• 제어로봇시스템학회:학술대회논문집
• /
• 2001.10a
• /
• pp.157.1-157
• /
• 2001

A new methodology is presented to diagnose faults in equipment plasma. This is accomplished by using neural networks as a pattern recognizer of radio frequency(rf) impedance match data. Using a realtime match monitor system, the match data were collected. The monitor system consisted mainly of a multifunction board and a signal flow diagram coded by Visual Designer. Plasma anomaly was effectively represented by electrical match positions. Twenty sets of fault-symptom patterns were experimentally simulated with experimental variations in process factors, which include rf source power, pressure, Ar and O$_2$ flow rates. As the inputs to neural networks, two means and standard deviations of positions were used ...

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.10a
• /
• pp.161-162
• /
• 2009

• Journal of the Korean Society of Visualization
• /
• v.19 no.3
• /
• pp.123-129
• /
• 2021

Many plants and animals in nature have superhydrophobic surfaces. This superhydrophobic surface has various properties such as self-cleaning, moisture collection, and anti-icing. In this study, the superhydrophobic properties of PTFE surface were treated by plasma etching. There were four important factors that changed the surface properties. Micro-sized protrusions were formed by plasma etching. The most influential parameter was RF Power. The contact angle of the pristine PTFE surface was about 113.8°. The maximum contact angle of the surface after plasma treatment with optimized parameters was about 168.1°. In this case, the sliding angle was quite small about 1°. These properties made it possible to remove droplets easily from the surface. To verify the self-cleaning effect of the surface, graphite was used to contaminate the surface and remove it with water droplets. Graphite particles were easily removed from the optimized surface compared to the pristine surface. As a result, a surface having water repellency and self-cleaning effects could be produced with optimized plasma etching parameters.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 1999.11a
• /
• pp.46-52
• /
• 1999

Laser diagnostics have been extensively used to understand plasma behaiviour under different discharge conditions. Measurements were performance for (i) electric field, (ii) electron temperature and density, and (iii) reaction products due to chemical reactions by electron impacts. The knowledge thus gained has been extensively used to realize novel plasma performances, such as epitaxial thin film depositions using plasma sputtering, performance improvements of discharge-pumped excimer laser, and developments of environmental equipment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.1
• /
• pp.94-100
• /
• 2024

Recently, as interest in personal hygiene has increased due to the community spread of COVID-19 and variant viruses, fixed and potable UV germicidal equipment to sterilize indoor spaces and hand-held UV germicidal equipment to sterilize household items such as masks and mobile phones are continuously being developed and sold. However, the development and sales of the product are difficult because appropriate testing methods have not yet been established. In this situation, if an uncertified product is distributed in the market, it can cause serious harm to consumers. In this study, we investigate the photobiological risks and safety devices against UV exposure of UV germicidal equipment distributed domestically, and propose appropriate test methods for portable UV germicidal equipment based on the research results.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.05a
• /
• pp.139-145
• /
• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.2074-2076
• /
• 2000

In this paper, RFICP equipment is designed and manufactured with the aid of high frequency discharge to produce uniform plasma with high density and large diameter. And $SF_6$ gas is used to investigate plasma characteristics. The electron density and temperature, potential dependence of $SF_6$ plasma in accordance with its operating pressure, gas flux and input power are measured by the method of Langmuir probe. The etching characteristics of the plasma is researched in accordance with operating pressure, gas flux, input power to apply to Silicon Wafer which is used in the field of semiconductor process. The proposed RFICP equipment, in this paper, has relatively excellent etching characteristics, and is thought to be element of oxidization-sheath etching facility in semiconductor manufacturing process.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1844-1845
• /
• 2007

A CUSUM control chart was used to monitor semiconductor plasma equipment. The performance of plasma monitoring was evaluated with various combinations of design variables involved in CUCUM control chart. Experimental data collected by using a real-time matching monitoring system include electrical positions of impedance and phase positions, and reflected power. The evaluation revealed that by determining specific design variables plasma states could be more strictly monitored.

• Design & Manufacturing
• /
• v.13 no.1
• /
• pp.13-18
• /
• 2019

The size and prospects of the domestic semiconductor equipment market are increasing every year. In the case of various parts used inside semiconductor equipments, high durability such as high strength and abrasion resistance is demanded. Particularly, the gases used in semiconductor production processes are toxic. In order to prevent such toxic gas leakage, a precision processing technique and a surface treatment technique for preventing corrosion are required. Electro-polishing is an electro-chemical method of polishing a metal surface to make it smooth and polished. Electro-polishing is mainly used in the finishing process of metal surface. Unlike mechanical polishing, electro-polishing is used in many fields, such as fine chemical etching equipment, since no damaged layer or burr, fine polishing groove and particles are generated. However, in order to withstand the gas used in the semiconductor equipment, the parts must have high corrosion resistance. However, the surface hardness generally become lowered through electro-polishing. Therefore, in this study, surface hardness were experimentally observed before and after electro-polishing. Then, a method of improving hardness by preparing a nitrided layer by plasma ion nitriding treatment.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.2 s.11
• /
• pp.39-43
• /
• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.