• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.188-188
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• 2000

DLC (Diamond-Like Carbon) 박막은 높은 경도와 가시광선 및 적외선 영역에서의 광 투과도, 전기적 절연성, 화학적 안정성 및 저마찰.내마모 특성 등의 우수한 물리.화학적인 물성을 갖고 있기 때문에 여러 분야의 응용연구가 이루어지고 있다. 이러한 DLC 박막을 제작하는 과정에는 여러 가지가 있으나, 본 연구에서는 ECR-PECVD electron cyclotron resonance plasma enhanced chemical vapor deposition) 방법을 사용하였다. 이것은 최근에 많이 이용되고 있는 방법으로, 이온화률이 높을뿐만 아니라 상온에서도 성막이 가능하고 넓은 진공도 영역에서 플라즈마 공정이 가능한 장점이 있다. 기판으로는 4" 크기의 S(100)를 사용하였고, 박막을 제작하기 전에 진공 중에서 플라즈마 전처리를 하였다. 플라즈마 전처리는 Ar 가스를 150SCCM 주입시켜 5$\times$10-1 torr 의 진공도를 유지시키면서, ECR power를 700W로 고정하고, 기판 bias 전압을 -300 V로 하여 5분 동안 기판을 청정하였다. DLC 박막은 ECR power를 700W. 가스혼합비와 유량을 CH4/H2 : 10/100 SCCM, 증착시간을 2시간으로 고정하고, 기판 bias 전압을 0, -50, -75, -100, -150, -200V로 변화시켜가면서 제작하였다. 이때 ECR 소스로부터 기판까지의 거리는 150mm로 하였고, 진공도는 2$\times$10-2torr 였으며, 기판 bias 전압은 기판에 13.56 MHz의 RF power를 연결하여 RF power에 의해서 유도되는 negative DC self bias 전압을 이용하였다. 제작된 박막을 Auger electron spectroscopy, elastic recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.31-37
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• 2013

Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1155-1159
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• 1999

Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.42-49
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• 2011

We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.291-297
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• 2007

The field emission properties of CNT-emitters coated with Ag-Cu alloy have been investigated. The vertical aligned multi-walled CNTs were synthesized by dc-plasma enhanced chemical vapor deposition (dc-PECVD) and the Ag-Cu alloy was coated by using dc-magnetron sputter. The morphology of alloy-coated and un-coated CNT-emitters was observed by using SEM and their field emission properties were also measured. Annealing the AgCu-coated CNTs at temperature more than ${\sim}700^{\circ}C$, the Ag-Cu alloy was diffused to and aggregated on the top of the CNT as a Q-tip. A significant progress on the field emission was not observed with coating Ag-Cu alloy on the CNTs, but a certain improvement in a resistance against oxygen gas was made confirmation. It seems to be due to inertness of Ag-Cu alloy on the CNTs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.11
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• pp.2075-2082
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• 2006

This paper presents modeling and optimization techniques for hish efficiency solar cell process on single-crystalline float zone (FZ) wafers. Among a sequence of multiple steps of fabrication, the followings are the most sensitive steps for the contact formation: 1) Emitter formation by diffusion; 2) Anti-reflection-coating (ARC) with silicon nitride using plasma-enhanced chemical vapor deposition (PECVD); 3) Screen-printing for front and back metalization; and 4) Contact formation by firing. In order to increase the performance of solar cells in terms of efficiency, the contact formation process is modeled and optimized using neural networks and genetic algorithms, respectively. This paper utilizes the design of experiments (DOE) in contact formation to reduce process time and fabrication costs. The experiments were designed by using central composite design which consists of 24 factorial design augmented by 8 axial points with three center points. After contact formation process, the efficiency of the fabricated solar cell is modeled using neural networks. Established efficiency model is then used for the analysis of the process characteristics and process optimization for more efficient solar cell fabrication.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.