
    • 제2권4호
    • /
    • pp.1-7
    • /
    • 2001
  • This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

  • PDF

Carbon 계 유기막질 Plasma Etching에 있어 COS (Carbonyl Sulfide) Gas 특성에 관한 연구

  • 김종규;민경석;김찬규;남석우;강호규;염근영
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
    • /
    • pp.460-460
    • /
    • 2012
  • 반도체 Device가 Shrink 함에 따라 Pattern Size가 작아지게 되고, 이로 인해 Photo Resist 물질 자체만으로는 원하는 Patterning 물질들을 Plasma Etching 하기가 어려워지고 있다. 이로 인해 Photoresist를 대체할 Hard Mask 개념이 도입되었으며, 이 Hardmask Layer 중 Amorphous Carbon Layer 가 가장 널리 사용되고 지고 있다. 이 Amorphous Carbon 계열의 Hardmask를 Etching 하기 위해서 기본적으로 O2 Plasma가 사용되는데, 이 O2 Plasma 내의 Oxygen Species들이 가지는 등 방성 Diffusion 특성으로 인해, 원하고자 하는 미세 Pattern의 Vertical Profile을 얻는데 많은 어려움이 있어왔다. 이를 Control 하기 인해 O2 Plasma Parameter들의 변화 및 Source/Bias Power 등의 변수가 연구되어 왔으며, 이와 다른 접근으로, N2 및 CO, CO2, SO2 등의 여러 Additive Gas 들의 첨가를 통해 미세 Pattern의 Profile을 개선하고, Plasma Etching 특성을 개선하는 연구가 같이 진행되어져 왔다. 본 논문에서 VLSI Device의 Masking Layer로 사용되는, Carbon 계 유기 층의 Plasma 식각 특성에 대한 연구를 진행하였다. Plasma Etchant로 사용되는 O2 Plasma에 새로운 첨가제 가스인 카르보닐 황화물 (COS) Gas를 추가하였을 시 나타나는 Plasma 내의 변화를 Plasma Parameter 및 IR 및 XPS, OES 분석을 통하여 규명하고, 이로 인한 Etch Rate 및 Plasma Potential에 대해 비교 분석하였다. COS Gas를 정량적으로 추가할 시, Plasma의 변화 및 이로 인해 얻어지는 Pattern에서의 Etchant Species들의 변화를 통해 Profile의 변화를 Mechanism 적으로 규명할 수 있었으며, 이로 인해 기존의 O2 Plasma를 통해 얻어진 Vertical Profile 대비, COS Additive Gas를 추가하였을 경우, Pattern Profile 변화가 개선됨을 최종적으로 확인 할 수 있었다.

  • PDF