• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.74-74
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• 2000

낮은 유전상수(k$\leq$3)와 높은 열적안정성(>4$25^{\circ}C$)은 초고집적회로(ULSI)기술에서 RC 지연을 해결하기 위한 금속배선의 중간 절연층으로서의 2개의 가장 중요한 특성이다. 본 연구에서는 cyclohezane을 precursor로 사용하여 plasma enhanced chemical vapor deposition(PECVD)방법으로 유기박막을 성장시켰으며 낮은 유전상수와 높은 열적안정성을 동시에 확보하기 위하여 열적안정성은 좋지 않지만 유전상수가 낮은 박막(soft layer)위에 유전상수는 다소 높지만 열적안정성이 좋은 박막(hard layer)을 얇게 증착하여 hard layer/soft layer의 2층 구조를 형성하여서 구조적, 전기적 특성을 조사하였다. 유기박막은 5$0^{\circ}C$로 유지된 reactor 내부에서 argon(Ar) plasma에 의해 증착되었으며 platinum(Pt)기판과 silicon 기판위에 동시에 증착하였다. Pt 기판위에 증착한 시편으로 유전상수, I-V 등 전기적 특성을 측정하였고, silicon 기판위에 증착한 시편으로 열적안정성과 구조적 특성등을 분석하였다. 증착압력 0.2Torr에서 plasma power를 5W에서90W로 증가할 때 유전상수는 2.36에서 3.39로 증가하였으며 열적안정성은 90W에서 180W로 증가하였을 때 유전상수는 2.42에서 2.79로 증가하엿고 열적안정성은 모두30$0^{\circ}C$이하였다. 단일층 구조에서는 유전상수가 낮은 박막은 열적으로 불안정하고 열적 안정성이 좋은 박막은 유전상수가 다소 높은 문제가 나타났다. 이런 문제를 해결하기 위하여 2 Torr, 120W에서 증착한 유전상수가 2.55이고 열적으로 불안정한 박막을 soft layer로 5150 증착하고 그 위에 0.2Torr, 90W에서 증착한 유전상수가 3.39이고 열적으로 45$0^{\circ}C$까지 안정한 박막을 hard layer로 360 , 720 , 1440 증착하였다. 증착된 2층구조 박막의 유전상수는 각각 2.62, 2.68, 2.79이었으며 열적안정성 측정에서는 40$0^{\circ}C$까지 두께 감소가 보이지 않았다. 그러나 SEM 측정에서 열처리 후 표면이 거칠어지는 현상이 발견되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.305-305
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• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.23-23
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• 2011

Chemical-Mechanical Planarization (CMP) 공정이란 화학적 반응 및 기계적인 힘이 복합적으로 작용하여 표면을 평탄화하는 공정이다. 이러한 CMP 공정은 반도체 산업에서 회로의 고집적화와 다층구조를 형성하기 위하여 도입되었으며 반도체 제조를 위한 필수공정으로 그 중요성이 강조되고 있다. 특히 최근에는 Inter-Level Dielectric (ILD)의 형성과 Shallow Trench Isolation (STI) 공정에서실리콘 산화막을 평탄화하기 위한 CMP 공정에 대해 연구가 활발히 이루어지고 있다. 그러나 CMP 공정 후 scratch, pitting corrosion, contamination 등의 Defect가 발생하는 문제점이 존재한다. 이 중에서도 scratch는 기계적, 열적 스트레스에 의해 생성된 패드의 잔해, 슬러리의 잔유물, 응집된 입자 등에 의해 표면에 형성된다. 반도체 공정에서는 다양한 종류의 실리콘 산화막이 사용되고 gks이러한 실리콘 산화막들은 종류에 따라 경도가 다르다. 따라서 실리콘 산화막의 경도에 따른 CMP 공정 및 이로 인한 Scratch 발생에 관한 연구가 필요하다고 할 수 있다. 본 연구에서는 scratch 형성의 거동을 알아보기 위하여 boronphoshposilicate glass (BPSG), plasma enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS), high density plasma (HDP) oxide의 3가지 실리콘 산화막의 기계적 성질 및 이에 따른 CMP 공정에 대한 평가를 실시하였다. CMP 공정 후 효율적인 scratch 평가를 위해 브러시를 이용하여 1차 세정을 실시하였으며 습식세정방법(SC-1, DHF)으로 마무리 하였다. Scratch 개수는 Particle counter (Surfscan6200, KLA Tencor, USA)로 측정하였고, 광학현미경을 이용하여 형태를 관찰하였다. Scratch 평가를 위한 CMP 공정은 실험에 사용된 3가지 종류의 실리콘 산화막들의 경도가 서로 다르기 때문에 동등한 실험조건 설정을 위해 동일한 연마량이 관찰되는 조건에서 실시하였다. 실험결과 scratch 종류는 그 형태에 따라 chatter/line/rolling type의 3가지로 분류되었다 BPSG가 다른 종류의 실리콘 산화막에 비해 많은 수에 scratch가 관찰되었으며 line type이 많은 비율을 차지한다는 것을 확인하였다. 또한 CMP 공정에서 압력이 증가함에 따라 chatter type scratch의 길이는 짧아지고 폭이 넓어지는 것을 확인하였다. 본 연구를 통해 실리콘 산화막의 경도에 따른 scratch 형성 원리를 파악하였다.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Journal of Satellite, Information and Communications
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• v.6 no.1
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• pp.28-31
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• 2011

In this paper, a new set of structural and sacrificial material that is diamond like carbon (DLC)/photoresist for high performance piezoelectric RF-MEMS switches which are actuated in d33 mode is suggested. To avoid curing problem of photoresist sacrificial layer, DLC structure layer is deposited at room temperature by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. And lead zirconate titanate (PZT) piezoelectric layer is deposited on structure layer directly at room temperature by rf magnetron sputtering system and crystallized by rapid thermal annealing (RTA) equipment. Particular attention is paid to the annealing of PZT film in order to crystallize into perovskite and the variation of mechanical properties of DLC layer as a function of annealing temperature. The DLC layer shows good performance for structure layer in aspect to Young's modulus and hardness. The fabrication becomes much simpler and cheaper with use of a photoresist.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.215-219
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• 2008

The bonding structure and composition of silicon nitride (SiNx) films were investigated by using Fourier transform infrared spectroscopy (FT-IR). SiNx films were deposited on Si substrate at $340^{\circ}C$ using a conventional PECVD system. The compositions of Si and N in SiNx films were confirmed by using Rutherford backscattering spectroscopy (RBS) and photoluminescence (PL) analysis. The surface morphology of SiNx films was also analyzed by using atomic force microscopy (AFM). It was found that the contents of NH(at. %) is the reverse related with those of SiH corresponding to the result of FT-IR. we conclude that a quantitative analysis on SiNx films can be possible through a precise detection of the contents of H in SiNx films with a FT-IR analysis only.

• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.3
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• pp.215-222
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• 2001

Neural network based models of semiconductor manufacturing processes have been shown to offer advantages in both accuracy and generalization over traditional methods. However, model development is often complicated by the fact that back-propagation neural networks contain several adjustable parameters whose optimal values unknown during training. These include learning rate, momentum, training tolerance, and the number of hidden layer neurOnS. This paper presents an investigation of the use of genetic algorithms (GAs) to determine the optimal neural network parameters for the modeling of plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films. To find an optimal parameter set for the neural network PECVD models, a performance index was defined and used in the GA objective function. This index was designed to account for network prediction error as well as training error, with a higher emphasis on reducing prediction error. The results of the genetic search were compared with the results of a similar search using the simplex algorithm.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.4
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• pp.187-193
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• 2018

In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.